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Details, datasheet, quote on part number:1MBG05D-060
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Datasheet text preview:
1MBC05-060,1MBC05D-060, 1MBG05D-060 600V / 5A Molded Package
Features
· Small molded package · Low power loss · Soft switching with low switching surge and noise · High reliability, high ruggedness (RBSOA, SCSOA etc.) · Comprehensive line-up
Molded IGBT
Applications
· Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified) 1MBC05-060 / IGBT
Item Collector-Emitter voltage Gate-Emitter voltaga Collector DC Tc=25°C current Tc=100°C 1ms Tc=25°C Max. power dissipation(IGBT) Operating temperature Storage temperature S c r e w torque Symbol V CES VGES IC25 IC100 Icp PC Tj Tstg Rating 600 ±20 13 5 52 50 +150 -40 to +150 40 Unit V V A A A W °C °C N·m
Equivalent Circuit Schematic
IGBT
C:Collector
G:Gate
E:Emitter
1MBC05D-060, 1MBG05D-060 / IGBT+FWD
Item Collector-Emitter voltage Gate-Emitter voltaga Collector DC Tc=25°C current Tc=100°C 1ms Tc=25°C Max. power dissipation (IGBT) Max. power dissipation (FWD) Operating temperature Storage temperature S c r e w torque Symbol V CES VGES IC25 IC100 Icp PC PC Tj Tstg Rating 600 ±20 13 5 52 50 25 +150 -40 to +150 40 Unit V V A A A W W °C °C N·m IGBT + FWD
C:Collector
G:Gate
E:Emitter
1MBC05-060, 1MBC05D-060, 1MBG05D-060
Electrical characteristics (at Tj=25°C unless otherwise specified) 1MBC05-060 / IGBT
Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Symbol ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf Characteristics Min. Typ. 5.5 400 85 15 Conditions Max. 1.0 20 8.5 3.0 1.2 0.6 1.0 0.35 VGE=0V, VCE=600V VCE=0V, VGE=±20V VCE=20V, IC=5mA VGE=15V, IC=5A VGE=0V V C E= 1 0 V f=1MHz VCC=300V IC=5A V GE = ± 1 5 V RG=330 ohm (Half Bridge)
Molded IGBT
Unit mA µA V V pF
µs
1MBC05D-060, 1MBG05D-060 / IGBT+FWD
Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time FWD forward on voltage Reverse recovery time Symbol ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf VF tr r Characteristics Min. Typ. 5.5 400 85 15 Conditions Max. 1.0 20 8.5 3.0 1.2 0.6 1.0 0.35 3.0 0.3 VGE=0V, VCE=600V VCE=0V, VGE=±20V VCE=20V, IC=5mA VGE=15V, IC=5A V GE = 0 V V C E= 1 0 V f=1MHz VCC=300V, IC=5A V GE = ± 1 5 V RG=330 ohm (Half Bridge) IF=5A, VGE=0V IF=5A, VGE=-10V, di/dt=100A/µs mA µA V V pF Unit
µs
V µs
Thermal resistance characteristics 1MBC05-060 / IGBT
Item Thermal resistance Symbol Rth(j-c) Characteristics Min. Typ. Conditions Max. 2.50 IGBT °C/W Unit
1MBC05D-060, 1MBG05D-060 / IGBT+FWD
Item Thermal resistance Symbol Rth(j-c) Rth(j-c) Characteristics Min. Typ. Conditions Max. 2.50 5.00 IGBT FWD °C/W °C/W Unit
Outline drawings, mm
1MBC05-060, 1MBC05D-060 TO-110AB 1MBG05D-060 T pack-S (SMD type)
1MBC05-060, 1MBC05D-060, 1MBG05D-060
Characteristics
1MBC05-060,1MBC05D-060,1MBG05D-060 Collector current vs. Collector-Emitter voltage Tj=25°C
10 10
Molded IGBT
Collector current vs. Collector-Emitter voltage Tj=125°C
8
Collector current : Ic [A] Collector current : Ic [A]
8
6
6
4
4
2
2
0
0 0 1 2 3 4 5 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V]
Collector-Emitter vs. Gate-Emitter voltage Tj=25°C
10 10
Collector-Emitter vs. Gate-Emitter voltage Tj=125°C
Collector-Emitter voltage : VCE [V]
8
Collector-Emitter voltage : VCE [V]
8
6
6
4
4
2
2
0 0 5 10 15 20 Gate-Emitter voltage : VGE [V]
0 0 5 10 15 20 Gate-Emitter voltage : VGE [V]
Switching time vs. Collector current Vcc=300V, RG=330 ohm, VGE=±15V, Tj=25°C
1000 1000
Switching time vs. Collector current Vcc=300V, RG=330 ohm, VGE=±15V, Tj=125°C
Switching time : ton, tr, toff, tf [n sec.]
100
Switching time : ton, tr, toff, tf [n sec.]
100
10 0 2 4 Collector current : Ic [A] 6 8
10 0 2 4 6 Collector current : Ic [A] 8
1MBC05-060, 1MBC05D-060, 1MBG05D-060
Characteristics
1MBC05-060,1MBC05D-060,1MBG05D-060 Switching time vs. RG Vcc=300V, Ic=5A, VGE=±15V, Tj=25°C Switching time vs. RG
IGBT Module
Vcc=300V, Ic=5A, VGE=±15V, Tj=125°C
Switching time : ton, tr, toff, tf [n sec.]
Switching time : ton, tr, toff, tf [n sec.]
1000
1000
100
100
10 0 500 1000 1500 2000 2500 Gate resistance : RG [ohm]
10 0 500 1000 1500 2000 2500 Gate resistance : RG [ohm]
Dynamic input characteristics
500
Capacitance vs. Collector-Emitter voltage
25 1000
Tj=25°C
Tj=25°C
Collector-Emitter voltage : VCE [V]
400
Capacitance : Cies, Coes, Cres [nF]
20
300
15
200
10
Gate-Emitter voltage : VGE [V]
100
10
100
5
0 0 5 10 15 20 Gate charge : Qg [nC] 25 30
0
1 0 5 10 15 20 25 Collector-Emitter voltage : VCE [V] 30 35
12
Reversed biased safe operating area 330 ohm = =
80
Typical short circuit capability Vcc=400V, RG=330 ohm, Tj=125°C
80
10
Short circuit time current : Isc [A]
60
60
Collector current : Ic [A]
8
6
40
40
4
20 2
20
0
0
100
200
300
400
500
600
700
0
5
10
15 Gate voltage : VGE [V]
20
25
0
Collector-Emitter voltage : VCE [V]
Short circuit time : tsc [µs]
1MBC05-060, 1MBC05D-060, 1MBG05D-060
Characteristics
1MBC05-060,1MBC05D-060,1MBG05D-060 Transient thermal resistance
IGBT Module
Thermal resistance : Rth (j-c) [°C/W]
101
100
1 0- 1
1 0- 2 10-4 10-3 10-2 Pulse width : PW [sec.] 10-1 100
1MBC05D-060,1MBG05D-060 Reverse recovery time vs. Forward current
500
-di/dt=15A / µsec
1.2
Reverse recovery current vs. Forward current -di/dt=15A / µsec
400
1.0
reverse recovery time : trr [nsec]
reverse recovery current : Irr [A]
300
0.8
0.6
200
0.4
100
0.2
0 0 2 4 Forward current : IF [A] 6 8
0
1
2
3
4
5
6
7
8
Forward current : IF [A]
Forward current vs. Foeward voltage
500
10
Reverse recovery time characteristics vs. -di/dt IF=5A, Tj=125°C
2.5
400
8
2.0
reverse recovery time : trr [nsec]
300
1.5
6
Forward current : IF [A]
4
200
1.0
2
100
0.5
0
0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 20 40 -di/dt 60 [ A / µsec ] 80 Forward voltage : VF [V]
0.0
100
reverse recovery current : Irr [A]
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