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Details, datasheet, quote on part number:ZTX749_D27Z
 
 
Part:ZTX749_D27Z
Category:Discrete => Transistors => Bipolar => General Purpose => PNP
Description:PNP Low Saturation Transistor
Company:Fairchild Semiconductor
Datasheet:Download ZTX749_D27Z datasheet   File size : 42 kB
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Datasheet text preview:
ZTX749
ZTX749
PNP Low Saturation Transistor
· This device are designed with high current gain and low saturation voltage with collector currents up to 2A continuous.
C BE
T O -226
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value -25 -35 -5 -2 -55 ~ +150 Units V V V A °C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics TA=25°C unless otherwise noted
S ymb o l Off Characteristics BVCEO BVCBO BVEBO ICBO IEBO hFE Parameter Test Condition IC = -10mA IC = -100µA IE = -100µA VCB = -30V VCB = -30V, TA = 100°C VEB = -4V IC = -50mA, VCE = -2V IC = -1A, VCE = -2V IC = -2A, VCE = -2V IC = -6A, VCE = -2V IC = -1A, IB = -100mA IC = -2A, IB = -200mA IC = -1A, IB = -100mA IC = -1A, VCE = -2V VCB = -10V, IE = 0, f = 1MHz IC = 1-00mA, VCE = -5V f = 100MHz 100 70 100 75 15 Min. -2 5 -3 5 -5 -100 -10 -1 0 0 Max. Units V V V nA µA nA Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain
On Characteristics* 300
VCE(sat) VBE(sat) VBE(on) Cobo fT
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance Transition Frequency
-300 -500 -1 . 2 5 -1 100
mV V V
PF
Small-Signal Characteristics
* Pulse Test: Pulse Width 300µs, Duty Cycle 2%
Thermal Characteristics TA=25°C unless otherwise noted
Symbol PD RJA Parameter Total Device Dissipation Thermal Resistance, Junction to Ambient Max. 1 125 Units W °C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, August 2003
ZTX749
Package Dimensions
TO-226
S4.70- 4.32; S1.52- 1.02;
2" TYP
S7.87- 7.37;
S7.73- 7.10;
S1.65- 1.27;
2" TYP
0.51
S0.760.36;
S15.61-14.47;
S0.51- 0.36;
S0.48- 0.30;
S1.40- .14; 1
S1.40- 1.14;
PIN
99 E B C
95 E C B
S4.45- 3.81; 1 5" TYP 2 3
1
2
3
TO-226AE (95,99)
S2.41- 2.13;
For leadformed option ordering, refer to Tape & Reel data information.
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation Rev. A, August 2003
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM FACTTM ActiveArrayTM FACT Quiet SeriesTM BottomlessTM FAST® FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER
ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC® OPTOPLANARTM
PACMANTM POPTM Power247TM PowerTrench® QFET® QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER® SMART STARTTM
SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic® TruTranslationTM UHCTM UltraFET® VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve d esign. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
P re l i m i n a r y
No Identification Needed
Full Production
Obsolete
Not In Production
©2003 Fairchild Semiconductor Corporation
Rev. I3