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Details, datasheet, quote on part number:6MBI15S-120
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Datasheet text preview:
6MBI15S-120
IGBT MODULE ( S series) 1200V / 15A 6 in one-package
Features
· Compact package · P.C.board mount · Low VCE(sat)
IGBT Modules
Applications
· Inverter for motor drive · AC and DC servo drive amplifier · Uninterruptible power supply · Industrial machines, such as welding machines
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item Symbol Collector-Emitter voltage VCES Gate-Emitter voltage VGES Collector Continuous Tc=25°C IC current Tc=80°C 1ms Tc=25°C IC pulse Tc=80°C -IC 1ms -IC pulse Max. power dissipation (1 device) PC Operating temperature Tj Storage temperature Tstg Isolation voltage Vis Screw torque Mounting *1 *1 : Recommendable value : 2.5 to 3.5 N·m (M5) Rating 1200 ±20 25 15 50 30 15 30 110 +150 -40 to +125 AC 2500 (1min.) 3.5 Unit V V A A A A W °C °C V N·m
Equivalent Circuit Schematic
13(P)
1(Gu)
5(Gv)
9(Gw)
2(Eu) 16(U)
6(Ev) 15(V)
10(Ew) 14(W)
3(Gx)
7(Gy)
11(Gz)
4(Ex) 17(N)
8(Ey)
12(Ez)
Electrical characteristics (Tj=25°C unless otherwise specified)
Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Symbol I CES I GES VGE(th) V CE(sat) C ies C oes C res ton tr t r(i) to f f tf VF t rr Characteristics Min. Typ. 5.5 7.2 2.3 2.8 1800 375 330 0.35 0.25 0.1 0.45 0.08 2.5 2.0 Conditions Max. 1.0 0.2 8.5 2.6 1.2 0.6 1.0 0.3 3.3 0.35 VGE=0V, VCE=1200V VCE=0V, VGE=±20V VCE=20V, IC=15mA Tj=25°C VGE=15V, IC=15A Tj=125°C VGE=0V VCE=10V f=1MHz VCC=600V IC=15A VGE=±15V RG=82 ohm Tj=25°C Tj=125°C IF=15A IF=15A, VGE=0V Unit mA µA V V pF
µs
Tur n-off time Diode forward on voltage Reverse recovery time
V µs
Thermal resistance characteristics
Item Symbol Rth(j-c) Rth(j-c) Rth(c-f)*2 Characteristics Min. Typ. 0.05 Conditions Max. 1.14 1.85 IGBT FWD the base to cooling fin °C/W °C/W °C/W Unit
Thermal resistance
*2 : This is the value which is defined mounting on the additional cooling fin with thermal compound
6MBI15S-120
Characteristics
Collector current vs. Collector-Emitter voltage Tj= 25 C (typ.)
35 VGE= 20V 15V 30 12V 30 35
o
IGBT Modules
Collector current vs. Collector-Emitter voltage Tj= 125 C (typ.)
o
VGE= 20V
15V
12V
25 Collector current : Ic [ A ] Collector current : Ic [ A ]
25
20 10V 15
20
10V
15
10
10
5 8V 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
5 8V 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
Collector current vs. Collector-Emitter voltage VGE=15V (typ.)
35 10
Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25 C (typ.)
o
30
Tj= 25 C
o
Tj= 125 C 8
o
25 Collector current : Ic [ A ]
Collector - Emitter voltage : VCE [ V ]
6
20
15
4 Ic= 30A 2 Ic= 15A Ic= 7.5A
10
5
0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
0 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25 C
5000 1000
o
Dynamic Gate charge (typ.) Vcc=600V, Ic=15A, Tj= 25 C
25
o
800 Capacitance : Cies, Coes, Cres [ pF ] Cies 1000 Collector - Emitter voltage : VCE [ V ]
20 Gate - Emitter voltage : VGE [ V ]
600
15
500
400
10
Coes 100 Cres
200
5
50 0 5 10 15 20 25 30 35 Collector - Emitter voltage : VCE [ V ]
0 0 50 100 Gate charge : Qg [ nC ]
0 150
6MBI15S-120
IGBT Modules
Switching time vs. Collector current (typ.)
Switching time vs. Collector current (typ.)
Vcc=600V,VGE=±15V, Rg=82,Tj=25oC
1000 1000
Vcc=600V,VGE=±15V, Rg=82,Tj=125oC
toff 500 toff Switching time : ton, tr, toff, tf [ nsec ] 500
Switching time : ton, tr, toff, tf [ nsec ]
ton tr
ton
tr
tf 100
100 tf
50 0 5 10 15 20 25 Collector current : Ic [ A ]
50 0 5 10 15 20 25 Collector current : Ic [ A ]
Switching time vs. Gate resistance (typ.)
Switching loss vs. Collector current (typ.)
Vcc=600V,Ic=15A,VGE=±15V,Tj=25oC
5000 5
Vcc=600V,VGE=±15V, Rg=82
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
4 E o n ( 1 2 5 C)
o
Switching time : ton, tr, toff, tf [ nsec ]
1000
3 E o n ( 2 5 C) 2 E o f f ( 1 2 5 C) E o f f ( 2 5 C) 1 Err(125 C) Err(25 C) 0
o o o o o
500 toff
ton
tr 100 tf 50 30 100 Gate resistance : Rg [
]
1000
0
5
10
15
20
25
30
Collector current : Ic [ A ]
Switching loss vs. Gate resistance (typ.)
Reverse bias safe operating area
40
Vcc=600V,Ic=15A,VGE=±15V,Tj=125oC
12
+VGE=15V, -VGE82,Tj<125oC = = =
10 Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Eon 30 Collector current : Ic [ A ] Eoff Err 30 100 Gate resistance : Rg [
]
8
6
20
4
10
2
0 1000
0 0 200 400 600 800 1000 1200 1400 Collector - Emitter voltage : VCE [ V ]
6MBI15S-120
Forward current vs. Forward on voltage (typ.)
35
o
IGBT Modules
Reverse recovery characteristics (typ.)
Vcc=600V,VGE=±15V, Rg=82
300
30
Tj=125 C
o
Tj=25 C
trr(125 C)
o
Reverse recovery time : trr [ nsec ]
Reverse recovery current : Irr [ A ]
25 Forward current : IF [ A ]
100 trr(25 C)
o
20
50
15
10
5
10
Irr(125 C)
o
Irr(25 C) 0 0 1 2 Forward on voltage : VF [ V ] 3 4 5 0 10 Forward current : IF [ A ] 20
o
Transient thermal resistance
5
FWD Thermal resistanse : Rth(j-c) [ C/W ]
IGBT 1
o
0.5
0.1
M623
0.01 Pulse width : Pw [ sec ] 0.1 1
0.05 0.001
Outline Drawings, mm
107.5±1 4-ø6.1±0.3 2-ø5.5±0.3 16.02
17
93±0.3 15.24 15.24 15.24 15.24
13
69.6±0.3 27.6±0.3 32±0.3 41.91 45±1
+ 0.5 0
ø2.5±0.1 1.5 93±0.3 A A 1.15±0.2 ø2.1±0.1 Section A-A ø0.4 0.8±0.2
12
11
1
3.81 3.5±0.5 1.5±0.3 16.02 11.43 11.43 11.43 11.43 11.43 1±0.2
20.5±1
2.5±0.3
17±1
6.5±0.5
Shows theory dimensions
6
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