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Part: 2SK2213-01S
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
Description:
Company: Fuji Electric Corp. of America
Datasheet: Download 2SK2213-01S datasheet File size : 35 kB
Request For quote: Find where to buy 2SK2213-01S
Datasheet text preview:
2SK2213-01L,S
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof
FUJI POWER MOSFET
FAP-IIA SERIES
Outline Drawings
10 +0.5
0.9 ±0.3
4.5 ±0.2 1.32
9.3 ±0.5
1.5 Max
1.2 ±0.2 5.08
0.8 --0.1 2.7
+0.2
0.4 +0.2
Applications
Switching regulators UPS DC-DC converters General purpose power amplifier
EIAJ
1. Gate 2, 4. Drain 3. Source
1 . Gate 2 , 4. Drain 3 . Source
L-type
S-type
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Continuous reverse drain current Gate-source peak voltage Max. power dissipation Operating and storage temperature range Symbol VDS ID ID(puls] IDR V GS PD Tch Tstg Rating 500 10 40 10 ±30 80 +150 -55 to +150 Unit V A A A V W °C °C
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton (ton=td(on)+tr) Turn-off time toff (toff=td(off)+tf) Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V( B R ) D S S V GS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV VSD t rr Qr r Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=500V VGS=0V VGS=±30V VDS=0V ID=5A VGS=10V ID=5A VDS=25V VDS =25V V GS = 0 V f=1MHz VCC=300V RG=10 ID=10A VGS=10V L=100µH Tch=25°C
Min.
500 2.5 Tch=25°C Tch=125°C
Typ.
Max.
Units
V V µA mA nA S pF
IF=2xIDR VGS=0V Tch=25°C IF=IDR VGS=0V -di/dt=100A/µs Tch=25°C
3.0 3.5 10 500 0.2 1.0 10 100 0.6 0.76 5.0 10.0 1500 2200 160 240 35 50 15 25 40 60 70 100 60 90 10 1.12 1.70 450 3
ns A V ns µC
Thermal characteristics
Item Thermal resistance Symbol Rth(ch-a) Rth(ch-c) Test Conditions channel to ambient channel to case
Min.
Typ.
Max.
125 1.56
Units
°C/W °C/W
3.0 ±0.3
1
FUJI POWER MOSFET
Characteristics
Typical output characteristics
20 2.0
2SK2213-01L,S
On state resistance vs. Tch
ID [ A ] 10
RDS(on) 1.0 []
0 0 10 VDS [ V ] 20
0 -50
0
50 Tch [ °C ]
100
150
Typical transfer characteristics
20 5
Typical Drain-Source on state resistance vs. ID
4
ID 10 [A]
3 RDS(on) [] 2
1
0 0 2 4 6 VGS [ V ] 8 10
0
0
10 ID [ A ]
20
20
Typical forward transconductance vs. ID
Gate threshold voltage vs. Tch
5
4
3 gfs 10 [S] V GS(th) [V]
2
1
0 0 10 ID [ A ] 20
0 -50
0
50 Tch [ °C ]
100
150
2
FUJI POWER MOSFET
Typical capacitance vs. VDS
101 500
2SK2213-01L,S
Typical input charge
25
400 100 C [nF] VDS [ V ] 300
20
15 VGS [V] 10
200 10-1 100
5
10-2
0
10
20 VDS [ V ]
30
40
0
0
20
40 Qg [ nC ]
60
80
0
Forward characteristics of reverse diode
10
2
Allowable power dissipation vs. Tc
100
80 101 60 IF [A] 100 20 PD [W] 40
10-1 0
0.5 VSD [ V ]
1.0
1.5
0
0
50 Tc [ °C ]
100
150
Safe operating area
102
Transient thermal impedance
100 Rth [°C/W] 10-1
101 ID [A]
100
10-2 10-5
10-4
10-3
10-2 t [ sec. ]
10-1
100
101
10-1 0 10
101
102 VDS [ V ]
103
3
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