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Part: 2SK1821-01MR
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
-> N-Channel
-> High voltage
Description: N-channel MOSFET
Company: Fuji Electric Corp. of America
Datasheet: Download 2SK1821-01MR datasheet File size : 139 kB
Request For quote: Find where to buy 2SK1821-01MR
Datasheet text preview:
2SK1821-01MR
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching Low on-resistance No secondary breakdown High voltage Low driving power Avalanche-proof
FUJI POWER MOSFET
FAP-IIA SERIES
Outline Drawings
TO-220F15
Applications
Switching regulators UPS DC-DC converters General purpose power amplifier
2.54
3. Source
JEDEC EIAJ
SC-67
Maximum ratings and characteristics
Absolute maximum ratings ( Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Continuous reverse drain current Gate-source peak voltage Max. power dissipation Operating and storage temperature range Symbol VDS ID ID(puls] IDR V GS PD Tch Tstg Rating 600 2 6 2 ±25 30 +150 -55 to +150 Unit V A A A V W °C °C
Equivalent circuit schematic
Drain(D)
Gate(G) Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton (ton=td(on)+tr) Turn-off time toff (toff=td(off)+tf) Diode forward on-voltage Reverse recovery time Symbol V( B R ) D S S VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf VSD t rr Test Conditions ID=1mA VGS=0V ID=10mA VDS=VGS VDS=600V VGS=0V VGS=±25V VDS=0V ID=1A VGS=10V ID=1A VDS=25V VDS =25V V GS = 0 V f=1MHz VCC=300V RG=25 ID=2A VGS=10V IF=2xIDR VGS=0V Tch=25°C IF=IDR di/dt=100A/µs Tch=25°C
Min.
600 2.1 Tch=25°C Tch=125°C
Typ.
3.0 10 0.2 10 5.5 1.8 270 32 15 4 12 25 20 0.92 500
Max.
4.0 500 1.0 100 6.5 400 48 23 6 18 40 30 1.41
Units
V V µA mA nA S pF
1.0
ns
V ns
Thermal characteristics
Item Thermal resistance Symbol Rth(ch-a) Rth(ch-c) Test Conditions channel to ambient channel to case
Min.
Typ.
Max.
62.5 4.167
Units
°C/W °C/W
1
FUJI POWER MOSFET
Characteristics
Typical output characteristics
3 15
2SK1821-01MR
On state resistance vs. Tch
2 ID [A] 10 RDS(on) [] 1 5
0
0
10 VDS [ V ]
20
30
0
-50
0
50 Tch [ °C ]
100
150
Typical transfer characteristics
15 2.4
Typical Drain-Source on state resistance vs. ID
1.6 ID [A] 0.8
10 RDS(on) []
5
0
0
4 VGS [ V ]
8
12
0
0
1 ID [ A ]
2
3
Typical forward transconductance vs. ID
2.4
Gate threshold voltage vs. Tch
5.0
4.0 1.6 gfs [S] VGS(th)3.0 [V] 0.8 2.0
1.0
0
0 0 0.8 ID [ A ] 1.6 2.4 -50 0 50 Tch [ °C ] 100 150
2
FUJI POWER MOSFET
Typical capacitance vs. VDS
1 0.5
2SK1821-01MR
C 0.1 [nF] 0.05
0.01 0.005 0 10 20 VDS [ V ] 30
Forward characteristics of reverse diode
5 30
Allowable power dissipation vs. Tc
20 IF [A] 1 PD [W] 0.5 10
0.1 0 0.2 0.4 VSD 0.6 [V] 0.8 1.0
0 0 50 Tc [ °C ] 100 150
Safe operating area
10 5
Transient thermal impedance
100 Rth [°C/W] 10-1
1 ID [ A ] 0.5
0.1 0.05 10-2 10-5 10-4 10-3 10-2 t [ sec. ] 10-1 100 101 5 10 50 100 VDS [ V ] 500 1000
3
Others parts begin by 2s
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