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Part: 2SK1823-01R
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
Description: N-channel Silicon Power MOSFET
Company: Fuji Electric Corp. of America
Datasheet: Download 2SK1823-01R datasheet File size : 139 kB
Request For quote: Find where to buy 2SK1823-01R
Datasheet text preview:
2SK1823-01R
N-CHANNEL SILICON POWER MOSFET
Features
High current Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Including G-S Zener diode
FUJI POWER MOSFET
FAP-IIIA SERIES
Outline Drawings
15.5 ±0.3 ø3.2 ±0.2
5.5 ±0.2 9.3 ±0.3
5.5
±0.3
3.2 +0.3
2 .3 ± 0.2
2.1±0.3
1.6 ±0.3 1.1 --0.1
+0.2
20 Min
2 1 .5
±0.3
Applications
Motor controllers General purpose power amplifier DC-DC converters
5.45 ±0.2
5.45 ±0.2
0.6 +0.2
3.5 ±0.2
1. Gate 2. Drain 3. Source
JEDEC EIAJ
Maximum ratings and characteristics
Absolute maximum ratings ( Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Continuous reverse drain current Gate-source peak voltage Max. power dissipation Operating and storage temperature range Symbol VDS ID ID(puls] IDR V GS PD Tch Tstg Rating 60 50 200 50 ±20 80 +150 -55 to +150 Unit V A A A V W °C °C
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton (ton=td(on)+tr) Turn-off time toff (toff=td(off)+tf) Diode forward on-voltage Reverse recovery time Symbol V( B R ) D S S VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf VSD t rr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=60V VGS=0V VGS=±16V VDS=0V ID=25A VGS=4V ID=25A VGS=10V ID=25A VDS=25V VDS =25V V GS = 0 V f=1MHz VCC=30V RG=25 ID=50A VGS=10V IF=2xIDR VGS=0V Tch=25°C IF=IDR di/dt=100A/µs Tch=25°C
Min.
60 1.0 Tch=25°C Tch=125°C
Typ.
1.5
Max.
2.0 500 1.0 10 27 17
Units
V V µA mA µA m S pF
19 13 20.0 40.0 2600 3900 1000 1500 630 950 20 30 210 320 520 780 420 630 1.45 2.18 85 120
ns V ns
Thermal characteristics
Item Thermal resistance Symbol Rth(ch-a) Rth(ch-c) Test Conditions channel to ambient channel to case
Min.
Typ.
Max.
30 1.56
Units
°C/W °C/W
1
FUJI POWER MOSFET
Characteristics
Typical output characteristics
100 80 80 60 ID [A] 60 RDS(on) [ m ] 40 40
2SK1823-01R
On state resistance vs. Tch
20
20
0
0
5
10 VDS [ V ]
15
20
0
-50
0
50 Tch [ °C ]
100
150
Typical transfer characteristics
200 60 150 RDS(on) 40 ID [A] [ m ] 100
Typical Drain-Source on state resistance vs. ID
20
50
0
0
2 VGS
4 [V]
6
0
0
50
100 ID [ A ]
150
200
Typical forward transconductance vs. ID
40
Gate threshold voltage vs. Tch
3.0
30 2.0 gfs [S] 20 V GS(th) [V] 1.0 10
0
0 0 20 40 ID [ A ] 60 80 -50 0 50 Tch [ °C ] 100 150
2
FUJI POWER MOSFET
Typical capacitance vs. VDS
2SK1823-01R
Typical input charge
50 25
40 10 5 C [nF] 1 0.5 10 VDS 30 [V]
20
15 VGS [V] 10
20
5
0.1
0 0 10 VDS [ V ] 20 30
0
50
100
150
200
0 250
Qg [ nC ]
Forward characteristics of reverse diode
100
Allowable power dissipation vs. Tc
100 50
80
60 IF [A] 10 5 20 PD [W] 40
1
0
1.0 VSD [ V ]
1.5
3.0
0
0
50 Tc [ °C ]
100
150
Safe operating area
300
Transient thermal impedance
100
100 50 ID [A]
Rth -1 [°C/W] 10
10 5
10-2 10-5 10-4 10-3 10-2 t [ sec. ] 10-1 100 101 1 0.5 1 5 10 VDS [ V ] 50 100
3
Others parts begin by 2s
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