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Part: 6MBI100S-120-01
Category:
Discrete
-> IGBTs (Insulated Gate Bipolar Transistors)
Description: Igbt Module
Company: Fuji Electric Corp. of America
Datasheet: Download 6MBI100S-120-01 datasheet File size : 126 kB
Request For quote: Find where to buy 6MBI100S-120-01
Datasheet text preview:
6MBI100S-120
IGBT MODULE ( S series) 1200V / 100A 6 in one-package
Features
· Compact package · P.C.board mount · Low VCE(sat)
IGBT Modules
Applications
· Inverter for motor drive · AC and DC servo drive amplifier · Uninterruptible power supply · Industrial machines, such as welding machines
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item Collector-Emitter voltage Gate-Emitter voltage Collector Continuous Tc=25°C current Tc=80°C 1ms Tc=25°C Tc=80°C 1ms Max. power dissipation (1 device) Operating temperature Storage temperature Isolation voltage Screw torque Symbol VCES VGES IC IC pulse -IC -IC pulse PC Tj Tstg Vis Mounting *1 Rating 1200 ±20 150 100 300 200 100 200 700 +150 -40 to +125 AC 2500 (1min.) 3.5 Unit V V A A A A W °C °C V N·m
Equivalent Circuit Schematic
21(P) 13(P)
1(G u)
5(G v)
9(G w)
2(Eu) 19(U)
6( Ev) 17(V)
10(Ew) 1 5 ( W)
3(G x)
7(G y)
11(G z)
4(Ex) 20(N)
8( Ey)
12(Ez) 14(N)
*1 : Recommendable value : 2.5 to 3.5 N·m (M5)
Electrical characteristics (Tj=25°C unless otherwise specified)
Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Symbol I CES I GES VGE(th) V CE(sat) C ies C oes C res ton tr t r(i) to f f tf VF t rr Characteristics Min. Typ. 5.5 7.2 2.3 2.8 12000 2500 2200 0.35 0.25 0.1 0.45 0.08 2.5 2.0 Conditions Max. 1.0 0.2 8.5 2.6 1.2 0.6 1.0 0.3 3.3 0.35 VGE=0V, VCE=1200V VCE=0V, VGE=±20V VCE=20V, IC=100mA Tj=25°C VGE=15V, IC=100A Tj=125°C VGE=0V VCE=10V f=1MHz VCC=600V IC=100A VGE=±15V RG=12 Tj=25°C Tj=125°C IF=100A IF=100A, VGE=0V Unit mA µA V V pF
µs
Tur n-off time Diode forward on voltage Reverse recovery time
V µs
Thermal resistance characteristics
Item Symbol Rth(j-c) Rth(j-c) Rth(c-f)*2 Characteristics Min. Typ. 0.05 Conditions Max. 0.18 0.36 IGBT FWD the base to cooling fin °C/W °C/W °C/W Unit
Thermal resistance
*2 : This is the value which is defined mounting on the additional cooling fin with thermal compound
6MBI100S-120
Characteristics
Collector current vs. Collector-Emitter voltage
250
IGBT Modules
Collector current vs. Collector-Emitter voltage
250
Tj= 25 C (typ.)
o
Tj= 125 C (typ.)
o
VGE= 20V 200
15V
12V 200
VGE= 20V
15V
12V
Collector current : Ic [ A ]
150 10V
Collector current : Ic [ A ]
150 10V
100
100
50
50 8V 8V
0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
Collector current vs. Collector-Emitter voltage VGE=15V (typ.)
250 10
Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25 C (typ.)
o
Tj= 25 C 200
o
Tj= 125 C 8 Collector - Emitter voltage : VCE [ V ]
o
Collector current : Ic [ A ]
150
6
100
4 Ic= 200A 2 Ic= 100A Ic= 50A
50
0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
0 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25 C
50000 1000
o
Dynamic Gate charge (typ.) Vcc=600V, Ic=100A, Tj= 25 C
25
o
800 Capacitance : Cies, Coes, Cres [ pF ] Collector - Emitter voltage : VCE [ V ]
20 Gate - Emitter voltage : VGE [ V ]
10000
Cies
600
15
400
10
200
5
1000 Coes Cres 500 0 5 10 15 20 25 30 35 Collector - Emitter voltage : VCE [ V ] 0 0 200 400 600 800 Gate charge : Qg [ nC ] 0 1000
6MBI100S-120
IGBT Modules
Switching time vs. Collector current (typ.)
Switching time vs. Collector current (typ.)
Vcc=600V,VGE=±15V, Rg=12,Tj=25oC
1000 1000
Vcc=600V,VGE=±15V, Rg=12,Tj=125oC
toff 500 toff ton tr 500
Switching time : ton, tr, toff, tf [ nsec ]
Switching time : ton, tr, toff, tf [ nsec ]
ton tr
tf 100
100 tf
50 0 50 100 Collector current : Ic [ A ] 150 200
50 0 50 100 Collector current : Ic [ A ] 150 200
Switching time vs. Gate resistance (typ.)
Switching loss vs. Collector current (typ.)
Vcc=600V,Ic=100A,VGE=±15V,Tj=25oC
5000 ton toff Switching time : ton, tr, toff, tf [ nsec ] tr Switching loss : Eon, Eoff, Err [ mJ/pulse ] 20 25
Vcc=600V,VGE=±15V, Rg=12,Tj=125oC
Eon(125 C )
o
1000
Eon(25 C ) 15
o
500
Eoff(125 C ) 10 Eoff(25 C ) Err(125 C ) 5 Err(25 C )
o o o
o
100
50 10 50 Gate resistance : Rg [ ] 100 200
0 0 50 100 Collector current : Ic [ A ] 150 200
Switching loss vs. Gate resistance (typ.)
Reverse bias safe operating area
250
Vcc=600V,Ic=100A,VGE=±15V ,Tj=125oC
80
+VGE=15V,-VGE=15V, Rg>12,Tj<125oC < = =
Eon Switching loss : Eon, Eoff, Err [ mJ/pulse ] 60 Collector current : Ic [ A ] Eoff Err 0 10 50 Gate resistance : Rg [ ] 100 300
200
150
40
100
20 50
0 0 200 400 600 800 1000 1200 1400 Collector - Emitter voltage : VCE [ V ]
6MBI100S-120
IGBT Modules
Forward current vs. Forward on voltage (typ.)
250 300
Reverse recovery characteristics (typ.)
Vcc=600V,VGE=±15V, Rg=12 ,Tj=25oC
Tj=125 C 200
o
Tj=25 C
o
trr(125 C)
o
Reverse recovery time : trr [ nsec ]
Reverse recovery current : Irr [ A ]
100
Forward current : IF [ A ]
Irr(125 C) trr(25 C) Irr(25 C)
o o
o
150
100
50
0 0 1 2 Forward on voltage : VF [ V ] 3 4
10 0 50 100 Forward current : IF [ A ] 150 200
Transient thermal resistance
1
FWD Thermal resistanse : Rth(j-c) [ C/W ]
IGBT
o
0.1
M626
0.01 0.001
0.01
0.1
1
Pulse width : Pw [ sec ]
Outline Drawings, mm
122±1 8-R2.25±0.3 4-ø5.5±0.3 13.09 19.05
19
110±0.3 94.5±0.3 19.05
18
19.05
17
19.05
16 15
11.5
+0.5 0
19.05 11.67
39.9±0.3
3.81 3.81
11.5
+0.5 0
20
14
57.5±0.3
50±0.3
58.42
ø2.5±0.1 1.5 ø2.1±0.1 Section A-A ø0.4 Shows theory dimensions 0.8±0.2 6
62±1
99.6±0.3 3.81
21
1
2
3
4
5
6
7
8
9
11
12
4.06 3.5±0.5 1.5±0.3
15
15.24 15.24 15.24 15.24 15.24 118.11
13
A
A
1.15±0.2
20.5±1
2.5±0.3
17±1
6.5±0.5
1±0.2
Others parts begin by 6m
6M-1
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