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Part: 2MBI100NC-120
Category:
Discrete
-> IGBTs (Insulated Gate Bipolar Transistors)
-> IGBT Modules
Description: Igbt Module (N Series)
Company: Fuji Electric Corp. of America
Datasheet: Download 2MBI100NC-120 datasheet File size : 132 kB
Request For quote: Find where to buy 2MBI100NC-120
Datasheet text preview:
2MBI100NC-120
1200V / 100A 2 in one-package
IGBT Module
Features
· High speed switching · Voltage drive · Low inductance module structure
Applications
· Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply · Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item Collector-Emitter voltage Gate-Emitter voltaga Collector Continuous current 1ms Continuous 1ms Max. power dissipation Operating temperature Storage temperature Isolation voltage Screw torque Symbol VCES VGES IC IC pulse -IC -IC pulse PC Tj Tstg Vi s Mounting *1 Terminals *1 Rating 1200 ±20 100 200 100 200 780 +150 -40 to +125 AC 2500 (1min.) 3.5 3.5 Unit V V A A A A W °C °C V N·m N·m
Equivalent Circuit Schematic
C2E1
C1
E2
¤
¤
G1
E1 G2 ¤ Current control circuit
E2
*1 : Recommendable value : 2.5 to 3.5 N·m(M5)
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Diode forward on voltage Reverse recovery time Symbol ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf VF tr r Characteristics Min. Typ. Max. 2.0 30 4.5 7.5 3.3 16000 5800 5160 0. 6 5 1 . 2 0. 2 5 0 . 6 0. 8 5 1 . 5 0. 3 5 0 . 5 3.0 0.35 Conditions VGE=0V, VCE=1200V VCE=0V, VGE=±20V VCE=20V, IC=100mA VGE=15V, IC=100A VGE=0V VCE=10V f=1MHz VCC=600V IC=100A VGE=±15V RG=9.1 ohm IF=100A, VGE=0V IF=100A Unit mA µA V V pF
µs
V µs
Thermal resistance characteristics
Item Thermal resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f)* 2 Characteristics Min. Typ. 0.025 Conditions Max. 0.16 0.33 IGBT Diode the base to cooling fin °C/W °C/W °C/W Unit
*2 : This is the value which is defined mounting on the additional cooling fin with thermal compound
2MBI100NC-120
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage Tj=25°C 250 250
IGBT Module
Collector current vs. Collector-Emitter voltage Tj=125°C
200
200
Collector current : Ic [A]
150
Collector current : Ic [A] 0 1 2 3 4 5
150
100
100
50
50
0
0
0
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
Collector-Emitter vs. Gate-Emitter voltage Tj=25°C
Collector-Emitter vs. Gate-Emitter voltage Tj=125°C
10 VCE [V] VCE [V] Collector-Emitter voltage : 0 5 10 15 20 25
10
8
8
Collector-Emitter voltage :
6
6
4
4
2
2
0 Gate-Emitter voltage : VGE [V]
0 0 5 10 15 20 25 Gate-Emitter voltage : VGE [V]
Switching time vs. Collector current Vcc=600V, RG=9.1 ohm, VGE=±15V, Tj=25°C 1000 1000 Switching time : ton, tr, toff, tf [n sec.] Switching time : ton, tr, toff, tf [n sec.]
Switching time vs. Collector current Vcc=600V, RG=9.1 ohm, VGE=±15V, Tj=125°C
100
100
10 0 50 100 Collector current : Ic [A] 150 200
10 0 50 100 Collector current : Ic [A] 150 200
2MBI100NC-120
IGBT Module
Switching time vs. RG Vcc=600V, Ic=100A, VGE=±15V, Tj=25°C 1000
Dynamic input characteristics Tj=25°C 25
Switching time : ton, tr, toff, tf [n sec.]
Collector-Emitter voltage : VCE [V]
800
20
1000
600
15
400
10
200
5
100
10 Gate resistance : RG [ohm]
30
50
0 0
400
800
0 1200
Gate charge : Qg [nC]
Forward current vs. Forward voltage VGE=0V 250
Reverse recovery characteristics trr, Irr, vs. IF
150
Reverse recovery current : Irr [A] Reverse recovery time : trr [n sec.]
200 Collector current : -Ic [A] (Forward current : IF [A] )
100
100
50
50
0 0 1 2 3 4 5 Emitter-Collector voltage VECD [V] (Forward voltage : VF [V])
10 0 50 100 Forward current : IF [A] 150 200
Switching loss vs. Collector current Vcc=600V, RG=9.1 ohm, VGE=±15V 40 1000
Reversed biased safe operating area 9.1 ohm = =
Switching loss : Eon, Eoff, Err [mJ/cycle]
800 30 Collector current : Ic [A]
600
20
400
10 200
0 0 50 100 150 200 Collector current : Ic [A]
0 0 200 400 600 800 1000 Collector-Emitter voltage : VCE [V] 1200
Gate-Emitter voltage : VGE [V]
2MBI100NC-120
IGBT Module
Transient thermal resistance 1
Capacitance vs. Collector-Emitter voltage Tj=25°C
Thermal resistance : Rth (j-c) [°C/W]
Capacitance : Cies, Coes, Cres [nF]
0.1
10
0.01
1
0.001 0.001 0.01 0.1 1 0 5 10 15 20 25 30 35 Pulse width : PW [sec.] Collector-Emitter voltage : VCE [V]
Outline Drawings, mm
mass : 240g
Others parts begin by 2m
2M-1
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