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Part: 6MBI35S-120L
Category:
Discrete
-> IGBTs (Insulated Gate Bipolar Transistors)
Description: Igbt Module (S Series)
Company: Fuji Electric Corp. of America
Datasheet: Download 6MBI35S-120L datasheet File size : 130 kB
Request For quote: Find where to buy 6MBI35S-120L
Datasheet text preview:
6MBI35S-120
IGBT MODULE ( S series) 1200V / 35A 6 in one-package
Features
· Compact package · P.C.board mount · Low VCE(sat)
IGBT Modules
Applications
· Inverter for motor drive · AC and DC servo drive amplifier · Uninterruptible power supply · Industrial machines, such as welding machines
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item Collector-Emitter voltage Gate-Emitter voltage Collector Continuous Tc=25°C current Tc=80°C 1ms Tc=25°C Tc=80°C 1ms Max. power dissipation (1 device) Operating temperature Storage temperature Isolation voltage Screw torque Symbol VCES VGES IC IC pulse -IC -IC pulse PC Tj Tstg Vis Mounting *1 Rating 1200 ±20 50 35 100 70 35 70 240 +150 -40 to +125 AC 2500 (1min.) 3.5 Unit V V A A A A W °C °C V N·m
Equivalent Circuit Schematic
1 3 (P )
1 (G u )
5 (G v)
9 (G w )
2 (E u ) 1 6 (U )
6 (E v ) 1 5 (V )
1 0 (E w ) 1 4 (W )
3 (G x)
7 (G y)
1 1 (G z)
4 (E x ) 1 7 (N )
8 (E y )
1 2 (E z )
*1 : Recommendable value : 2.5 to 3.5 N·m (M5)
Electrical characteristics (Tj=25°C unless otherwise specified)
Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Symbol I CES I GES VGE(th) V CE(sat) C ies C oes C res ton tr t r(i) to f f tf VF t rr Characteristics Min. Typ. 5.5 7.2 2.3 2.8 4200 875 770 0.35 0.25 0.1 0.45 0.08 2.5 2.0 Conditions Max. 1.0 0.2 8.5 2.65 1.2 0.6 1.0 0.3 3.3 0.35 VGE=0V, VCE=1200V VCE=0V, VGE=±20V VCE=20V, IC=35mA Tj=25°C VGE=15V, IC=35A Tj=125°C VGE=0V VCE=10V f=1MHz VCC=600V IC=35A VGE=±15V RG=33 Tj=25°C Tj=125°C IF=35A IF=35A, VGE=0V Unit mA µA V V pF
µs
Tur n-off time Diode forward on voltage Reverse recovery time
V µs
Thermal resistance characteristics
Item Symbol Rth(j-c) Rth(j-c) Rth(c-f)*2 Characteristics Min. Typ. 0.05 Conditions Max. 0.52 0.90 IGBT FWD the base to cooling fin °C/W °C/W °C/W Unit
Thermal resistance
*2 : This is the value which is defined mounting on the additional cooling fin with thermal compound
6MBI35S-120
Characteristics
Collector current vs. Collector-Emitter voltage Tj= 25 C (typ.)
80 VGE= 20V 15V 12V 80
o
IGBT Modules
Collector current vs. Collector-Emitter voltage Tj= 125 C (typ.)
VGE= 20V 15V 12V
o
60 Collector current : Ic [ A ] Collector current : Ic [ A ]
60
10V 40
10V 40
20
20
8V 8V 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
Collector current vs. Collector-Emitter voltage VGE=15V (typ.)
80 Tj= 25 C
o
Collector-Emitter voltage vs. Gate-Emitter voltage
10
Tj= 25 C (typ.)
o
Tj= 125 C
o
8 Collector - Emitter voltage : VCE [ V ] 60 Collector current : Ic [ A ]
6
40
4 Ic= 70A 2 Ic= 35A Ic= 17.5A
20
0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
0 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25 C
10000 1000
o
Dynamic Gate charge (typ.) Vcc=600V, Ic=35A, Tj= 25 C
25
o
800 Cies Capacitance : Cies, Coes, Cres [ pF ] Collector - Emitter voltage : VCE [ V ]
20 Gate - Emitter voltage : VGE [ V ]
600
15
1000
400
10
Coes Cres
200
5
100 0 5 10 15 20 25 30 35 Collector - Emitter voltage : VCE [ V ]
0 0 100 200 Gate charge : Qg [ nC ] 300
0 400
6MBI35S-120
IGBT Modules
Switching time vs. Collector current (typ.)
Switching time vs. Collector current (typ.)
Vcc=600V,VGE=±15V, Rg=33,Tj=25oC
1000 1000
Vcc=600V,VGE=±15V, Rg=33,Tj=125oC
toff 500 toff Switching time : ton, tr, toff, tf [ nsec ] 500
Switching time : ton, tr, toff, tf [ nsec ]
ton
ton tr
tr
tf 100
100 tf
50 0 20 40 60 Collector current : Ic [ A ]
50 0 20 40 60 Collector current : Ic [ A ]
Switching time vs. Gate resistance (typ.)
Switching loss vs. Collector current (typ.)
Vcc=600V,Ic=35A,VGE=±15V, Tj=25oC
5000 10
Vcc=600V,VGE=±15V, Rg=33
E o n ( 1 2 5 C) Switching loss : Eon, Eoff, Err [ mJ/pulse ] 8
o
Switching time : ton, tr, toff, tf [ nsec ]
1000
6
E o n ( 2 5 C)
o
500 toff
4
E o f f ( 1 2 5 C)
o
ton tr 100 tf 50 10 50 100
]
Eoff(25o)C 2
o
Err(125 C) Err(25 C)
o
0 500 0 20 40 60 Gate resistance : Rg [ Collector current : Ic [ A ]
Switching loss vs. Gate resistance (typ.)
Reverse bias safe operating area
100 Eon
Vcc=600V,Ic=35A,VGE=±15V,Tj=125oC
25
+VGE=15V, -VGE33,Tj<125oC = = =
20 Switching loss : Eon, Eoff, Err [ mJ/pulse ]
80
15
Collector current : Ic [ A ] Eoff Err 10 50 100
]
60
10
40
5
20
0 500 Gate resistance : Rg [
0 0 200 400 600 800 1000 1200 1400 Collector - Emitter voltage : VCE [ V ]
6MBI35S-120
Forward current vs. Forward on voltage (typ.)
80 Tj=125 C
o
IGBT Modules
Reverse recovery characteristics (typ.)
300 Tj=25 C trr(125 C) Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ]
o o
Vcc=600V,VGE=±15V, Rg=33
60
100 trr(25 C)
o
40
20
Irr(125 C)
o
Irr(25 C)
o
0
0
1
2
3
4
10
0
10
20
30
40
50
60
Forward on voltage : VF [ V ]
Forward current : IF [ A ]
Transient thermal resistance
3
1 Thermal resistanse : Rth(j-c) [ C/W ]
FWD IGBT
o
0.1
M623
0.01 0.001 0.01 0.1 1 Pulse width : Pw [ sec ]
Outline Drawings, mm
107.5±1 4-ø6.1±0.3 2-ø5.5±0.3 16.02
17
93±0.3 15.24 15.24 15.24 15.24
13
69.6±0.3
ø2.5±0.1
27.6±0.3
32±0.3
41.91
45±1
+ 0.5 0
1.5
93±0.3 A A 1.15±0.2 ø2.1±0.1 Section A-A ø0.4
12
11
1
3.81
3.5±0.5
1.5±0.3
16.02
11.43 11.43 11.43 11.43 11.43
20.5±1
2.5±0.3
17±1
6.5±0.5
1±0.2
0.8±0.2
Shows theory dimensions
6
Others parts begin by 6m
6M-1
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