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Details, datasheet, quote on part number:FP100
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Datasheet text preview:
PRELIMINARY DATA SHEET
FP100
HIGH PERFORMANCE PHEMT
· FEATURES 14 dBm P-1dB at 12 GHz 9 dB Power Gain at 12 GHz 3.0 dB Noise Figure at 12 GHz
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DESCRIPTION AND APPLICATIONS
DIE SIZE: 16.5 x 16.5 mils (420 x 420 µm) DIE THICKNESS: 3.9 mils (100 µm typ.) BONDING PADS: 3.3 x 3.5 mils (85 x 90 µm typ.)
The FP100 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 um by 100 um Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The FP100 features Si3N4 passivation. Typical applications include general purpose, low noise and broadband amplifiers in the 2-20 GHz range. The device is well-suited for telecommunication applications. · ELECTRICAL SPECIFICATIONS @ TAmbient = 22 ± 3 °C
Parameter Output Power @ 1 d B Compression Power Gain @ 1 d B Compression Maximum Available Gain Noise Figure Power-Added Efficiency Saturated Drain-Source Current Transconductance Pinch-Off Voltage Gate-Drain Breakdown Voltage Magnitude Gate-Source Breakdown Voltage Magnitude Gate-Source Leakage Current Magnitude Symbol P1 d B G1 d B MAG NF IDSS GM VP | VBDGD| | VB D G S| |IGSL | Test Conditions f = 12 GHz; VD S = 5V; ID S = 50% IDSS f = 12 GHz; VD S = 5V; ID S = 50% IDSS f = 12 GHz; VD S = 5V; ID S = 50% ID SS f = 12 GHz; VD S = 5V; ID S = 50% IDSS f = 12 GHz; VD S = 5V; ID S = 50% IDSS; PO U T = 15.5 dBm VD S = 2 V; VG S = 0 V VD S = 2 V; VG S = 0 V VD S = 2 V; ID S = 1 mA IG S = 1 mA IG S = 1 mA VG S = -5 V 20 15 15 -0.50 8 7 10.5 10 4 10 20 -2.5 Min 13 8 14.5 Typ 14 9 15.5 3.0 25 30 Max Units dBm dB dB dB % mA mS V V V µA
Phone: (408) 988-1845 Fax: (408) 970-9950
http:// www.filss.com
Email: sales@filss.com Revised: 07/18/01
PRELIMINARY DATA SHEET
FP100
HIGH PERFORMANCE PHEMT
· RECOMMENDED CONTINUOUS OPERATING LIMITS
Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current RF Input Power Channel Operating Temperature Ambient Temperature Symbol VD S VG S ID S PIN TCH TSTG Nominal 5 -0.8 0.5 IDSS 30 150 -20/50 Units V V mA mW °C °C
Note: Device should be operated at or below Recommended Continuous Operating Limits for reliable performance.
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ABSOLUTE RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current Gate Current RF Input Power Channel Operating Temperature Storage Temperature
to the device.
Symbol VD S VG S ID S IG PIN TCH TSTG
Test Conditions TAmbient = 22 ± 3 °C TAmbient = 22 ± 3 °C TAmbient = 22 ± 3 °C TAmbient = 22 ± 3 °C TAmbient = 22 ± 3 °C TAmbient = 22 ± 3 °C --
Min
Max 7 -3 IDSS 2.5 60 175
Units V V mA mA mW ºC ºC
-65
175
Note: Even temporary operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage
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APPLICATIONS NOTES & DESIGN DATA Applications Notes are available from your local Filtronic Sales Representative or directly from the factory. Complete design data, including S-parameters, noise data, and large-signal models are available on the Filtronic web site.
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HANDLING PRECAUTIONS To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263.
All information and specifications are subject to change without notice.
Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com Email: sales@filss.com Revised: 07/18/01
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