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Part: 2SK1552-01L
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
-> N-Channel
-> High voltage
Description: N-channel Silicon Power MOSFET
Company: Fuji Electric Corp. of America
Datasheet: Download 2SK1552-01L datasheet File size : 153 kB
Request For quote: Find where to buy 2SK1552-01L
Datasheet text preview:
2SK1552-01L,S
N-CHANNEL SILICON POWER MOSFET
Features
High current Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee
FUJI POWER MOSFET
F- II SERIES
Outline Drawings
10 +0.5
0.9 ±0.3
4.5 ±0.2 1.32
9.3 ±0.5
1.5 Max
1.2 ±0.2 5.08
0.8 --0.1 2.7
+0.2
0.4 +0.2
Applications
Switching regulators UPS DC-DC converters General purpose power amplifier
EIAJ
1:Gate 2:Drain 3:Source
1. Gate 2, 4. Drain 3. Source
L-type
S-type
Maximum ratings and characteristics
Absolute maximum ratings ( Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Continuous reverse drain current Gate-source peak voltage Max. power dissipation Operating and storage temperature range Symbol VDS ID ID(puls] IDR V GS PD Tch Tstg Rating 800 4 10 4 ±30 60 +150 -55 to +150 Unit V A A A V W °C °C
Equivalent circuit schematic
Drain(D)
Gate(G) Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton (ton=td(on)+tr) Turn-off time toff (toff=td(off)+tf) Diode forward on-voltage Reverse recovery time Symbol V( B R ) D S S VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf VSD t rr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=800V VGS=0V VGS=±30V VDS=0V ID=2A VGS=10V ID=2A VDS=25V VDS =25V V GS = 0 V f=1MHz VCC=600V RG=25 ID=4A VGS=10V IF=2xIDR VGS=0V Tch=25°C IF=IDR di/dt=100A/µs Tch=25°C
Min.
800 2.5 Tch=25°C Tch=125°C
Typ.
Max.
Units
V V µA mA nA S pF
2.0
3.5 5.0 10 500 0.2 1.0 10 100 3.0 4.5 4.0 800 1200 80 120 30 45 30 45 65 100 110 165 60 90 0.92 1.38 700
ns
V ns
Thermal characteristics
Item Thermal resistance Symbol Rth(ch-a) Rth(ch-c) Test Conditions channel to ambient channel to case
Min.
Typ.
Max.
125 2.08
Units
°C/W °C/W
3.0 ±0.3
1
FUJI POWER MOSFET
Characteristics
Typical output characteristics
2SK1552-01L,S
On state resistance vs. Tch
8
15
6 ID [A] RDS(on) 4 [] 10
5 2
0
0
10
20 VDS [ V ]
30
40
0
-50
0
50 Tch [ °C ]
100
150
Typical transfer characteristics
8 15
Typical Drain-Source on state resistance vs. ID
6 RDS(on) [ m ] ID 4 [A] 5 2 10
0
0
2
4
6 VGS [ V ]
8
10
12
0
0
2
4 ID [ A ]
6
8
10
Typical forward transconductance vs. ID
6.0 6
Gate threshold voltage vs. Tch
4.0 gfs [S] 4 V GS(th) [V] 2.0
2
0 0 2 4 ID [ A ] 6 8
0 0 50 Tch [ °C ] 100 150
2
FUJI POWER MOSFET
Typical capacitance vs. VDS
1000
2SK1552-01L,S
Typical input charge
20
1.0 0.5 C [nF] 0.1 0.05
800 15 600 VDS [V] 400 5 10 VGS [V]
200
0.01
0 0 10 20 VDS [ V ] 30 0 20 40 Qg [ nC ] 60
0
Forward characteristics of reverse diode
60 10 5 40 IF [A] PD [W] 20
Allowable power dissipation vs. Tc
1 0.5
0.1 0 0.4 VSD 0.8 [V] 1.2
0
0
50 Tc [ °C ]
100
150
Safe operating area
10
Transient thermal impedance
5
100
ID 1 [A] 0.5
Rth [°C/W] 10-1 0.1 0.05 10-2 10-5
10-4
10-3
10-2 t [ sec. ]
10-1
100
101
5
10
50
100 VDS [ V ]
500 1000
3
Others parts begin by 2s
2S-1 2S-2 2S-3 2S-4 2S-5 2S-6 2S-7 2S-8 2S-9 2S-10 2S-11 2S-12 2S-13 2S-14 2S-15 2S-16 2S-17 2S-18 2S-19 2S-20 2S-21 2S-22 2S-23 2S-24 2S-25 2S-26 2S-27 2S-28 2S-29 2S-30 2S-31 2S-32 2S-33 2S-34 2S-35 2S-36 2S-37 2S-38 2S-39 2S-40 2S-41 2S-42 2S-43 2S-44 2S-45 2S-46 2S-47 2S-48 2S-49
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