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Part: 2SK3727-01
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
-> N-Channel
-> High voltage
Description:
Company: Fuji Electric Corp. of America
Datasheet: Download 2SK3727-01 datasheet File size : 231 kB
Request For quote: Find where to buy 2SK3727-01
Datasheet text preview:
2SK3727-01
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220AB
200305
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol Ratings VDS 900 VDSX *5 900 ID ±2.2 ID(puls] ±8.8 VG S ±30 IAR *2 2.2 EAS *1 127.2 dVDS/dt *4 40 dV/dt *3 5 PD Ta=25°C 2.02 Tc=25°C 75 Tch Tstg +150 -55 to +150 Unit V V A A V A mJ kV/ µ s kV/ µ s W °C °C
Equivalent circuit schematic
Drain(D)
Gate(G) Source(S)
*1 L=48.2mH, Vcc=90V, Tch=25°C See to Avalanche Energy Graph *2 Tch <150°C = *3 IF< -ID, -di/dt=50A/µs, Vcc < BVDSS, Tch < 150°C *4 VDS< 900V *5 VGS=-30V = = = =
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD t rr Qr r Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=900V VGS=0V Tch=25°C Tch=125°C VDS=720V VGS=0V VGS=±30V VDS=0V ID=1.1A VGS=10V ID =1.1A VDS=25V VDS =25V VG S = 0 V f=1MHz VCC=600V ID=1.1A V GS = 1 0 V RGS=10 VCC = 4 5 0 V ID=2.2A VG S = 1 0 V L=48.2mH Tch=25°C IF=2.2A VGS=0V Tch=25°C IF=2.2A VGS=0V -di/dt=100A/µs Tch=25°C
Min.
900 3.0
Typ.
Max.
5.0 25 250 100 8.00 375 55 3.3 26 9 39 42 12.5 5.1 3.3 1.50
Units
V V µA nA S pF
1.1
6.15 2.2 250 36 2.2 17 6 26 28 8.3 3.4 2.2 0.90 0.8 2.2
ns
nC
2.2
A V µs µC
Thermalcharacteristics
Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient
Min.
Typ.
Max.
1.667 62.0
Units
°C/W °C/W
1
2SK3727-01
Characteristics
Allowable Power Dissipation PD=f(Tc)
2. 5 80 2. 0 60
FUJI POWER MOSFET
1 00
Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25°C
20V 10V 7. 0V 6. 5V
6. 0V
ID [A]
40
PD [W]
1. 5
1. 0
20
VGS=5.5V 0. 5
0 0 25 50 75 1 00 1 25 1 50
0. 0 0 5 10 15 20
Tc [°C]
VDS [V]
10
Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C
10
Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C
ID[A]
1
gfs [S]
0. 1
1
0
1
2
3
4
5
6
7
8
9
10
0. 1
1
10
VGS[V]
ID [A]
8.5
Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25°C
VG S=5.5V 6.0V 6.5V
25. 0 22. 5 20. 0 17. 5
Drain-Source On-state Resistance RDS(on)=f(Tch):ID=1.1A,VGS=10V
8.0
7.0V 10V 20V
RDS(on) [ ]
RDS(on) [ ]
7.5
15. 0 12. 5 10. 0 7. 5 5. 0 2. 5 max. typ.
7.0
6.5
6.0
5.5 0.0
0. 0 0.5 1.0 1.5 2.0 2.5 3.0 - 50 - 25 0 25 50 75 100 125 150
ID [A]
Tch [°C]
2
2SK3727-01
FUJI POWER MOSFET
7.0 6.5 6.0 5.5 5.0
Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µA
14
Typical Gate Charge Characteristics VGS=f(Qg):ID=2.2A,Tch=25°C
Vcc= 180V 4 50V 7 20V
12
m a x.
10
VGS(th) [V]
4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -5 0 -2 5 0 25 50 75 100 125 150 0 0 2 4 6 8 10 12 14 2 4 m in .
VGS [V]
8
6
Tch [°C]
Qg [nC]
Typical Capacitance C=f(VDS):VGS=0V,f=1MHz
10
0
10
Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25°C
C i ss
10
-1
C [nF]
C o ss 10
-2
C rss 10
-3
IF [A]
1
0.1
10
0
10
1
10
2
0.00
0.25
0.50
0.75
1.00
1.25
1.50
VDS [V]
VSD [V]
10
3
Typical Switching Characteristics vs. ID t=f(ID):Vcc=600V,VGS=10V,RG=10
30 0
Maximum Avalanche Energy vs. starting Tch E(AS)=f(starting Tch):Vcc=90V
IAS=1.0A
25 0 tf 10
2
20 0 td(of f)
IAS=1.4A
EAS [mJ]
0
t [ns]
15 0
td(on) 10
1
IAS=2.2A
10 0 tr 50
10
0
10
-1
0 0 25 50 75 10 0 12 5 15 0
10
ID [A]
starting Tch [°C]
3
2SK3727-01
FUJI POWER MOSFET
10
2
Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=90V
Avalanche Current I AV [A]
10
1
Single Pulse
10
0
10
-1
10 -8 10
-2
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
tAV [sec]
10
1
Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0
10
0
Zth(ch-c) [°C/W]
10
-1
10
-2
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t [sec]
http://www.fujielectric.co.jp/denshi/scd/
4
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