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Details, datasheet, quote on part number:6MBI100S-140
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Datasheet text preview:
6MBI100S-140
IGBT MODULE ( S series) 1400V / 100A 6 in one-package
Features
· Compact Package · P.C.Board Mount Module · Low VCE(sat)
IGBT Modules
Applications
· Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply · Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item Collector-Emitter voltage Gate-Emitter voltage Collector Continuous Tj=25°C current Tj=75°C 1ms Tj=25°C Tj=75°C 1ms Max. power dissipation (1 device) Operating temperature Storage temperature Isolation voltage *1 Screw torque Symbol VCES VGES IC IC pulse -IC -IC pulse PC Tj Tstg Vis Mounting *2 Rating 1400 ±20 150 100 300 200 100 200 700 +150 -40 to +125 AC 2500 (1min.) 3.5 Unit V V A A A A W °C °C V N·m
Equivalent Circuit Schematic
21(P) 13(P)
1(G u)
5(G v)
9(G w)
2(Eu) 19(U)
6( Ev) 17(V)
10(Ew) 1 5 ( W)
3(G x)
7(G y)
11(G z)
4(Ex) 20(N)
8( Ey)
12(Ez) 14(N)
*1:All terminals should be connected together when isolation test will be done. *2: Recommendable value : 2.5 to 3.5 N·m (M5)
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Symbol I CES I GES VGE(th) V CE(sat) C ies C oes C res ton tr t r(i) to f f tf VF t rr Characteristics Min. Typ. 5.5 7.2 2.4 3.0 12000 2500 2200 0.35 0.25 0.1 0.45 0.08 2.6 2.2 Conditions Max. 1.0 0.2 8.5 2.7 1.2 0.6 1.0 0.3 3.4 0.35 VGE=0V, VCE=1400V VCE=0V, VGE=±20V VCE=20V, IC=100mA Tj=25°C VGE=15V, IC=100A Tj=125°C VGE=0V VCE=10V f=1MHz VCC = 8 0 0 V IC=100A VGE=±15V RG=12 Tj=25°C Tj=125°C IF=100A IF=100A, VGE=0V Unit mA µA V V pF
µs
Turn-off time Diode forward on voltage Reverse recovery time
V µs
Thermal resistance characteristics
Item Symbol Rth(j-c) Rth(j-c) Rth(c-f)*2 Characteristics Min. Typ. 0.05 Conditions Max. 0.18 0.36 IGBT FWD the base to cooling fin °C/W °C/W °C/W Unit
Thermal resistance
*2 : This is the value which is defined mounting on the additional cooling fin with thermal compound
6MBI100S-140
Characteristics
Collector current vs. Collector-Emitter voltage Tj= 25°C (typ.)
IGBT Module
250
250
Collector current vs. Collector-Emitter voltage Tj= 125°C (typ.)
200
VGE= 20V 15V 12V
200
VGE= 20V 15V 12V
Collector current : Ic [ A ]
150 10V
Collector current : Ic [ A ]
150 10V
100
100
50
50 8V 8V
0
0
1
2
3
4
5
0
0
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
250
Collector current vs. Collector-Emitter voltage VGE=15V (typ.)
10
Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25°C (typ.)
150
Collector - Emitter voltage : VCE [ V ]
200
Tj= 25°C
Tj= 125°C
8
Collector current : Ic [ A ]
6
100
4 Ic= 200A 2 Ic= 100A Ic= 50A
50
0
0
1
2
3
4
5
0
5
10
15
20
25
Collector - Emitter voltage : VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C 50000 1000
Dynamic Gate charge (typ.) Vcc=800V, Ic=100A, Tj= 25°C 25
Capacitance : Cies, Coes, Cres [ pF ]
Collector - Emitter voltage : VCE [ V ]
800
20
10000
Cies
600
15
400
10
Coes
200
5
1000 Cres 0 5 10 15 20 25 30 35
500
0
0
200
400
600
800
0 1000
Collector - Emitter voltage : VCE [ V ]
Gate charge : Qg [ nC ]
Gate - Emitter voltage : VGE [ V ]
6MBI100S-140
IGBT Module
1000
Switching time vs. Collector current (typ.) Vcc=800V, VGE=±15V, Rg= 12ohm, Tj= 25°C
1000
Switching time vs. Collector current (typ.) Vcc=800V, VGE=±15V, Rg= 12ohm, Tj= 125°C
toff
Switching time : ton, tr, toff, tf [ nsec ]
500
Switching time : ton, tr, toff, tf [ nsec ]
ton toff tr
500
ton tr
100
100 tf
tf
50
0
50
100 Collector current : Ic [ A ]
150
200
50
0
50
100 Collector current : Ic [ A ]
150
200
Switching time vs. Gate resistance (typ.) Vcc=800V, Ic=100A, VGE=±15V, Tj= 25°C 5000 toff 40 35
Switching loss vs. Collector current (typ.) Vcc=800V, VGE=±15V, Rg=12ohm Eon(125°C)
Switching time : ton, tr, toff, tf [ nsec ]
ton tr 1000
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
30 25
Eon(25°C)
Eoff(125°C) 20 15 10 5 0
500
Eoff(25°C) Err(125°C)
100
tf
Err(25°C)
50
10
50 Gate resistance : Rg [ohm]
100
200
0
50
100 Collector current : Ic [ A ]
150
200
Switching loss vs. Gate resistance (typ.) Vcc=800V, Ic=100A, VGE=±15V, Tj= 125°C 80 Eon 250
Reverse bias safe operating area +VGE=15V, -VGE=12ohm, Tj=<125°C
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
200 60
Collector current : Ic [ A ]
300
150
40
100
Eoff 20
50 Err 0 10 50 100 0 0 200 400 600 800 1000 1200 1400 1600
Gate resistance : Rg [ohm]
Collector - Emitter voltage : VCE [ V ]
6MBI100S-140
IGBT Module
Reverse recovery characteristics (typ.) Vcc=800V, VGE=±15V, Rg=12ohm
Forward current vs. Forward on voltage (typ.) 250 300
200
Tj=125°C Tj=25°C
Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ]
trr(125°C)
Forward current : IF [ A ]
100
Irr(125°C) trr(25°C) Irr(25°C)
150
100
50
0
0
1
2
3
4
10
0
50
100 Forward current : IF [ A ]
150
200
Forward on voltage : VF [ V ]
Transient thermal resistance 1
Thermal resistanse : Rth(j-c) [ °C/W ]
FWD
IGBT
0.1
0.01 0.001
0.01
0.1
1
Pulse width : Pw [ sec ]
Outline Drawings, mm
mass : 260g
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