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Part: 2SK1088-M
Category:
Discrete
Description: N-channel MOS-FET
Company: Fuji Electric Corp. of America
Datasheet: Download 2SK1088-M datasheet File size : 141 kB
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Datasheet text preview:
F-III Series
> Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance
2SK1088-M
N-channel MOS-FET
150V
0,3
9A
35W
> Outline Drawing
> Applications
- Motor Control - General Purpose Power Amplifier - DC-DC converters
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Continous Reverse Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I I V P T T
D(puls) DR GS D ch stg
> Equivalent Circuit
Rating 150 9 36 9 ±20 35 150 -55 ~ +150 Unit V A A A V W °C °C
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Diode Forward On-Voltage Reverse Recovery Time Symbol V (BR)DSS V I I R g C C C t t t t V t
GS(th) DSS
Test conditions ID=1mA VGS=0V ID=1mA VDS=150V VGS=0V VGS=±20V ID=4,5A ID=4,5A ID=4,5A VDS=VGS Tch=25°C Tch=125°C VDS=0V VGS=4V VGS=10V VDS=25V VDS=25V VGS=0V f=1MHz VCC=30V ID=9A VGS=10V RGS=25 IF=2xIDR VGS=0V Tch=25°C IF=IDR VGS=0V -dIF/dt=100A/µs Tch=25°C
Min. 150 1,0
Typ. 1,5 10 0,2 10 0,26 0,20
Max. 2,5 500 1,0 100 0,40 0,30 1200 230 60 15 60 230 45 1,5
Unit V V µA mA nA S pF pF pF ns ns ns ns V ns
GSS DS(on)
fs iss oss rss d(on) r d(off) f SD rr
5
10 900 150 40 10 40 150 30 1,1 100
- Thermal Characteristics Item Thermal Resistance
Symbol R th(ch-a) R
th(ch-c)
Test conditions channel to air channel to case
Min.
Typ.
Max. 62,5 3,57
Unit °C/W °C/W
FUJI ELECTRIC GmbH; Lyoner Straße 26; D-60528 Frankfurt; Tel: 069-66 90 29-0; Fax: 069-66 90 29-56
N-channel MOS-FET
150V
0,3
9A
35W
F-III Series
2SK1088-M
Drain-Source-On-State Resistance vs. Tch Typical Transfer Characteristics
> Characteristics
Typical Output Characteristics
ID [A]
1
RDS(ON) []
2
ID [A]
3
VDS [V]
Tch [°C]
VGS [V]
Typical Drain-Source-On-State-Resistance vs. ID
Typical Forward Transconductance vs. ID
Gate Threshold Voltage vs. Tch
RDS(ON) []
4
gfs [S]
5
VGS(th) [V]
6
ID [A]
ID [A]
Tch [°C]
Typical Capacitance vs. VDS
Typical Input Charge
Forward Characteristics of Reverse Diode
C [nF]
7
VDS [V]
8
VGS [V]
IF [A]
9
VDS [V]
Qg [nC]
VSD [V]
Allowable Power Dissipation vs. TC
Safe operation area
Zth(ch-c) [K/W]
Transient Thermal impedance
PD [W]
10
ID [A]
12
11
Tc [°C]
VDS [V]
t [s]
This specification is subject to change without notice!
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