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Part: 2SK2021-01
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
Description: N-channel MOS-FET
Company: Fuji Electric Corp. of America
Datasheet: Download 2SK2021-01 datasheet File size : 34 kB
Request For quote: Find where to buy 2SK2021-01
Datasheet text preview:
FAP-IIA Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof
2SK2021-01
N-channel MOS-FET
500V
1,6
5A
60W
> Outline Drawing
> Applications
Switching Regulators UPS DC-DC converters General Purpose Power Amplifier
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20K) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 500 500 5 20 ±30 60 150 -55 ~ +150 Unit V V A A V W °C °C
> Equivalent Circuit
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Continous Reverse Drain Current Pulsed Reverse Drain Current Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t I I I V t Q
GSS DS(on) fs iss oss rss d(on) r d(off) f AV DR DRM SD rr rr
Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=500V Tch=25°C VGS=0V Tch=125°C VGS=±30V VDS=0V ID=2,5A VGS=10V ID=2,5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=5A VGS=10V RGS=10 Tch=25°C L = 100µH
Min. 500 2,5
Typ. 3,0 10 0,2 10 1,2 4 1000 85 20 20 15 45 20
Max. 3,5 500 1,0 100 1,6 1500 130 30 30 25 70 30 5 20 1,65
2
5
IF=2xIDR VGS=0V Tch=25°C IF=IDR VGS=0V -dIF/dt=100A/µs Tch=25°C
1,1 400 2
Unit V V µA mA nA S pF pF pF ns ns ns ns A A A V ns µC
- Thermal Characteristics Item Thermal Resistance
Symbol R th(ch-a) R th(ch-c)
Test conditions channel to air channel to case
Min.
Typ.
Max. 75 2,08
Unit °C/W °C/W
Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com
N-channel MOS-FET
500V
1,6
5A
60W
FAP-IIA Series
2SK2021-01
Drain-Source-On-State Resistance vs. Tch Typical Transfer Characteristics
> Characteristics
Typical Output Characteristics
ID [A]
1
RDS(ON) []
2
ID [A]
3
VDS [V]
Tch [°C]
VGS [V]
Typical Drain-Source-On-State-Resistance vs. ID
Typical Forward Transconductance vs. ID
Gate Threshold Voltage vs. Tch
RDS(ON) []
4
gfs [S]
5
VGS(th) [V]
6
ID [A]
ID [A]
Tch [°C]
Typical Capacitance vs. VDS
Typical Input Charge
Forward Characteristics of Reverse Diode
C [nF]
7
VDS [V]
8
VGS [V]
IF [A]
9
VDS [V]
Qg [nC]
VSD [V]
Allowable Power Dissipation vs. TC
Safe operation area
Zth(ch-c) [K/W]
Transient Thermal impedance
PD [W]
10
ID [A]
12
11
Tc [°C]
VDS [V]
t [s]
This specification is subject to change without notice!
Others parts begin by 2s
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