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Part: 2SK3216-01
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
Description: N-channel Silicon Power MOSFET
Company: Fuji Electric Corp. of America
Datasheet: Download 2SK3216-01 datasheet File size : 135 kB
Request For quote: Find where to buy 2SK3216-01
Datasheet text preview:
2SK3216-01
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
FUJI POWER MOS-FET
TO-220AB
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
3 . Source
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Drain-source voltage VDS Continuous drain current ID Pulsed drain current ID(puls] Gate-source voltage V GS Maximum Avalanche Energy EAV *1 Max. power dissipation Ta=25°C PD Tc=25°C PD Operating and storage Tch temperature range Tstg Rating 100 ±50 ±200 ±30 464 1.67 135 +150 -55 to +150 Unit V A A V mJ W W °C °C
Equivalent circuit schematic
Drain(D)
Gate(G) Source(S)
*1 L=298µH, Vcc=24V
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV VSD trr Qr r Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS V D S= 1 0 0 V VGS=0V VGS=±30V VDS=0V ID=25A VGS=10V ID=25A VDS=25V VDS =25V V GS = 0 V f=1MHz VCC=48V ID=50A VGS=10V RGS=10 L=100µH Tch=25°C IF=50A VGS=0V Tch=25°C IF=50A VGS=0V -di/dt=100A/µs Tch=25°C 50 0.97 150 0.80 1.46
Min.
100 2.5 Tch=25°C Tch=125°C
Typ.
3.0 1 0.1 10 20 32.0 3200 760 230 23 130 110 65
Max.
3.5 100 0.5 100 25 4800 1140 345 35 195 165 100
Units
V V µA mA nA m S pF
16.0
ns A V ns µC
Thermalcharacteristics
Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient
Min.
Typ.
Max.
0.93 75.0
Units
°C/W °C/W
1
2SK3216-01
Characteristics
Power Dissipation PD=f(Tc)
150 10
FUJI POWER MOSFET
Safe operating area ID=f(VDS):Single Pulse(D=0),Tc=25°C
3
t= 125 10 100 D.C.
2
1µs 10µs
100µs
PD [W]
ID [A]
75
10
1
1ms
10ms 100ms 10
0
50
t D= T t T
25
0 0 25 50 75 100 125 150
10
-1
10
-1
10
0
10
1
10
2
10
3
Tc [°C]
VDS [V]
Typical output characteristics ID=f(VDS):80µs pulse test,Tc=25°C
125 VGS=20V 15V 10V 7.0V 100 6.5V 100
Typical transfer characteristics ID=f(VGS):80µs pulse test,VDS=25V,Tch=25°C
75
ID [A]
6.0V
ID [A]
5
10
50 5.5V 1 25 5.0V
4.5V 0 0.1
0
1
2
3
4
0
2
4
6
8
10
VDS [V]
VGS [V]
Typical forward transconductance gfs=f(ID):80µs pulse test,VDS=25V,Tch=25°C
10
2
Typical Drain-Source on-State Resistance RDS(on)=f(ID):80µs pulse test,Tch=25°C
0.08 VGS= 4.5V 0.07 5.0V 5.5V 6.0V
0.06 10
1
0.05
RDS(on) [ ]
6.5V
gfs [s]
0.04 7.0V 0.03
10
0
0.02
10V 15V 20V
0.01
10
-1
0.00 10
-1
10
0
10
1
10
2
0
20
40
60
80
100
120
ID [A]
ID [A]
2
2SK3216-01
Drain-source on-state resistance RDS(on)=f(Tch):ID=25A,VGS=10V
80 5.0 4.5 4.0 60 3.5 50
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA
70
max. 3.0
RDS(on)[m ]
VGS(th) [V]
typ. 2.5 2.0 1.5 min.
40 max. 30 typ. 20
1.0 10 0.5 0.0 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
0
Tch [°C]
Tch [°C]
Typical capacitances C=f(VDS):VGS=0V,f=1MHz
100n 100 90
Typical Gate Charge Characteristics VGS=f(Qg):ID=50A,Tch=25°C
25
VDS 80 70 10n Vcc=80V 60
VGS
20
15
VGS [V]
VDS [V]
C [F]
50V 20V
50 40 10
Ciss
1n Coss 30 20 Crss 10 100p 10 0 0 20 40 60 80 100 120 140 160 0 5
-2
10
-1
10
0
10
1
10
2
VDS [V]
Qg [nC]
Typical Forward Characteristics of Reverse Diode -ID=f(VSD):80µs pulse test,Tch=25°C
100 90 80 70 10 60
3
Typical Switching Characteristics vs. ID t=f(ID):Vcc=48V,VGS=10V,RG=10
10
4
-ID [A]
50 40
t [ns]
td(off)
2
10 30 20 10V 10 0 0.0 5V VGS=0V
tf tr td(on) 10 -1 10
1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10
0
10
1
10
2
VSD [V]
ID [A]
3
2SK3216-01
Maximum Avalanche Current vs. starting Tch I(AV)=f(starting Tch),Non Repetitive
70
FUJI POWER MOSFET
Transient Thermal Impedance Zth(ch-c)=f(t):D=t/T
10
1
60
10
50
0
D=0.5
Zth(ch-c) [°C/W]
0.2 10
-1
0.1 0.05 0.02
40 I(AV) [A]
30
10
20
-2
0.01 0
t D= T t T
10
1 0 -6 10
-3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t [sec]
0 0 25 50 75 100 125 150
Starting Tch [°C]
Maximum Avalanche energy vs. starting Tch Eas=f(starting Tch):Vcc=24V,IV<=50A,Non-Repetitive A
600
500
400
Eas [mJ]
300
200
100
0 0 25 50 75 100 125 150
Starting Tch [°C]
4
Others parts begin by 2s
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