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Part: 2SK3692-01
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
-> N-Channel
-> High voltage
Description:
Company: Fuji Electric Corp. of America
Datasheet: Download 2SK3692-01 datasheet File size : 250 kB
Request For quote: Find where to buy 2SK3692-01
Datasheet text preview:
2SK3692-01
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220AB
200305
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol Ratings VDS 450 VDSX *5 450 ID ±17 ID(puls] ±68 VG S ±30 IAR *2 17 EAS *1 221.9 dVDS/dt *4 20 dV/dt *3 5 PD Ta=25°C 2.02 Tc=25°C 225 Tch Tstg +150 -55 to +150 Unit V V A A V A mJ kV/ µ s kV/ µ s W °C °C *2 Tch <150°C = *5 VGS=-30V
Equivalent circuit schematic
Drain(D)
Gate(G) Source(S)
*1 L=1.41mH, Vcc=45V, Tch=25°C See to Avalanche Energy Graph *3 IF< -ID, -di/dt=50A/µs, Vcc < BVDSS, Tch < 150°C *4 VDS< 450V = = = =
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD t rr Qr r Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=450V VGS=0V Tch=25°C Tch=125°C VDS=360V VGS=0V VGS=±30V VDS=0V ID=8.5A VGS=10V ID =8.5A VDS=25V VDS =25V V GS = 0 V f=1MHz VCC=300V ID=8.5A V GS = 1 0 V RGS=10 V C C= 2 2 5 V ID=17A V GS = 1 0 V L=1.41mH Tch=25°C IF=17A VGS=0V Tch=25°C IF=17A VGS=0V -di/dt=100A/µs Tch=25°C
Min.
450 3.0
Typ.
Max.
5.0 25 250 100 0.38
Units
V V µA nA S pF
7
0.29 14 1275 1900 200 300 9.5 14 27 40 27 40 48 72 7 11 33 50 13.5 13 10.5 16 1.20 0.57 6.5
ns
nC
17 1.80
A V µs µC
Thermalcharacteristics
Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient
Min.
Typ.
Max.
0.556 62.0
Units
°C/W °C/W
1
2SK3692-01
Characteristics
Allowable Power Dissipation PD=f(Tc)
30 2 50 25 2 00
FUJI POWER MOSFET
3 00
Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 °C
20 V 10 V
8V
PD [W]
1 50
ID [A]
20
15
7. 5V
1 00
10 7. 0V
50
5 V G S = 6. 5V
0 0 25 50 75 1 00 1 25 1 50
0 0 4 8 12 16 20
Tc [°C]
VDS [V]
Typical Transfer Characteristic ID=f(VG S):80 µs pulse test,VDS=25V,Tch=25°C
Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C
10 10
ID[A]
1
gfs [S]
1 0 1 2 3 4 5 6 7 8 9 10
0 .1
0. 1
1
10
V GS[V]
ID [A]
0. 9
Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25°C
VGS=6.5V 7.0V
1. 0 0. 9
Drain-Source On-state Resistance RDS(on)=f(Tch):ID=8.5A,VGS=10V
0. 8
7. 5V
0. 8 0. 7
0. 7
RDS(on) [ ]
RDS(on) [ ]
8V 0. 6
0. 6 0. 5 0. 4 0. 3 0. 2 typ.
max.
0. 5
10V 20V
0. 4
0. 3
0. 1 0. 0 0 5 10 15 20 25 30 35 - 50 - 25 0 25 50 75 100 125 150
0. 2
ID [A]
Tch [°C]
2
2SK3692-01
FUJI POWER MOSFET
7. 0 6. 5 6. 0 5. 5 5. 0
Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA
14
Typical Gate Charge Characteristics VGS=f(Qg):ID=17A,Tch=25°C
12 max. Vcc= 90V 2 25V 3 60V
10
VGS(th) [V]
4. 5
3. 5 3. 0 2. 5 2. 0 1. 5 1. 0 0. 5 0. 0 - 50 - 25 0 25 50 75 100 125 150 m i n.
VGS [V]
4. 0
8
6
4
2
0 0 5 10 15 20 25 30 35 40 45 50
Tch [°C]
Qg [nC]
10
1
Typical Capacitance C=f(VDS):VGS=0V,f=1MHz
Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25°C
10
0
C i ss
10
C [nF]
10
-1
C o ss
IF [A]
1
3
10
-2
C rs s
10
-3
10
-1
10
0
10
1
10
2
10
0. 1 0. 00
0. 25
0. 50
0. 75
1. 00
1. 25
1. 50
1. 75
2. 00
VDS [V]
VSD [V]
10
3
Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10
tf
60 0
Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=45V
IAS=7A
50 0
10
2
td(of f)
40 0 IAS=11A
EAS [mJ]
t [ns]
30 0 IAS=17A 20 0
td(on) 10
1
tr 10 0
10
0
0 10
-1
10
0
10
1
0
25
50
75
10 0
12 5
15 0
ID [A]
starting Tch [°C]
3
2SK3692-01
FUJI POWER MOSFET
10
2
Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=45V
Single Pulse
Avalanche Current I AV [A]
10
1
10
0
10
-1
10 -8 10
-2
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
tAV [sec]
10
1
Maxim um Transient Thermal Impedance Zth(ch-c)=f(t):D=0
10
0
Zth(ch-c) [°C/W]
10
-1
10
-2
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t [sec]
http://www.fujielectric.co.jp/denshi/scd/
4
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