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Part: 2SK3676-01S
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
-> N-Channel
-> High voltage
Description:
Company: Fuji Electric Corp. of America
Datasheet: Download 2SK3676-01S datasheet File size : 207 kB
Request For quote: Find where to buy 2SK3676-01S
Datasheet text preview:
2SK3676-01L,S,SJ
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
200304
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
P4
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol VDS VDSX *5 ID ID(puls] VG S IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C Tch Tstg Ratings 900 900 ±6 ±24 ±30 6 244 40 5 1.67 195 +150 -55 to +150 Unit V V A A V A mJ kV/ µ s kV/ µ s W °C °C
Equivalent circuit schematic
Drain(D)
Gate(G) Source(S)
*1 L=12.4mH, Vcc=90V,Tch=25°C, See to Avalanche Energy Graph < < < *4 VDS < 900V *3 IF=-ID, -di/dt=50A/µs, Vcc=BVDSS, Tch=150°C =
< *2 Tch=150°C *5 VGS=-30V
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS V GS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD t rr Qr r Test Conditions ID=250µA VGS=0V ID= 250µA VDS=VGS VDS=900V VGS=0V Tch=25°C VDS=720V VGS=0V Tch=125°C VGS=±30V VDS=0V ID=3A VGS=10V ID=3A VDS=25V VDS =25V VG S = 0 V f=1MHz VCC=600V ID=3A V GS = 1 0 V RGS=10 VCC = 4 5 0 V ID=6A VG S = 1 0 V L=12.4mH Tch=25°C IF=6A VGS=0V Tch=25°C IF=6A VGS=0V -di/dt=100A/µs Tch=25°C
Min.
900 3.0
Typ.
Max.
5.0 25 250 100 2.50 1125 150 11 32 12 63 16.5 32 4.5 10.5 1.50
Units
V V µA nA S pF
3.7
1.92 7.4 750 100 7 21 8.0 42 11 25 3 7 0.90 1.1 5.5
ns
nC
6
A V µs µC
Thermalcharacteristics
Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient
Min.
Typ.
Max.
0.640 75.0
Units
°C/W °C/W
1
2SK3676-01L,S,SJ
Characteristics
Allowable Power Dissipation PD=f(Tc)
8 2 00 6
FUJI POWER MOSFET
2 50
Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25°C
20V 10V 8. 0V 7. 0V
6. 5V
6. 0V
PD [W]
ID [A]
1 50
4
1 00
50
2
VGS=5.5V
0 0 25 50 75 1 00 1 25 1 50
0 0 5 10 15 20
Tc [°C]
VDS [V]
Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C
10 10
Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C
ID[A]
1
gfs [S]
1
0. 1
0
1
2
3
4
5
6
7
8
9
10
0. 1
1
10
VGS[V]
ID [A]
2. 6 2. 5 2. 4
Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25°C
V G S = 5. 5V 6. 0V 6. 5V 7. 0V 8. 0V 10 V 20 V
7
Drain-Source On-state Resistance RDS(on)=f(Tch):ID=3A,VGS=10V
6
5
RDS(on) [ ]
RDS(on) [ ]
2. 3 2. 2 2. 1 2. 0 1. 9 1. 8 0 2 4 6 8 10
4 max.
3
2
typ.
1
0 - 50 - 25 0 25 50 75 100 125 150
ID [A]
Tch [°C]
2
2SK3676-01L,S,SJ
FUJI POWER MOSFET
7. 0 6. 5 6. 0 5. 5 5. 0
Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µ A
14
Typical Gate Charge Characteristics VGS=f(Qg):ID=6A,Tch=25°C
12 Vcc= 180V max. 4 50V 10 7 20V
VGS(th) [V]
4. 5
3. 5 3. 0 2. 5 2. 0 1. 5 1. 0 0. 5 0. 0 - 50 - 25 0 25 50 75 100 125 150 m i n.
VGS [V]
4. 0
8
6
4
2
0 0 5 10 15 20 25 30 35
Tch [°C]
Qg [nC]
10
1
Typical Capacitance C=f(VDS):VGS=0V,f=1MHz
Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25°C
10
0
C is s
10
C [nF]
10
-1
C os s
IF [A]
1 0. 1 0. 00
10
-2
C rss
10
-3
10
0
10
1
10
2
0. 25
0. 50
0. 75
1. 00
1. 25
1. 50
VDS [V]
VSD [V]
10
3
Typical Switching Characteristics vs. ID t=f(ID):Vcc=600V,VGS=10V,RG=10
800
Maximum Avalanche Energy vs. starting Tch E(AS)=f(starting Tch):Vcc=90V
IAS=2A
tf 600 10
2
td(of f)
EAS [mJ]
t [ns]
400
IAS=4A
td(on) 10
1
IAS=6A tr 200
10
0
0
-1
10
10
0
10
1
0
25
50
75
100
125
150
ID [A]
starting Tch [°C]
3
2SK3676-01L,S,SJ
Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=90V
FUJI POWER MOSFET
10
2
Avalanche Current I AV [A]
10
1
Single Pulse
10
0
10
-1
10 -8 10
-2
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
tAV [sec]
10
1
Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0
10
0
Zth(ch-c) [°C/W]
10
-1
10
-2
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t [sec]
Outline Drawings (mm)
Type(L) Type(S) Type(SJ)
4
1
23
1 42 3
1
23
1 2 3
http://www.fujielectric.co.jp/denshi/scd/
4
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