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Part: 6MBI10GS-060
Category:
Discrete
-> IGBTs (Insulated Gate Bipolar Transistors)
-> IGBT Modules
Description: Igbt Module
Company: Fuji Electric Corp. of America
Datasheet: Download 6MBI10GS-060 datasheet File size : 130 kB
Request For quote: Find where to buy 6MBI10GS-060
Datasheet text preview:
6MBI10GS-060
600V / 10A 6 in one-package
IGBT Modules
Features
· Compact Single in -line package
Applications
· Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply · Industrial machines, such as Welding machines
Equivalent Circuit Schematic Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item Collector-Emitter voltage Gate-Emitter voltage Collector Continuous current 1ms 1ms Max. power dissipation Operating temperature Storage temperature Isolation voltage Screw torque Symbol VCES VGES IC IC pulse -IC -IC pulse PC Tj Tstg Vis Mounting *1 Rating 600 ±20 10 20 10 20 45 +150 -40 to +125 AC 2000 (1min.) 1.7 Unit V V A A A A W °C °C V N·m
*1 : Recommendable value : 1.3 to 1.7 N·m (M4)
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Tur n-off time Diode forward on voltage Reverse recovery time Symbol I CES I GES VGE(th) V CE(sat) C ies C oes C res ton tr to f f tf VF t rr Characteristics Min. Typ. 5.5 650 150 36 Conditions Max. 1.0 0.1 8.5 2.8 1.2 1.0 1.0 0.35 3.0 0.3 VGE=0V, VCE=600V VCE=0V, VGE=±20V VCE=20V, IC=10mA VGE=15V, IC=10A VGE=0V VCE=10V f=1MHz VCC=300V IC=10A VGE=±15V RG=220ohm IF=10A, VGE=0V IF=10A, -di/dt=30A/µs, VGE=-10V mA µA V V pF Unit
µs
V µs
Thermal resistance characteristics
Item Symbol Rth(j-c) Rth(j-c) Rth(c-f)*2 Characteristics Min. Typ. 0.06 Conditions Max. 2.78 4.5 IGBT Diode the base to cooling fin °C/W °C/W °C/W Unit
Thermal resistance
*2 : This is the value which is defined mounting on the additional cooling fin with thermal compound
6MBI10GS-060
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage Tj=25°C
IGBT Module
Collector current vs. Collector-Emitter voltage Tj=125°C
20 18 16 Collector current : Ic [A] Collector current : Ic [A] 0 1 2 3 4 5 14 12 10 8 6 4 2 0 Collector-Emitter voltage : VCE [V]
20 18 16 14 12 10 8 6 4 2 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V]
Collector-Emitter vs. Gate-Emitter voltage Tj=25°C
Collector-Emitter vs. Gate-Emitter voltage Tj=125°C
10 VCE [V] VCE [V] Collector-Emitter voltage : 0 5 10 15 20 25
10
8
8
Collector-Emitter voltage :
6
6
4
4
2
2
0 Gate-Emitter voltage : VGE [V]
0 0 5 10 15 20 25 Gate-Emitter voltage : VGE [V]
Switching time vs. Collector current Vcc=300V, RG=220 ohm, VGE=±15V, Tj=25°C
Switching time vs. Collector current Vcc=300V, RG=220 ohm, VGE=±15V, Tj=125°C
Switching time : ton, tr, toff, tf [n sec.]
1000
Switching time : ton, tr, toff, tf [n sec.] 0 2 4 6 8 10 12 14 16
1000
100
100
10 Collector current : Ic [A]
10 0 2 4 6 8 10 12 14 16 Collector current : Ic [A]
6MBI10GS-060
IGBT Module
Switching time vs. RG Vcc=300V, Ic=10A, VGE=±15V, Tj=25°C 5000 5000
Switching time vs. RG Vcc=300V, Ic=10A, VGE=±15V, Tj=125°C
Switching time : ton, tr, toff, tf [n sec.]
Switching time : ton, tr, toff, tf [n sec.] 0 200 400 600 800 1000 1200
1000
1000
100
100
10 Gate resistance : RG [ohm]
10 0
200
400
600
800
1000
1200
Gate resistance : RG [ohm]
Dynamic input characteristics Tj=25°C 500 25 5000
Capacitance vs. Collector-Emitter voltage Tj=25°C
Collector-Emitter voltage : VCE [V]
20
Gate-Emitter voltage : VGE [V] Capacitance : Cies, Coes, Cres [pF]
400
1000
300
15
200
10
100
100
5
10 0 0 10 20 30 40 50 Gate charge : Qg [nC] 0 0 5 10 15 20 25 30 Collector-Emitter voltage : VCE [V]
Reversed biased safe operating area +VGE=15V, -VGE 220 ohm = = = 100 90 80 70 Collector current : Ic [A] 60 50 40 30 20 10 0 0 100 200 300 400 500 600 0.001 Ther mal resistance : Rth (j-c) [°C/W] 10
Transient thermal resistance
1
0.1
0.01
0.1
1
Collector-Emitter voltage : VCE [V]
Pulse width : PW [sec.]
6MBI10GS-060
Switching loss vs. Collector current Vcc=300V, RG=220 ohm, VGE=±15V, Tj=125°C 1.0 0.9 Switching loss : Eon, Eoff, Err [mJ/pulse] 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 2 4 6 8 10 12 14 16 Collector current : Ic [A] Switching loss : Eon, Eoff, Err [mJ/pulse] 1.6 1.4 1.2
IGBT Module
Switching loss vs. Gate resistance Vcc=300V, Ic=10A, VGE=±15V, Tj=125°C
1.0 0.8 0.6 0.4
0.2 0.0 0 200 400 600 800 1000 1200 Gate resistance : RG [ohm]
Forward current vs. Forward voltage 22 20 18 Reverse recovery current : Irr [A] Reverse recovery time : trr [n sec.] 16 Forward current : IF [A] 14 12 10 8 6 4 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1 0 2 4 100
Reverse recovery characteristics trr, Irr, vs. IF
10
6
8
10
12
14
16
Forward voltage : VF [V]
Forward current : IF [A]
Outline Drawings, mm
Others parts begin by 6m
6M-1
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