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Part: 2MBI200N-120
Category:
Discrete
-> IGBTs (Insulated Gate Bipolar Transistors)
-> IGBT Modules
Description: Igbt Module (N-series)
Company: Fuji Electric Corp. of America
Datasheet: Download 2MBI200N-120 datasheet File size : 137 kB
Request For quote: Find where to buy 2MBI200N-120
Datasheet text preview:
2MBI200N-120
1200V / 200A 2 in one-package
Features
· High speed switching · Voltage drive · Low inductance module structure
IGBT Module
Applications
· Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply · Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item Collector-Emitter voltage Gate-Emitter voltaga Rating 1200 ±20 Collector Continuous IC 200 current 1ms IC pulse 400 Continuous -IC 200 1ms -IC pulse 400 Max. power dissipation PC 1500 Operating temperature Tj +150 Storage temperature Tstg -40 to +125 Isolation voltage Vi s AC 2500 (1min.) Screw torque Mounting *1 3.5 Terminals *2 4.5 Terminals *3 1.7 *1 : Recommendable value : 2.5 to 3.5 N·m(M5) or (M6) *2 : Recommendable value : 3.5 to 4.5 N·m(M6) *3 : Recommendable value : 1.3 to 1.7 N·m(M4) Symbol VCES VGES Unit V V A A A A W °C °C V N·m N·m N·m
Equivalent Circuit Schematic
C2E1
C1
E2
¤
¤
G1
E1 G2 ¤ Current control circuit
E2
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Diode forward on voltage Reverse recovery time Symbol ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf VF tr r Characteristics Min. Typ. 4.5 Conditions Max. VGE=0V, VCE=1200V VCE=0V, VGE=±20V VCE=20V, IC=200mA VGE=15V, IC=200A VGE=0V VCE=10V f=1MHz VCC=600V IC=200A VGE=±15V RG=4.7 ohm IF=200A, VGE=0V IF=200A mA µA V V pF Unit
4.0 60 7.5 3.3 32000 11600 10320 0. 6 5 1 . 2 0. 2 5 0 . 6 0. 8 5 1 . 5 0. 3 5 0 . 5 3.0 0.35
µs
V µs
Thermal resistance characteristics
Item Thermal resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f)* 4 Characteristics Min. Typ. 0.0125 Conditions Max. 0.085 0.22 IGBT Diode the base to cooling fin Unit °C/W °C/W °C/W
*4 : This is the value which is defined mounting on the additional cooling fin with thermal compound
2MBI200N-120
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage Tj=25°C 500 500
IGBT Module
Collector current vs. Collector-Emitter voltage Tj=125°C
400
400
Collector current : Ic [A]
Collector current : Ic [A] 0 1 2 3 4 5
300
300
200
200
100
100
0 Collector-Emitter voltage : VCE [V]
0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V]
Collector-Emitter vs. Gate-Emitter voltage Tj=25°C
Collector-Emitter vs. Gate-Emitter voltage Tj=125°C
10 VCE [V] VCE [V] Collector-Emitter voltage : 0 5 10 15 20 25
10
8
8
Collector-Emitter voltage :
6
6
4
4
2
2
0 Gate-Emitter voltage : VGE [V]
0 0 5 10 15 20 25 Gate-Emitter voltage : VGE [V]
Switching time vs. Collector current Vcc=600V, RG=4.7 ohm, VGE=±15V, Tj=25°C 1000 1000 Switching time : ton, tr, toff, tf [n sec.] Switching time : ton, tr, toff, tf [n sec.]
Switching time vs. Collector current Vcc=600V, RG=4.7 ohm, VGE=±15V, Tj=125°C
100
100
10 0 100 200 Collector current : Ic [A] 300 400
10 0 100 200 Collector current : Ic [A] 300 400
2MBI200N-120
IGBT Module
Switching time vs. RG Vcc=600V, Ic=200A, VGE=±15V, Tj=25°C 1000
Dynamic input characteristics Tj=25°C 25
Switching time : ton, tr, toff, tf [n sec.]
Collector-Emitter voltage : VCE [V]
800
20
1000
600
15
400
10
200
5
100
10 Gate resistance : RG [ohm]
30
0 0
500
1000
1500
2000
0 2500
Gate charge : Qg [nC]
Forward current vs. Forward voltage VGE=0V 500
Reverse recovery characteristics trr, Irr, vs. IF
300
200
Reverse recovery current : Irr [A] Reverse recovery time : trr [n sec.]
400 Collector current : -Ic [A] (Forward current : IF [A] )
100
100
0 0 1 2 3 4 5 0 100 200 Forward current : IF [A] 300 400 Emitter-Collector voltage VECD [V] (Forward voltage : VF [V])
Switching loss vs. Collector current Vcc=600V, RG=4.7 ohm, VGE=±15V 2000 60 Switching loss : Eon, Eoff, Err [mJ/cycle] 1600 50 Collector current : Ic [A]
Reversed biased safe operating area 4.7 ohm = =
40
1200
30
800
20
400 10
0 0 100 200 300 400 Collector current : Ic [A]
0 0 200 400 600 800 1000 Collector-Emitter voltage : VCE [V] 1200
Gate-Emitter voltage : VGE [V]
2MBI200N-120
IGBT Module
Transient thermal resistance
Capacitance vs. Collector-Emitter voltage Tj=25°C
100 Thermal resistance : Rth (j-c) [°C/W] Capacitance : Cies, Coes, Cres [nF]
0.1
10
0.01
0.001 0.001 0.01 0.1 1 Pulse width : PW [sec.]
1 0 5 10 15 20 25 30 35 Collector-Emitter voltage : VCE [V]
Outline Drawings, mm
mass : 370g
Others parts begin by 2m
2M-1
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