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Part: 2SK3678-01
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
-> N-Channel
-> High voltage
Description:
Company: Fuji Electric Corp. of America
Datasheet: Download 2SK3678-01 datasheet File size : 207 kB
Request For quote: Find where to buy 2SK3678-01
Datasheet text preview:
2SK3678-01
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220AB
200304
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol Ratings VDS 900 VDSX *5 900 ID ±9 ID(puls] ±36 VG S ±30 IAR *2 9 EAS *1 287.7 dVDS/dt *4 40 dV/dt *3 5 PD Ta=25°C 2.02 Tc=25°C 270 Tch Tstg +150 -55 to +150 Unit V V A A V A mJ kV/ µ s kV/ µ s W °C °C *2 Tch <150°C = *5 VGS=-30V
Equivalent circuit schematic
Drain(D)
Gate(G) Source(S)
*1 L=6.51mH, Vcc=90V, Tch=25°C See to Avalanche Energy Graph *3 IF< -ID, -di/dt=50A/µs, Vcc < BVDSS, Tch < 150°C *4 VDS< 900V = = = =
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD t rr Qr r Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=900V VGS=0V Tch=25°C VDS=720V VGS=0V Tch=125°C VGS=±30V VDS=0V ID=4.5A VGS=10V ID =4.5A VDS=25V VDS =25V V GS = 0 V f=1MHz VCC=600V ID=4.5A V GS = 1 0 V RGS=10 V C C= 4 5 0 V ID=9A V GS = 1 0 V L=6.51mH Tch=25°C IF=9A VGS=0V Tch=25°C IF=9A VGS=0V -di/dt=100A/µs Tch=25°C Test Conditions channel to case channel to ambient
Min.
900 3.0
Typ.
Max.
5.0 25 250 100 1.58
Units
V V µA nA S pF
5
1.22 10 1100 1650 140 210 8 12 25 38 12 18 50 75 12 18 31 46.5 4.5 8 11 16.5 0.90 3.2 15.5
ns
nC
9 1.50
A V µs µC
Thermalcharacteristics
Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a)
Min.
Typ.
Max.
0.463 62.0
Units
°C/W °C/W
1
2SK3678-01
Characteristics
Allowable Power Dissipation PD=f(Tc)
FUJI POWER MOSFET
30 0
14
Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25°C
20V 10V 8.0V 7.0V 6.5V
25 0
12
10 20 0
PD [W]
15 0
ID [A]
8
6 10 0
6.0V
4
50
2
VG S=5.5V
0 0 25 50 75 10 0 12 5 15 0
0 0 5 10 15 20
Tc [°C]
VDS [V]
Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C
10 10
Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C
ID[A]
1
gfs [S]
1
0.1
0
1
2
3
4
5
6
7
8
9
10
0. 1
1
10
VGS[V]
ID [A]
1. 7
Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25°C
V G S = 5. 5V 6. 0V 6. 5V 7. 0V 8. 0V 10V 20V
5
Drain-Source On-state Resistance RDS(on)=f(Tch):ID=4.5A,VGS=10V
1. 6
4
RDS(on) [ ]
1. 5
RDS(on) [ ]
3
1. 4
2
max. typ.
1. 3
1. 2
1
1. 1 0 2 4 6 8 10 12 14
0 - 50 - 25 0 25 50 75 100 125 150
ID [A]
Tch [°C]
2
2SK3678-01
FUJI POWER MOSFET
7.0 6.5 6.0 5.5 5.0
Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µ A
14
Typical Gate Charge Characteristics VGS=f(Qg):ID=9A,Tch=25°C
12 Vcc= 180V 4 50V 7 20V
m a x.
10
VGS(th) [V]
4.5
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -5 0 -2 5 0 25 50 75 100 125 150 m in .
VGS [V]
4.0
8
6
4
2
0 0 5 10 15 20 25 30 35 40 45
Tch [°C]
Qg [nC]
10
1
Typical Capacitance C=f(VDS):VGS=0V,f=1MHz
Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25°C
10
0
C is s
10
C [nF]
10
-1
C os s
IF [A]
1 0.1 0.00
10
-2
C rs s
10
-3
10
0
10
1
10
2
0.25
0.50
0.75
1.00
1.25
1.50
VDS [V]
VSD [V]
10
3
Typical Switching Characteristics vs. ID t=f(ID):Vcc=600V,VGS=10V,RG=10
7 00
Maximum Avalanche Energy vs. starting Tch E(AS)=f(starting Tch):Vcc=90V
IAS=4A
6 00 tf 5 00 10
2
td(of f)
IAS=6A
EAS [mJ]
4 00
t [ns]
td(on) 10
1
3 00
IAS=9A
2 00 tr 1 00
10
0
0
-1
10
10
0
10
1
0
25
50
75
1 00
1 25
1 50
ID [A]
starting Tch [°C]
3
2SK3678-01
FUJI POWER MOSFET
10
2
Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=90V
Avalanche Current I AV [A]
10
1
Single Pulse
10
0
10
-1
10 -8 10
-2
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
tAV [sec]
10
1
Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0
10
0
Zth(ch-c) [°C/W]
10
-1
10
-2
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t [sec]
http://www.fujielectric.co.jp/denshi/scd/
4
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