|
|
Part: 2MBI150SC-120
Category:
Discrete
-> IGBTs (Insulated Gate Bipolar Transistors)
-> IGBT Modules
Description:
Company: Fuji Electric Corp. of America
Datasheet: Download 2MBI150SC-120 datasheet File size : 137 kB
Request For quote: Find where to buy 2MBI150SC-120
Datasheet text preview:
2MBI150SC-120
1200V / 150A 2 in one-package
Features
· High speed switching · Voltage drive · Low inductance module structure
IGBT Module
Applications
· Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply · Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item Collector-Emitter voltage Gate-Emitter voltaga Collector Continuous current 1ms Symbol V CES VGES Tc=25°C IC Tc=80°C Tc=25°C IC pulse Tc=80°C -IC -IC pulse PC Tj Tstg V is Mounting *2 Terminals *2 Rating 1200 ±20 200 150 400 300 150 300 1000 +150 -40 to +125 AC 2500 (1min. ) 3.5 3.5 Unit V V A A A A A A W °C °C V N·m N·m
Equivalent Circuit Schematic
C2E1 E2
C1
1ms Max. power dissipation Operating temperature Storage temperature Isolation voltage *1 S c r e w torque
G1
E1
G2
E2
*1 : Aii terminals should be connected together when isolation test will be done *2 : Recommendable value : 2.5 to 3.5 N·m(M5)
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Symbol ICES IGES V GE(th) VCE(sat) Cies Coes Cres ton tr tr ( i ) toff tf VF trr Symbol Rth(j-c) Rth(j-c) Rth(c-f)* 2 Characteristics Min. Typ. Max. 2.0 0.4 5.5 7.2 8.5 2.3 2.6 2.8 18000 3750 3300 0.35 1.2 0.25 0.6 0.1 0.45 1.0 0.08 0.3 2.3 3.0 2.0 0.35 Characteristics Min. Typ. 0.025 Conditions VGE=0V, VCE=1200V VCE=0V, VGE=±20V VCE=20V, IC=150mA Tc=25° C VGE=15V, IC=150A Tc=125°C VG E = 0 V V C E= 1 0 V f=1MHz VCC = 6 0 0 V IC=150A VG E = ± 1 5 V RG=5.6 ohm Tj=25°C Tj=125°C IF=150A Conditions Max. 0.125 IGBT 0 . 2 6 Diode the base to cooling fin °C/W °C/W °C/W IF=150A, VGE=0V Unit mA µA V V pF
µs
Turn-off time Forward on voltage Reverse recovery time Item Thermal resistance
V µs Unit
Thermal resistance characteristics
*2 : This is the value which is defined mounting on the additional cooling fin with thermal compound
2MBI150SC-120
Characteristics (Representative)
Collector current vs. Collector-Emiiter voltage Tj= 25°C (typ.)
IGBT Module
350
350
Collector current vs. Collector-Emiiter voltage Tj= 125°C (typ.)
300
VGE= 20V15V 12V
300
VGE= 20V 15V 12V
250
250
Collector current : Ic [ A ]
Collector current : Ic [ A ]
200 10V 150
200
10V
150
100
100
50 8V 0 1 2 3 4 5
50
8V
0
0
0
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
Collector current vs. Collector-Emiiter voltage VGE=15V (typ.) 350 Tj= 25°C Tj= 125°C 8 250 10
Collector-Emiiter voltage vs. Gate-Emitter voltage Tj= 25°C (typ.)
300
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
200
6
150
4 Ic= 300A 2 Ic= 150A Ic= 75A
100
50
0
0
1
2
3
4
5
0
5
10
15
20
25
Collector - Emitter voltage : VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
Capacitance vs. Collector-Emiiter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C 50000 1000
Dynamic Gate charge (typ.) Vcc=600V, Ic=150A, Tj= 25°C
ùü
800
ù÷
Capacitance : Cies, Coes, Cres [ pF ]
10000
600
øü
5000
400
ø÷
Coes 1000 Cres
200
ü
500
0
5
10
15
20
25
30
35
0
0
500
1000
1500
÷
Collector - Emitter voltage : VCE [ V ]
Gate charge : Qg [ nC ]
Gate - Emitter voltage : VGE [ V ]
Cies
Collector - Emitter voltage : VCE [ V ]
2MBI150SC-120
IGBT Module
1000
Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg= 5.6ohm, Tj= 25°C
1000
Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg= 5.6ohm, Tj= 125°C
toff
Switching time : ton, tr, toff, tf [ nsec ]
Switching time : ton, tr, toff, tf [ nsec ]
500
toff
500
ton
ton tr
tr
tf 100
100 tf
50
0
50
100
150
200
250
50
0
50
100
150
200
250
Collector current : Ic [ A ]
Collector current : Ic [ A ]
Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=150A, VGE=±15V, Tj= 25°C 5000 ton 40
Switching loss vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=5.6ohm
Eon(125°C)
tr 1000
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
toff
Switching time : ton, tr, toff, tf [ nsec ]
30
Eon(25°C) 20 Eoff(125°C)
500
10
Eoff(25°C) Err(125°C)
100
tf
Err(25°C) 50 1 10 Gate resistance : Rg [ ohm ] 100 0
0 100 200 300
Collector current : Ic [ A ]
Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=150A, VGE=±15V, Tj= 125°C 100 Eon 300 350
Reverse bias safe operating area +VGE=15V, -VGE=5.6ohm, Tj<=125°C
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
80 250 60
Collector current : Ic [ A ]
100
200
40 Eoff 20
150
100
50 Err 0 1 10 Gate resistance : Rg [ ohm ] 0 0 200 400 600 800 1000 1200 1400
Collector - Emitter voltage : VCE [ V ]
2MBI150SC-120
IGBT Module
Forward current vs. Forward on voltage (typ.) 350 Tj=125°C Tj=25°C trr(125°C) 300
Reverse recovery characteristics (typ.) Vcc=600V, VGE=±15V, Rg=5.6ohm
300
250
Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ]
Irr(125°C) 100 trr(25°C) Irr(25°C)
Forward current : IF [ A ]
200
150
100
50
0
0
1
2 Forward on voltage : VF [ V ]
3
4
10
0
50
100
150
200
250
Forward current : IF [ A ]
Transient thermal resistance 0.5
FWD
Thermal resistanse : Rth(j-c) [ °C/W ]
IGBT 0.1
0.05
0.01
0.005 0.001
0.01
0.1
1
Pulse width : Pw [ sec ]
Outline Drawings, mm
mass : 240g
Others parts begin by 2m
2M-1
|
|
|
