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Part: 6MBI10S-120L
Category:
Discrete
-> IGBTs (Insulated Gate Bipolar Transistors)
Description: Igbt Module
Company: Fuji Electric Corp. of America
Datasheet: Download 6MBI10S-120L datasheet File size : 130 kB
Request For quote: Find where to buy 6MBI10S-120L
Datasheet text preview:
6MBI10S-120
IGBT MODULE ( S series) 1200V / 10A 6 in one-package
Features
· Compact package · P.C.board mount · Low VCE(sat)
IGBT Modules
Applications
· Inverter for motor drive · AC and DC servo drive amplifier · Uninterruptible power supply · Industrial machines, such as welding machines
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item Symbol Collector-Emitter voltage VCES Gate-Emitter voltage VGES Collector Continuous Tc=25°C IC current Tc=80°C 1ms Tc=25°C IC pulse Tc=80°C -IC 1ms -IC pulse Max. power dissipation (1 device) PC Operating temperature Tj Storage temperature Tstg Isolation voltage Vis Screw torque Mounting *1 *1 : Recommendable value : 2.5 to 3.5 N·m (M5) Rating 1200 ±20 15 10 30 20 10 20 75 +150 -40 to +125 AC 2500 (1min.) 3.5 Unit V V A A A A W °C °C V N·m
Equivalent circuit
1 3 (P )
1 (G u )
5 (G v)
9 (G w )
2(E u) 1 6 (U )
6 (E v ) 1 5 (V )
1 0 (E w ) 1 4 (W )
3 (G x)
7 (G y)
1 1 ( G z)
4 (E x ) 1 7 (N )
8 (E y )
1 2 (E z )
Electrical characteristics (Tj=25°C unless otherwise specified)
Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Symbol I CES I GES VGE(th) V CE(sat) C ies C oes C res ton tr t r(i) to f f tf VF t rr Characteristics Min. Typ. 5.5 7.2 2.3 2.8 1200 250 220 0.35 0.25 0.1 0.45 0.08 2.5 2.0 Conditions Max. 1.0 0.2 8.5 2.6 1.2 0.6 1.0 0.3 3.3 0.35 VGE=0V, VCE=1200V VCE=0V, VGE=±20V VCE=20V, IC=10mA Tj=25°C VGE=15V, IC=10A Tj=125°C VGE=0V VCE=10V f=1MHz VCC=600V IC=10A VGE=±15V RG=120ohm Tj=25°C Tj=125°C IF=10A IF=10A, VGE=0V Unit mA µA V V pF
µs
Tur n-off time Diode forward on voltage Reverse recovery time
V µs
Thermal resistance characteristics
Item Symbol Rth(j-c) Rth(j-c) Rth(c-f)*2 Characteristics Min. Typ. 0.05 Conditions Max. 1.67 2.78 IGBT FWD the base to cooling fin °C/W °C/W °C/W Unit
Thermal resistance
*2 : This is the value which is defined mounting on the additional cooling fin with thermal compound
6MBI10S-120
Characteristics
IGBT Modules
Collector current vs. Collector-Emitter voltage Tj= 25 C (typ.)
25 25
o
Collector current vs. Collector-Emitter voltage Tj= 125 C (typ.)
o
VGE= 20V 15V 20
12V 20
VGE= 20V
15V
12V
Collector current : Ic [ A ]
15 10V 10
Collector current : Ic [ A ]
15 10V
10
5
5
8V 8V
0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
Collector current vs. Collector-Emitter voltage VGE=15V (typ.)
25 10
Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25 C (typ.)
o
Tj= 25 C 20
o
Tj= 125 C 8 Collector - Emitter voltage : VCE [ V ]
o
Collector current : Ic [ A ]
15
6
10
4 Ic= 20A 2 Ic= 10A Ic= 5A
5
0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
0 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25
5000
o
Dynamic Gate charge (typ.) Vcc=600V, Ic=10A, Tj= 25
1000
o
C
C
25
800 Capacitance : Cies, Coes, Cres [ pF ] Collector - Emitter voltage : VCE [ V ]
20 Gate - Emitter voltage : VGE [ V ]
1000
Cies
600
15
500
400
10
200
5
100 Coes Cres 50 0 5 10 15 20 25 30 35 Collector - Emitter voltage : VCE [ V ] 0 0 20 40 60 80 Gate charge : Qg [ nC ] 0 100
6MBI10S-120
IGBT Modules
Switching time vs. Collector current (typ.) Vcc=600V,VGE=±15V, Rg=120,Tj=25oC
1000 1000
Switching time vs. Collector current (typ.)
Vcc=600V,VGE=±15V, Rg=120,Tj=125oC
toff 500 toff Switching time : ton, tr, toff, tf [ nsec ] 500
Switching time : ton, tr, toff, tf [ nsec ]
ton
ton
tr
tr
tf 100
100 tf
50 0 5 10 Collector current : Ic [ A ] 15 20
50 0 5 10 Collector current : Ic [ A ] 15 20
Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=10A, VGE=±15V, Tj= 25°C
5000 3
Switching loss vs. Collector current (typ.)
Vcc=600V,VGE=±15V, Rg=120,Tj=25oC
ton toff Switching time : ton, tr, toff, tf [ nsec ] tr 1000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] E o n ( 1 2 5 C)
o
2
E o n ( 2 5 C)
o
500
E o f f ( 1 2 5 C) 1 E o f f ( 2 5 C) Err(125 C)
o o
o
100
tf Err(25 C)
o
50 50 100 500 Gate resistance : Rg [ ] 1000 2000
0 0 5 10 Collector current : Ic [ A ] 15 20
8
Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=10A, VGE=±15V, Tj= 125°C
Reverse bias safe operating area
25
+VGE=15V, -VGE120,Tj<125oC = = =
Eon Switching loss : Eon, Eoff, Err [ mJ/pulse ] 6 Collector current : Ic [ A ] Eoff Err 0 50 100 500 Gate resistance : Rg [ ] 1000 2000
20
15
4
10
2 5
0 0 200 400 600 800 1000 1200 1400 Collector - Emitter voltage : VCE [ V ]
6MBI10S-120
IGBT Modules
Forward current vs. Forward on voltage (typ.)
25 300
Reverse recovery characteristics (typ.)
Vcc=600V,VGE=±15V, Rg=120
Tj=125 C 20
o
Tj=25 C 100
o
trr(125 C)
o
trr(25 C) Reverse recovery time : trr [ nsec ] Reverse recovery current : Irr [ A ] 50 Forward current : IF [ A ]
o
15
10
10
Irr(125 C)
o
Irr(25 C)
o
5
0 0 1 2 Forward on voltage : VF [ V ] 3 4
1 0 5 10 Forward current : IF [ A ] 15 20
Transient thermal resistance
5 FWD
IGBT Thermal resistanse : Rth(j-c) [ C/W ]
1
o
0.1
M623
0.01 Pulse width : Pw [ sec ] 0.1 1
0.05 0.001
Outline Drawings, mm
107.5±1 4-ø6.1±0.3 2-ø5.5±0.3 16.02
17
93±0.3 15.24 15.24 15.24 15.24
13
69.6±0.3 27.6±0.3 32±0.3 41.91 45±1
+ 0.5 0
ø2.5±0.1 1.5 93±0.3 A A 1.15±0.2 ø2.1±0.1 Section A-A ø0.4 0.8±0.2
12
11
1
3.81 3.5±0.5 1.5±0.3 16.02 11.43 11.43 11.43 11.43 11.43 1±0.2
20.5±1
2.5±0.3
17±1
6.5±0.5
Shows theory dimensions
6
Others parts begin by 6m
6M-1
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