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Part: 6MBI15GS-060
Category:
Discrete
-> IGBTs (Insulated Gate Bipolar Transistors)
-> IGBT Modules
Description: Igbt Module
Company: Fuji Electric Corp. of America
Datasheet: Download 6MBI15GS-060 datasheet File size : 122 kB
Request For quote: Find where to buy 6MBI15GS-060
Datasheet text preview:
6MBI15GS-060
600V / 15A 6 in one-package
IGBT Modules
Features
· Compact Single in -line package
Applications
· Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply · Industrial machines, such as Welding machines
Equivalent Circuit Schematic Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item Collector-Emitter voltage Gate-Emitter voltage Collector Continuous current 1ms 1ms Max. power dissipation Operating temperature Storage temperature Isolation voltage Screw torque Symbol VCES VGES IC IC pulse -IC -IC pulse PC Tj Tstg Vis Mounting *1 Rating 600 ±20 15 30 15 30 60 +150 -40 to +125 AC 2000 (1min.) 1.7 Unit V V A A A A W °C °C V N·m
*1 : Recommendable value : 1.3 to 1.7 N·m (M4)
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Tur n-off time Diode forward on voltage Reverse recovery time Symbol I CES I GES VGE(th) V CE(sat) C ies C oes C res ton tr to f f tf VF t rr Characteristics Min. Typ. 5.5 975 225 54 Conditions Max. 1.0 0.1 8.5 2.8 1.2 1.0 1.0 0.35 3.0 0.3 VGE=0V, VCE=600V VCE=0V, VGE=±20V VCE=20V, IC=15mA VGE=15V, IC=15A VGE=0V VCE=10V f=1MHz VCC=300V IC=15A VGE=±15V RG=150ohm IF=15A, VGE=0V IF=15A, -di/dt=45A/µs, VGE=-10V mA µA V V pF Unit
µs
V µs
Thermal resistance characteristics
Item Symbol Rth(j-c) Rth(j-c) Rth(c-f)*2 Characteristics Min. Typ. 0.06 Conditions Max. 2.08 3.0 IGBT Diode the base to cooling fin °C/W °C/W °C/W Unit
Thermal resistance
*2 : This is the value which is defined mounting on the additional cooling fin with thermal compound
6MBI15GS-060
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage Tj=25°C
IGBT Module
Collector current vs. Collector-Emitter voltage Tj=125°C
30
30
25 Collector current : Ic [A] Collector current : Ic [A] 0 1 2 3 4 5
25
20
20
15
15
10
10
5
5
0 Collector-Emitter voltage : VCE [V]
0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V]
Collector-Emitter vs. Gate-Emitter voltage Tj=25°C
Collector-Emitter vs. Gate-Emitter voltage Tj=125°C
10 VCE [V] VCE [V] Collector-Emitter voltage : 0 5 10 15 20 25
10
8
8
Collector-Emitter voltage :
6
6
4
4
2
2
0 Gate-Emitter voltage : VGE [V]
0 0 5 10 15 20 25 Gate-Emitter voltage : VGE [V]
Switching time vs. Collector current Vcc=300V, RG=150 ohm, VGE=±15V, Tj=25°C
Switching time vs. Collector current Vcc=300V, RG=150 ohm, VGE=±15V, Tj=125°C
Switching time : ton, tr, toff, tf [n sec.]
1000
Switching time : ton, tr, toff, tf [n sec.] 0 5 10 15 20 25
1000
100
100
10 Collector current : Ic [A]
10 0 5 10 15 20 25 Collector current : Ic [A]
6MBI15GS-060
IGBT Module
Switching time vs. RG Vcc=300V, Ic=15A, VGE=±15V, Tj=25°C 5000 5000
Switching time vs. RG Vcc=300V, Ic=15A, VGE=±15V, Tj=125°C
Switching time : ton, tr, toff, tf [n sec.]
1000
Switching time : ton, tr, toff, tf [n sec.]
1000
100
100
10 0 100 200 300 400 500 600 700 800 Gate resistance : RG [ohm]
10 0 100 200 300 400 500 600 700 800 Gate resistance : RG [ohm]
Dynamic input characteristics Tj=25°C 500 25 5000
Capacitance vs. Collector-Emitter voltage Tj=25°C
Collector-Emitter voltage : VCE [V]
20
Gate-Emitter voltage : VGE [V] Capacitance : Cies, Coes, Cres [pF]
400
1000
300
15
200
10
100
100
5
10 0 0 10 20 30 40 50 60 70 80 Gate charge : Qg [nC] 0 0 5 10 15 20 25 30 Collector-Emitter voltage : VCE [V]
Reversed biased safe operating area > +VGE=15V, -VGE < 15V, Tj < 125°C, RG = 150 ohm = = 10 140 Ther mal resistance : Rth (j-c) [°C/W]
Transient thermal resistance
120
Collector current : Ic [A]
100 80
1
60
40
20
0 0 100 200 300 400 500 600 Collector-Emitter voltage : VCE [V]
0.1 0.001
0.01
0.1
1
Pulse width : PW [sec.]
6MBI15GS-060
IGBT Module
Switching loss vs. Collector current Vcc=300V, RG=150 ohm, VGE=±15V, Tj=125°C 1.6 1.4 1.2 2.5
Switching loss vs. Gate resistance Vcc=300V, Ic=15A, VGE=±15V, Tj=125°C
Switching loss : Eon, Eoff, Err [mJ/pluse]
Switching loss : Eon, Eoff, Err [mJ/pluse] 0 5 10 15 20 25
2.0
1.0 0.8 0.6 0.4
1.5
1.0
0.5
0.2 0.0 0 100 200 300 400 500 600 700 800 Collector current : Ic [A] Gate resistance : RG [ohm]
0.0
Forward current vs. Forward voltage 35
Reverse recovery characteristics trr, Irr, vs. IF
30 Reverse recovery current : Irr [A] Reverse recovery time : trr [n sec.] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 100
25 Forward current : IF [A]
20
15
10
10
5
0
1 0 5 10 15 20 25 Forward current : IF [A]
Forward voltage : VF [V]
Outline Drawings, mm
Others parts begin by 6m
6M-1
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