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Part: 6MBI35S-140
Category:
Discrete
-> IGBTs (Insulated Gate Bipolar Transistors)
-> IGBT Modules
Description:
Company: Fuji Electric Corp. of America
Datasheet: Download 6MBI35S-140 datasheet File size : 130 kB
Request For quote: Find where to buy 6MBI35S-140
Datasheet text preview:
6MBI35S-140
IGBT MODULE ( S series) 1400V / 35A 6 in one-package
Features
· Compact Package · P.C.Board Mount Module · Low VCE(sat)
IGBT Modules
Applications
· Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply · Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item Collector-Emitter voltage Gate-Emitter voltage Collector Continuous Tj=25°C current Tj=75°C 1ms Tj=25°C Tj=75°C 1ms Max. power dissipation (1 device) Operating temperature Storage temperature Isolation voltage *1 Screw torque Symbol VCES VGES IC IC pulse -IC -IC pulse PC Tj Tstg Vis Mounting *2 Rating 1400 ±20 50 35 100 70 35 70 240 +150 -40 to +125 AC 2500 (1min.) 3.5 Unit V V A A A A W °C °C V N·m
Equivalent Circuit Schematic
13(P)
5(Gv) 1(Gu) 2(Eu) 6(Ev)
9(Gw) 10(Ew)
16(U) 7(Gy) 3(Gx) 4(Ex) 17(N) 8(Ey)
15(V)
14(W)
11(Gz) 12(Ez)
*1:All terminals should be connected together when isolation test will be done. *2: Recommendable value : 2.5 to 3.5 N·m (M5)
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Symbol I CES I GES VGE(th) V CE(sat) C ies C oes C res ton tr t r(i) to f f tf VF t rr Characteristics Min. Typ. 5.5 7.2 2.4 3.0 4200 875 770 0.35 0.25 0.1 0.45 0.08 2.6 2.2 Conditions Max. 1.0 0.2 8.5 2.75 1.2 0.6 1.0 0.3 3.4 0.35 VGE=0V, VCE=1400V VCE=0V, VGE=±20V VCE=20V, IC=35mA Tj=25°C VGE=15V, IC=35A Tj=125°C VGE=0V VCE=10V f=1MHz VCC = 8 0 0 V IC=35A V GE = ± 1 5 V RG=33 Tj=25°C Tj=125°C IF=35A IF=35A, VGE=0V Unit mA µA V V pF
µs
Turn-off time Diode forward on voltage Reverse recovery time
V µs
Thermal resistance characteristics
Item Symbol Rth(j-c) Rth(j-c) Rth(c-f)*2 Characteristics Min. Typ. 0.05 Conditions Max. 0.52 0.90 IGBT FWD the base to cooling fin °C/W °C/W °C/W Unit
Thermal resistance
*2 : This is the value which is defined mounting on the additional cooling fin with thermal compound
6MBI35S-140
Characteristics
[ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 25°C (typ.)
IGBT Module
80
80
[ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 125°C (typ.) VGE= 20V 15V 12V
1 VGE= 20V 5V 12V
60
60
Collector current : Ic [ A ]
Collector current : Ic [ A ]
10V 40
10V 40
20
20
8V 0 0 1 2 3 4 5 0 0 1 2 3 4
8V 5
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
80
[ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) Tj= 25°C Tj= 125°C
10
[ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25°C (typ.)
8 60
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
6
40
4 Ic= 70A 2 Ic= 35A Ic= 17.5A
20
0
0
1
2
3
4
5
0
5
10
15
20
25
Collector - Emitter voltage : VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
10000
[ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C
[ Inverter ] Dynamic Gate charge (typ.) Vcc=800V, Ic=35A, Tj= 25°C 1000 25
Capacitance : Cies, Coes, Cres [ pF ]
Collector - Emitter voltage : VCE [ V ]
600
15
1000 Coes
400
10
200
5
Cres
100
0
5
10
15
20
25
30
35
0
0
100
200 Gate charge : Qg [ nC ]
300
0 400
Collector - Emitter voltage : VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
Cies
800
20
6MBI35S-140
IGBT Module
1000
[ Inverter ] Switching time vs. Collector current (typ.) Vcc=800V, VGE=±15V, Rg= 33ohm, Tj= 25°C
1000
[ Inverter ] Switching time vs. Collector current (typ.) Vcc=800V, VGE=±15V, Rg= 33ohm, Tj= 125°C
toff
Switching time : ton, tr, toff, tf [ nsec ]
500
Switching time : ton, tr, toff, tf [ nsec ]
toff
500
ton tr
ton tr
100 tf 50
100 tf
0
20
40
60
50
0
20
40
60
Collector current : Ic [ A ]
Collector current : Ic [ A ]
[ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=800V, Ic=35A, VGE=±15V, Tj= 25°C 5000 14
[ Inverter ] Switching loss vs. Collector current (typ.) Vcc=800V, VGE=±15V, Rg=33ohm Eon(125°C)
12
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Switching time : ton, tr, toff, tf [ nsec ]
10 Eon(25°C) 8 Eoff(125°C) Eoff(25°C) 4 Err(125°C) 2 Err(25°C)
1000
500 toff
6
ton 100 tr tf 50 10 50 100 500
0
0
20
40
60
Gate resistance : Rg [ohm]
Collector current : Ic [ A ]
[ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=800V, Ic=35A, VGE=±15V, Tj= 125°C 25 Eon 100
[ Inverter ] Reverse bias safe operating area +VGE=15V, -VGE=33ohm, Tj=<125°C
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
20
80
15
Collector current : Ic [ A ]
500
60
10 Eoff
40
5
20
Err 0 10 50 100 0 0 200 400 600 800 1000 1200 1400 1600
Gate resistance : Rg [ohm]
Collector - Emitter voltage : VCE [ V ]
6MBI35S-140
Forward current vs. Forward on voltage (typ.) 80 Tj=125°C Tj=25°C 300
IGBT Module
Reverse recovery characteristics (typ.) Vcc=800V, VGE=±15V, Rg=33ohm
Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ]
60
trr(125°C) 100 trr(25°C)
Forward current : IF [ A ]
40
Irr(125°C)
20
Irr(25°C)
0
0
1
2 Forward on voltage : VF [ V ]
3
4
10
0
10
20
30
40
50
60
Forward current : IF [ A ]
Transient thermal resistance 3
1
FWD IGBT
Thermal resistanse : Rth(j-c) [ °C/W ]
0.1
0.01 0.001
0.01
0.1
1
Pulse width : Pw [ sec ]
M623
Outline Drawings, mm
107.5±1 4-ø6.1±0.3 2-ø5.5±0.3 16.02
17
93±0.3 15.24 15.24 15.24 15.24
13
69.6±0.3
ø2.5±0.1
27.6±0.3
32±0.3
41.91
45±1
+ 0.5 0
1.5
93±0.3 A A 1.15±0.2 ø2.1±0.1 Section A-A ø0.4
12
11
1
3.81
3.5±0.5
1.5±0.3
16.02
11.43 11.43 11.43 11.43 11.43
20.5±1
2.5±0.3
17±1
6.5±0.5
mass : 180g
1±0.2
0.8±0.2
Shows theory dimensions
6
Others parts begin by 6m
6M-1
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