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Part: 2SK2025-01
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
Description: N-channel MOSFET
Company: Fuji Electric Corp. of America
Datasheet: Download 2SK2025-01 datasheet File size : 164 kB
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Datasheet text preview:
2SK2025-01
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof
FUJI POWER MOSFET
FAP-IIA SERIES
Outline Drawings
TO-220AB
Applications
Switching regulators UPS DC-DC converters General purpose power amplifier
3 . Source
JEDEC EIAJ
TO-220AB SC-46
Maximum ratings and characteristics
Absolute maximum ratings ( Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Continuous reverse drain current Gate-source peak voltage Max. power dissipation Operating and storage temperature range Symbol VDS ID ID(puls] IDR V GS PD Tch Tstg Rating 600 4 16 4 ±30 60 +150 -55 to +150 Unit V A A A V W °C °C
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton (ton=td(on)+tr) Turn-off time toff (toff=td(off)+tf) Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V( B R ) D S S V GS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV VSD t rr Qr r Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=600V VGS=0V VGS=±30V VDS=0V ID=2A VGS=10V ID=2A VDS=25V VDS =25V V GS = 0 V f=1MHz VCC=300V RG=10 ID=4A VGS=10V L=100µH Tch=25°C IF=2xIDR VGS=0V Tch=25°C IF=IDR VGS=0V -di/dt=100A/µs Tch=25°C
Min.
600 2.5 Tch=25°C Tch=125°C
Typ.
Max.
3.5 500 1.0 100 2.4 1500 130 30 30 25 70 25 1.65
Units
V V µA mA nA S pF
3.0 10 0.2 10 2.0 2.0 4.0 1000 85 20 20 15 45 15 4 1.1 400 2
ns A V ns µC
Thermal characteristics
Item Thermal resistance Symbol Rth(ch-a) Rth(ch-c) Test Conditions channel to ambient channel to case
Min.
Typ.
Max.
75.0 2.08
Units
°C/W °C/W
1
FUJI POWER MOSFET
Characteristics
Typical output characteristics
8 10 6
2SK2025-01
On state resistance vs. Tch
8 ID [A] RDS(on) 6 []
4
4 2 2
0 0 10 VDS 20 [V] 30
0 -50
0
50 Tch [ °C ]
100
150
Typical transfer characteristics
10 8
Typical Drain-Source on state resistance vs. ID
8 6 6 ID [A] 4 2
RDS(on) [] 4
2
0 0 2 4 VGS 6 [V] 8 10
0
0
2 ID [ A ]
4
6
Typical forward transconductance vs. ID
10 5.0
Gate threshold voltage vs. Tch
8
4.0
6 gfs [S] 4
3.0 V GS(th) [V] 2.0
2
1.0
0
0
2
4 ID [ A ]
6
8
10
0 -50
0
50 Tch [ °C ]
100
150
2
FUJI POWER MOSFET
Typical capacitance vs. VDS
101
2SK2025-01
Typical input charge
400 100 C [nF]
20
VDS [V]
VGS [V] 200 10
10-1
10-2
0
10
20 VDS [ V ]
30
40
0
0
20 Qg [ nC ]
40
0
Forward characteristics of reverse diode
80 10
1
Allowable power dissipation vs. Tc
60 100 IF [A] PD 40 [W] 10-1 20
10-2 0
0.5 VSD
1.0 [V]
1.5
0
0
50 Tc [ °C ]
100
150
Safe operating area
102
Transient thermal impedance
101 100 Rth [°C/W] 10-1 10-1 ID [A] 100
10-2 10-5
10-4
10-3
10-2 t [ sec. ]
10-1
100
101
10-2 100
101
102 VDS [ V ]
103
3
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