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Part: 2MBI150P-140
Category:
Discrete
Description: Igbt Module ( P-series )
Company: Fuji Electric Corp. of America
Datasheet: Download 2MBI150P-140 datasheet File size : 336 kB
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Datasheet text preview:
2MBI 150P-140
IGBT MODULE ( P-Series ) n Features
· Square SC SOA at 10 x IC · Simplified Parallel Connection · Narrow Distribution of Characteristics · High Short Circuit Withstand-Capability
2-Pack IGBT 1400V 150A
n Outline Drawing
n Applications
· High Power Switching · A.C. Motor Controls · D.C. Motor Controls · Uninterruptible Power Supply
n Maximum Ratings and Characteristics
· Absolute Maximum Ratings
Items Collector-Emitter Voltage Gate -Emitter Voltage ( Tc=25°C) Symbols VCES VGES Continuous TC=25°C IC Continuous TC=80°C 1ms TC=25°C IC PULSE 1ms TC=80°C -IC 1ms -IC PULSE PC Tj Tstg A.C. 1min. Vis Mounting *1 Terminals *2 Ratings 1400 ± 20 200 150 400 300 150 300 1100 +150 -40 +125 2500 3.5 3.5 Units V V
n Equivalent Circuit
Collector Current
A
Max. Power Dissipation Operating Temperature Storage Temperature Isolation Voltage Screw Torque
W °C °C V Nm
Note: *1:Recommendable Value; 2.5 3.5 Nm (M5)
· Electrical Characteristics
Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time
( at Tj=25°C ) Symbols ICES IGES VGE(th) VCE(sat) Ci e s Co e s Cr e s tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=1400V VCE=0V VGE=± 20V VGE=20V IC=150mA Tj= 25°C VGE=15V IC=150A Tj=125°C VGE=15V IC=150A VGE=0V VCE=10V f=1MHz VCC=600V IC=150A VGE=± 15V RG=5.6 IF=150A VGE=0V IF=150A Min. Typ. Max. 2.0 400 9.0 3.0 Units mA µA V V pF 1.2 0.6 1.0 0.3 3.3 350
6.0
8.0 2.7 3.3 15000 2000 1000
µs V ns
2.4
· Thermal Characteristics
Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) R th(c-f) Test Conditions IGBT Diode With Thermal Compound Min. Typ. Max. 0.11 0.24 Units °C/W
0.025
2MBI 150P-140
C o l l e c t o r Current vs. Collector-Emitter Voltage 400 T j= 2 5 ° C 400 T j= 1 2 5 ° C
2-Pack IGBT 1400V 150A
C o l l e c t o r Current vs. Collector-Emitter Voltage
[A]
300 12V
[A]
V GE= 2 0 V 1 5 V
300
V GE= 2 0 V
15V
C
Collector Current : I
Collector Current : I
C
12V 200 11V 100 10V
200 11V 100 10V 0 0 1 2 3 4 5 C o l l e c t o r - E m i t t e r Voltage : V C E [V] 6
0 0 1 2 3 4 5 C o l l e c t o r - E m i t t e r Voltage : V C E [V] 6
C o l l e c t o r - E m i t t e r vs. Gate-Emitter Voltage T j= 2 5 ° C
C o l l e c t o r - E m i t t e r vs. Gate-Emitter Voltage T j= 1 2 5 ° C
[V]
CE
CE
[V] Collector Emitter Voltage : V
10
10
Collector Emitter Voltage : V
8
8
6
6 I C= 3 0 0 A
4 IC= 3 0 0 A 2 IC= 1 5 0 A IC= 7 5 A 0 0 5 10 15 20 G a t e - E m i t t e r Voltage : V G E [V] 25
4
2
I C= 1 5 0 A I C= 7 5 A
0 0 5 10 15 20 G a t e - E m i t t e r Voltage : V G E [V] 25
S w i t c h i n g Time vs. Collector Current V C C = 6 0 0 V , R G = 5 , 6 , V G E = ± 1 5 V , T j= 2 5 ° C
S w i t c h i n g Time vs. Collector Current V C C = 6 0 0 V , R G = 5 , 6 , V G E = ± 1 5 V , T j= 1 2 5 ° C
, t r, t off , t f [nsec]
1000
, t r, t off , t f [nsec]
t on 1000 tr t off
t on tr t off tf
on
on
Switching Time : t
100
Switching Time : t
tf 100
10 0 100 200 300 C o l l e c t o r Current: I C (A)
10 0 100 200 300 C o l l e c t o r Current: I C (A)
2MBI 150P-140
S w i t c h i n g Time vs. R G V C C = 6 0 0 V , I C = 1 5 0 A , V G E = ± 1 5 V , T j= 2 5 ° C 10000 1000 T j= 2 5 ° C
2-Pack IGBT 1400V 150A
C o l l e c t o r Current vs. Collector-Emitter Voltage 25 V C C= 4 0 0 , 6 0 0 , 8 0 0 V 20
Switching Time : t , n t , t , ff t f [nsec] o r o
[V]
t on tr t off
GE
800
Collector-Emitter-Voltage : V
1000
600
15
100
tf
400
10
200
5
10 1 10 G a t e Resistance : R G [ ] 100
0 0 200 400 600 800 1000 G a t e C h a r g e : Q g (nC)
0 1200
F o r w a r d Voltage vs. Forward Current 400 V GE= 0 V 1000
R e v e r s e Recovery Characteristics t r r , I r r vs. I F
[A]
Reverse Recovery Current : I
F
rr
300
T j= 1 2 5 ° C
rr
25°C
[nsec]
[A]
Reverse Recovery Time : t
Forward Current : I
t r r= 1 2 5 ° C tr r = 2 5 ° C Ir r = 1 2 5 ° C I rr= 2 5 ° C
200
100
100
0 0 1 2 F o r w a r d Voltage : V F [V] 3 4
10 0 100 200 300 F o r w a r d Current : I F [A]
R e v e r s e Biased Safe Operating Area T r a n s i e n t Thermal Resistance 2500 + V G E= 1 5 V , -V G E 1 5 V , T j 1 2 5 ° C , R G 4 , 7 SCSOA
[°C/W]
FWD 10
-1
2000
C
( n o n - r e p e t i t i v e pulse)
th(j-c)
IGBT
[A]
Thermal Resistance : R
Collector Current : I
1500
1000
10
-2
500 R B S O A (Repetitive pulse)
10
-3
0
-3
10
10
-2
10
-1
10
0
0
200
400
600
800
1000
1200
1400
1600
P u l s e Width : P W [sec]
C o l l e c t o r - E m i t t e r Voltage : V C E [V]
Gate-Emitter Voltage : V
GE
[V]
2MBI 150P-140
S w i t c h i n g Loss vs. Collector Current 80 V CC= 6 0 0 V , R G= 5 , 6 , V GE= ± 1 5 V 100 T j= 2 5 ° C
2-Pack IGBT 1400V 150A
C a p a c i t a n c e vs. Collector-Emitter Voltage
, E off , E rr [mJ/cycle]
E on1 2 5 ° C 60
, C oes , C res [nF]
10
C ies
40
Switching Loss : E
Capacitance: C
E on 2 5 ° C E off 1 2 5 ° C
ies
on
1
C oes C res
20
E off
25°C
E rr 1 2 5 ° C E rr 0 0 50 100 150 200 C o l l e c t o r Current : I C [A] 250 300 25°C
0,1 0 5 10 15 20 25 30 C o l l e c t o r Emitter Voltage : V C E [V] 35
For more information, contact: Collmer Semiconductor, Inc. P.O. Box 702708 Dallas, TX 75370 972-233-1589 972-233-0481 Fax http://www.collmer.com
Others parts begin by 2m
2M-1
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