Details, datasheet, quote on part number: KBP200
CategoryDiscrete => Diodes & Rectifiers => General Purpose Diodes
DescriptionDiscrete, Diodes, Bridges
CompanyFCI Semiconductor
DatasheetDownload KBP200 datasheet
Find where to buy


Features, Applications

3 places.083 typ Mechanical Data: Mounting Position - Any. Weight 0.3 Ounces.215 typ.

Electrical Characteristics @ 25oC. Maximum Ratings Peak Repetitive Reverse Voltage...VRRM RMS Reverse Voltage...VR(rms) DC Blocking Voltage...VDC Average Forward Rectified Current...IF(av) = 25°C Non-Repetitive Peak Forward Surge Current...IFSM 8.3 mS Single ½ Sine Wave Imposed on Rated Load Forward Voltage...VF Bridge Element @ 2.0 Amps DC Reverse Current...IR @ Rated DC Blocking Voltage

Ratings at 25 Deg. C ambient temperature unless otherwise specified. Single Phase Half Wave, 60 HZ Resistive or Inductive Load. For Capacitive Load, Derate Current by 20%.


Related products with the same datasheet
Some Part number from the same manufacture FCI Semiconductor
KBP200...210Series Discrete, Diodes, Bridges
KSD1616/1616A Discrete, Transistors, Power Transitors
LM3173 Regulators, Linear Voltage Regulators
LM339 Amplifiers, General
LM7800Series3 Regulators, Linear Voltage Regulators
LM78L00 Regulators, Positive Voltage Regulators
LM7900Series3 Regulators, Linear Voltage Regulators
LM79L00 Regulators, Positive Voltage Regulators
LP2950/LP2951 Regulators, Low Dropout Regulators
MC34063CD/S Power Supply

GP08A....08JSERIES : Discrete, Rectifiers, Mega Rectifiers

GP10B : Discrete, Rectifiers, Mega Rectifiers

KBU800...810SERIES : Discrete, Diodes, Bridges

SMBJ8.5A : Discrete, Diodes, Standard, Surface Mount

FBR4040 : 40 Amp Schottky Barrier Rectifiers

P6KE-16A : 6.8V to 200V GPP Transient Voltage Suppressors

EGFZ30B : 3.0 Amp Glass Passivated Sintered Fast Efficient Rectifiers Mechanical Dimensions

GUF20J : 2.0 Amp Ultrafast Switching Megarectifiers

Same catergory

2N6315 : IC(A) = 7, VCBO(V) = 60, VCEO(V) = 60, PD(W) = 90, Package = TO-66, HFE(Min/Max) = 20/100, IC/VCE(A/V) = 2.5/4.0, VCE(SAT)(V) = 2.0, ic / IB(A/mA) = 7/1750.

2SK2541 : N-channel MOS Field Effect Transistor For High Speed Switching.

2SK3261 : . N- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE and Applications Low ON-state resistance. Low Qg. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current(Pulse) Allowable power Dissipation Channel Temperature Storage Temperature unit VDSS VGSS ID* IDP PD Tch Tstg to ±150.

MRF5811LT1 : Low Noise High-frequency Transistor NPN Silicon. Designed for high current, low power amplifiers to 1.0 GHz. Low Noise @ 500 MHz) Low Intermodulation Distortion High Gain State­of­the­Art Technology Fine Line Geometry Arsenic Emitters Gold Top Metallization Nichrome Thin­Film Ballasting Resistors Excellent Dynamic Range Fully Characterized High Current­Gain Bandwidth Product Available in Tape and Reel.

MSAFA1N100 : Enhancement N-Channel. 1 Amp 1000 V N-channel Enhancement Mode High Density.

NTE18 : NTE18 (NPN) & NTE19 (PNP), Silicon Complementary Transistors High Voltage, High Current Capacity Driver.

STB30NF10 : Low Voltage. N-channel 100V 0.038 Ohm 35A TO-220/TO-220FP/D2PAK Low Gate Charge StripFET Power ii MOSFET.

PMBT3904M : PMBT3904M - 40 V, 200 MA NPN Switching Transistor NPN single switching transistor in a SOT883 (SC-101) leadless ultra small Surface-Mounted Device (SMD) plastic package. PNP complement: PMBT3906M..

000-5368-30R-LF1 : DATACOM TRANSFORMER FOR GENERAL PURPOSE APPLICATION(S). s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER ; Mounting: Chip Transformer ; Operating Temperature: -20 to 85 C (-4 to 185 F) ; Standards: RoHS.

050025R1CCZB : CAPACITOR, CERAMIC, MULTILAYER, 200 V, BP, 0.0000051 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; Capacitance Range: 5.10E-6 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 200 volts ; Temperature Coefficient: 30 ppm/Ā°C ; Mounting Style: Surface Mount Technology.

FCA63K9J : RESISTOR, WIRE WOUND, 5 W, 5 %, 20 ppm, 3900 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: Wirewound ; Mounting / Packaging: ThroughHole, Radial Leads, RADIAL LEADED, ROHS COMPLIANT ; Resistance Range: 3900 ohms ; Tolerance: 5 +/- % ; Temperature Coefficient: 20 Ā±ppm/Ā°C ; Power Rating: 5 watts (0.0067.

KSE2955TJ69Z : 10000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-220. s: Polarity: PNP ; Package Type: TO-220, TO-220, 3 PIN.

MMSZ11ET3G : VOLTAGE REGULATOR DIODE. s: Diode Type: VOLTAGE REGULATOR DIODE. Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD-123 package. These devices provide a convenient alternative to the leadless 34-package style. 500 mW Rating or FR-5 Board Wide Zener Reverse Voltage Range 56 V Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications.

T-1289 : TELECOM TRANSFORMER. s: Category: Signal ; Other Transformer Types / Applications: Telecom ; Mounting: Chip Transformer.

VJ0603Q220HXBPW1BC : CAPACITOR, CERAMIC, MULTILAYER, 100 V, C0G, 0.000022 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 2.20E-5 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 100 volts ; Temperature Coefficient: 30 ppm/Ā°C ; Mounting Style:.

226AFB020M : CAPACITOR, ALUMINUM ELECTROLYTIC, SOLID POLYMER, POLARIZED, 20 V, 22 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 22 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 20 volts ; Leakage Current: 220 microamps ; ESR: 60 milliohms ; Mounting Style: Through Hole ; Operating.

232220513 : RESISTOR, FUSIBLE, FILM, 0.33 W, 5 %, 100; 200 ppm, 0.22 ohm - 15000 ohm, THROUGH HOLE MOUNT. s: Category / Application: Fusible Resistor, General Use ; Technology / Construction: MetalAlloy ; Mounting / Packaging: ThroughHole, Axial Leads, AXIAL LEADED, ROHS COMPLIANT ; Operating Temperature: -55 to 155 C (-67 to 311 F).

2330LFM0812RKN0250 : CAP,AL2O3,33UF,50VDC,20% -TOL,20% +TOL. s: Applications: General Purpose ; Electrolytic Capacitors: Aluminum Electrolytic.

2N5306L34Z : 1200 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92. s: Polarity: NPN.

50TWLR47M : CAP,AL2O3,47UF,50VDC,20% -TOL,20% +TOL. s: Applications: General Purpose ; Electrolytic Capacitors: Aluminum Electrolytic.

0-C     D-L     M-R     S-Z