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Part: 2MBI100SC-120
Category:
Discrete
-> IGBTs (Insulated Gate Bipolar Transistors)
-> IGBT Modules
Description:
Company: Fuji Electric Corp. of America
Datasheet: Download 2MBI100SC-120 datasheet File size : 141 kB
Request For quote: Find where to buy 2MBI100SC-120
Datasheet text preview:
2MBI100SC-120
1200V / 100A 2 in one-package
Features
· High speed switching · Voltage drive · Low inductance module structure
IGBT Module
Applications
· Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply · Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item Collector-Emitter voltage Gate-Emitter voltaga Collector Continuous current 1ms Symbol V CES VGES Tc=25°C IC Tc=80°C Tc=25°C IC pulse Tc=80°C -IC -IC pulse PC Tj Tstg V is Mounting *2 Terminals *2 Rating 1200 ±20 150 100 300 200 100 200 780 +150 -40 to +125 AC 2500 (1min. ) 3.5 3.5 Unit V V A A A A A A W °C °C V N·m N·m
Equivalent Circuit Schematic
C2E1 E2
C1
1ms Max. power dissipation Operating temperature Storage temperature Isolation voltage *1 S c r e w torque
G1
E1
G2
E2
*1 : Aii terminals should be connected together when isolation test will be done *2 : Recommendable value : 2.5 to 3.5 N·m(M5)
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Symbol ICES IGES V GE(th) VCE(sat) Cies Coes Cres ton tr tr ( i ) toff tf VF trr Symbol Rth(j-c) Rth(j-c) Rth(c-f)* 2 Characteristics Min. Typ. Max. 2.0 0.4 5.5 7.2 8.5 2.3 2.6 2.8 12000 2500 2200 0.35 1.2 0.25 0.6 0.1 0.45 1.0 0.08 0.3 2.3 3.0 2.0 0.35 Characteristics Min. Typ. 0.05 Conditions VGE=0V, VCE=1200V VCE=0V, VGE=±20V VCE=20V, IC=100mA Tc=25° C VGE=15V, IC=100A Tc=125°C VG E = 0 V V C E= 1 0 V f=1MHz VCC = 6 0 0 V IC=100A VG E = ± 1 5 V RG=9.1 ohm Tj=25°C Tj=125°C IF=100A Conditions Max. 0.16 0.33 IGBT Diode the base to cooling fin °C/W °C/W °C/W IF=100A, VGE=0V Unit mA µA V V pF
µs
Turn-off time Forward on voltage Reverse recovery time Item Thermal resistance
V µs Unit
Thermal resistance characteristics
*2 : This is the value which is defined mounting on the additional cooling fin with thermal compound
2MBI100SC-120
Characteristics (Representative)
250 Collector current vs. Collector-Emiiter voltage Tj= 25°C (typ.) 250
IGBT Module
Collector current vs. Collector-Emiiter voltage Tj= 125°C (typ.)
200
VGE= 20V15V 12V
200
VGE= 20V15V 12V
Collector current : Ic [ A ]
150 10V 100
Collector current : Ic [ A ]
150 10V
100
50
50 8V
0
8V 0 1 2 3 4 5
0
0
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
Collector current vs. Collector-Emiiter voltage VGE=15V (typ.) 250 10
Collector-Emiiter voltage vs. Gate-Emitter voltage Tj= 25°C (typ.)
Tj= 25°C 200
Tj= 125°C
150
Collector - Emitter voltage : VCE [ V ]
8
Collector current : Ic [ A ]
6
100
4 Ic= 200A 2 Ic= 100A Ic=50A
50
0
0
1
2
3
4
5
0
5
10
15
20
25
Collector - Emitter voltage : VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
Capacitance vs. Collector-Emiiter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C 50000 1000
Dynamic Gate charge (typ.) Vcc=600V, Ic=100A, Tj= 25°C 25
Capacitance : Cies, Coes, Cres [ pF ]
Cies
5000
600
15
1000
400
10
Coes Cres
200
5
100
0
5
10
15
20
25
30
35
0
0
200
400
600
800
0 1000
Collector - Emitter voltage : VCE [ V ]
Gate charge : Qg [ nC ]
Gate - Emitter voltage : VGE [ V ]
10000
Collector - Emitter voltage : VCE [ V ]
800
20
2MBI100SC-120
IGBT Module
1000
Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg= 9.1 ohm, Tj= 25°C
1000
Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg= 9.1ohm, Tj= 125°C
toff
Switching time : ton, tr, toff, tf [ nsec ]
500
Switching time : ton, tr, toff, tf [ nsec ]
toff
500
ton
ton tr
tr
tf 100
100 tf
50
0
50
100
150
50
0
50
100
150
Collector current : Ic [ A ]
Collector current : Ic [ A ]
Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=100A, VGE=±15V, Tj= 25°C 5000 ton 30
Switching loss vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=9.1ohm
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
toff
25
Switching time : ton, tr, toff, tf [ nsec ]
tr 1000
Eon(125°C)
20 Eon(25°C) 15 Eoff(125°C) 10 Eoff(25°C) Err(125°C) 5 Err(25°C)
500
100
tf
50
1
10 Gate resistance : Rg [ohm]
100
300
0
0
50
100 Collector current : Ic [ A ]
150
200
Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=100A, VGE=±15V, Tj= 125°C 70 Eon 60 250
Reverse bias safe operating area +VGE=15V, -VGE=9.1ohm, Tj=<125°C
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
200 50
Collector current : Ic [ A ]
300
40
150
30
100
20
Eoff
50 10 Err 1 10
Gate resistance : Rg [ohm]
0
100
0
0
200
400
600
800
1000
1200
1400
Collector - Emitter voltage : VCE [ V ]
2MBI100SC-120
Forward current vs. Forward on voltage (typ.) 250 500
IGBT Module
Reverse recovery characteristics (typ.) Vcc=600V, VGE=±15V, Rg=9.1ohm
Tj=125°C 200
Tj=25°C
150
Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ]
Irr(125°C)
Forward current : IF [ A ]
100
trr(125°C) Irr(25°C) trr(25°C)
100
50
0
0
1
2
3
4
10
0
50
100
150
Forward on voltage : VF [ V ]
Forward current : IF [ A ]
Transient thermal resistance 1 FWD
Thermal resistanse : Rth(j-c) [ °C/W ]
0.1 0.05
IGBT
0.01
1E-3 0.001
0.01
0.1
1
Pulse width : Pw [ sec ]
Outline Drawings, mm
mass : 240g
Others parts begin by 2m
2M-1
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