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Part: 6MBI25S-120L
Category:
Discrete
-> IGBTs (Insulated Gate Bipolar Transistors)
Description: Igbt Module (S Series)
Company: Fuji Electric Corp. of America
Datasheet: Download 6MBI25S-120L datasheet File size : 133 kB
Request For quote: Find where to buy 6MBI25S-120L
Datasheet text preview:
6MBI25S-120
IGBT MODULE ( S series) 1200V / 25A 6 in one-package
Features
· Compact package · P.C.board mount · Low VCE(sat)
IGBT Modules
Applications
· Inverter for motor drive · AC and DC servo drive amplifier · Uninterruptible power supply · Industrial machines, such as welding machines
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item Symbol Collector-Emitter voltage VCES Gate-Emitter voltage VGES Collector Continuous Tc=25°C IC current Tc=80°C 1ms Tc=25°C IC pulse Tc=80°C -IC 1ms -IC pulse Max. power dissipation (1 device) PC Operating temperature Tj Storage temperature Tstg Isolation voltage Vis Screw torque Mounting *1 *1 : Recommendable value : 2.5 to 3.5 N·m (M5) Rating 1200 ±20 35 25 70 50 25 50 180 +150 -40 to +125 AC 2500 (1min.) 3.5 Unit V V A A A A W °C °C V N·m
Equivalent Circuit Schematic
1 3 (P )
1 (G u )
5 (G v)
9 (G w )
2 (E u ) 1 6 (U )
6 (E v ) 1 5 (V )
1 0 (E w ) 1 4 (W )
3 (G x)
7 (G y)
1 1 (G z)
4 (E x ) 1 7 (N )
8 (E y )
1 2 (E z )
Electrical characteristics (Tj=25°C unless otherwise specified)
Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Symbol I CES I GES VGE(th) V CE(sat) C ies C oes C res ton tr t r(i) to f f tf VF t rr Characteristics Min. Typ. 5.5 7.2 2.3 2.8 3000 625 550 0.35 0.25 0.1 0.45 0.08 2.5 2.0 Conditions Max. 1.0 0.2 8.5 2.6 1.2 0.6 1.0 0.3 3.3 0.35 VGE=0V, VCE=1200V VCE=0V, VGE=±20V VCE=20V, IC=25mA Tj=25°C VGE=15V, IC=25A Tj=125°C VGE=0V VCE=10V f=1MHz VCC=600V IC=25A VGE=±15V RG=51 Tj=25°C Tj=125°C IF=25A IF=25A, VGE=0V Unit mA µA V V pF
µs
Tur n-off time Diode forward on voltage Reverse recovery time
V µs
Thermal resistance characteristics
Item Symbol Rth(j-c) Rth(j-c) Rth(c-f)*2 Characteristics Min. Typ. 0.05 Conditions Max. 0.69 1.30 IGBT FWD the base to cooling fin °C/W °C/W °C/W Unit
Thermal resistance
*2 : This is the value which is defined mounting on the additional cooling fin with thermal compound
6MBI25S-120
Characteristics
Collector current vs. Collector-Emitter voltage Tj= 25 C (typ.)
60 60
o
IGBT Modules
Collector current vs. Collector-Emitter voltage Tj= 125 C (typ.)
o
50
VGE= 20V 15V 12V
VGE= 20V 15V 50
12V
Collector current : Ic [ A ]
Collector current : Ic [ A ]
40
40
10V 30
30
10V
20
20
10
10 8V 8V
0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
Collector current vs. Collector-Emitter voltage VGE=15V (typ.)
60 10
Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25 C (typ.)
o
50
Tj= 25 C
o
Tj= 125 C 8 Collector - Emitter voltage : VCE [ V ]
o
Collector current : Ic [ A ]
40
6
30
4 Ic= 50A 2 Ic= 25A Ic= 12.5A
20
10
0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
0 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25
10000
o
Dynamic Gate charge (typ.) Vcc=600V, Ic=25A, Tj= 25
1000
o
C
C
25
800 Capacitance : Cies, Coes, Cres [ pF ] Collector - Emitter voltage : VCE [ V ] Cies
20 Gate - Emitter voltage : VGE [ V ]
600
15
1000
400
10
Coes Cres 100 0 5 10 15 20 25 30 35 Collector - Emitter voltage : VCE [ V ]
200
5
0 0 50 100 150 200 Gate charge : Qg [ nC ]
0 250
6MBI25S-120
IGBT Modules
Switching time vs. Collector current (typ.)
Switching time vs. Collector current (typ.)
Vcc=600V,VGE=±15V, Rg=51,Tj=25oC
1000 1000
Vcc=600V,VGE=±15V, Rg=51,Tj=125oC
toff 500 toff Switching time : ton, tr, toff, tf [ nsec ] 500
Switching time : ton, tr, toff, tf [ nsec ]
ton
ton tr
tr
tf 100
100 tf
50 0 10 20 Collector current : Ic [ A ] 30 40
50 0 10 20 Collector current : Ic [ A ] 30 40
Switching time vs. Gate resistance (typ.)
Switching loss vs. Collector current (typ.)
Vcc=600V,Ic=25A,VGE=±15V, Tj=25oC
5000 7
Vcc=600V,VGE=±15V, Rg=51
6 Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Eon(125 C )
o
Switching time : ton, tr, toff, tf [ nsec ]
5
1000
4
Eon(25 C)
o
500
3
toff
Eoff(125 C )
o
ton tr 100 tf 50 10 50 100 500 Gate resistance : Rg [ ]
2
Eoff(25 C ) Err(125 C )
o
o
1 Err(25 C ) 0 0 10 20 30 40 50 Collector current : Ic [ A ]
o
Switching loss vs. Gate resistance (typ.)
Vcc=600V,Ic=25A,VGE=±15V,Tj=125oC
20 60
Reverse bias safe operating area +VGE=15V, -VGE51,Tj<125oC = = =
50 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 15 Eon Collector current : Ic [ A ] Eoff 10 Err 0 10 50 100 500 Gate resistance : Rg [ ] 0 0 200 400 600 800 1000 1200 1400 Collector - Emitter voltage : VCE [ V ] 40
10
30
20
5
6MBI25S-120
IGBT Modules
Forward current vs. Forward on voltage (typ.)
60 300
Reverse recovery characteristics (typ.)
Vcc=600V,VGE=±15V, Rg=51
Tj=125 C 50
o
Tj=25 C trr(125 C)
o
o
Reverse recovery time : trr [ nsec ]
Reverse recovery current : Irr [ A ]
Forward current : IF [ A ]
40
100
trr(25 C )
o
30
20
10
Irr(125 C)
o
Irr(25 C) 0 0 1 2 Forward on voltage : VF [ V ] 3 4 10 0 10 20 Forward current : IF [ A ] 30 40
o
Transient thermal resistance
5
FWD Thermal resistanse : Rth(j-c) [ C/W ] 1 IGBT
o
0.1
M623
0.01 0.001 0.01 Pulse width : Pw [ sec ] 0.1 1
Outline Drawings, mm
107.5±1 4-ø6.1±0.3 2-ø5.5±0.3 16.02
17
93±0.3 15.24 15.24 15.24 15.24
13
69.6±0.3
ø2.5±0.1
27.6±0.3
32±0.3
41.91
45±1
+ 0.5 0
1.5
93±0.3 A A 1.15±0.2 ø2.1±0.1 Section A-A ø0.4
12
11
1
3.81
3.5±0.5
1.5±0.3
16.02
11.43 11.43 11.43 11.43 11.43
20.5±1
2.5±0.3
17±1
6.5±0.5
1±0.2
0.8±0.2
Shows theory dimensions
6
Others parts begin by 6m
6M-1
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