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Details, datasheet, quote on part number:6R1MBI100P-160
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Datasheet text preview:
6R1MBi100P-160
Diode Module with Brake
Diode:1600V / 100A, IGBT:1400A/75A
Features
· Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit
Diode Module
Applications
· Inverter for Motor Drive · AC and DC Servo Drive Amplifier · Uninterruptible Power Supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless without specified)
Item Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average output current One cycle surge current I2t Operation junction temperature Collector-Emitter voltage Gate-Emitter voltage Collector current Symbol VRRM V RSM IO IFSM I2t Tj VC E S VGES IC ICP Collector power disspation Repetitive peak reverse voltage Operation junction temperature Storage junction temperature Isolation voltage Mounting screw torque PC VRRM Tj Tstg Viso 50Hz/60Hz sine wave Tc=110°C From rated load From rated load Condition Rating 1600 1760 100 1000 4000 -40 to +125 1400 ±20 75 50 150 100 360 1400 +150 -40 to +125 2500 2.0 to 2.5 Unit V V A A A 2s °C V V A A W V °C °C V N·m
Converte
DC 1ms 1 device
Tc=25°C Tc=75°C Tc=25°C Tc=75°C
Brake
AC : 1 minute M 5 screw
Electrical characteristics (Tj=25°C unless otherwise specified)
Item Fofward voltage Reverse current Zero gate voltage Collector current Gate-Emitter leakage current Collector-Emitter saturation voltage Turn-on time Turn-off time Reverse current
Co.
Symbol V FM IRRM ICES IGES V CE(sat) ton tr toff tf IRRM
Condition Tj=25°C, IFM=100A Tj=150°C, VR=VRRM VGE=0V. VCE=1400V VCE =0V. VGE=±20V VGE=15V. IC=50A Vcc=800V Ic=50A VG E = ± 1 5 V RG=25ohm
Min.
Typ.
2.4 0.35 0.25 0.45 0.08
Max. 1.30 20 1.0 200 2.8 1.2 0.6 1.0 0.3 1.0
Unit V mA mA nA V µs
Brake
mA
Thermal characteristics
Item Thermal resistance Symbol Rth(j-c) Condition Converter Per total loss Per each device Brake IGBT (1 device) with thermal compound Min. Typ. Max. 0.14 0.84 0.55 0.08 Unit °C/W
Thermal Resistance(Case to fine)
Rth(c-f)
°C/W
Diode Module
Forward Characteristics
300
6R1MBi100P-160
O u tp u t C u r r e n t - T o ta l L o s s
100 90 Fo r w a r d Current V F( V ) 80 70 60 50 40 30 20 10 0 0.5 0.6
max
250
typ
200
150deg
Total Loss (W)
150
25deg
100
50
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
0 0 50 100 150
O u t p i t C u r r e n t Io ( A )
Forward Current IF(A)
O u tp u t C u r r e n t - C a s e T e m p e r a tu r e
130 120 110 100 90 80 70 60 50 0 50 100
S u rg e C u rre n t
1200
1000
Case Tempreture Tc (deg.C)
Peak Surge Current IFSM (A)
800
600
400
200
0 0 .0 1
0 .1
1
O u t p u t C u r r e n t Io ( A )
T im
T r a n s i e n t The r m a l Im p e d a n c e
1 10
[ B r a k e ] Tra n s i e n t The r m a l Im p e d a n c e
FW D
Zth(j-c)(t) (deg.C/W)
0 .1
1
Zth(j-c)(deg.C/w)
IG B T 0 .1
0 .0 1
0 .0 0 1 0 .0 0 1
0 .0 1
0 .1
1
10
0 .0 1 0 .0 0 1
0 .0 1
0 .1
1
10
Tim e
T i m e (s e c )
Diode Module
[ Brake ] Collector current vs. Collector-Emitter voltage Tj= 25°C (typ.)
120 120
6R1MBi100P-160
[ Brake ] Collector current vs. Collector-Emitter voltage Tj= 125°C (typ.)
100
VG E= 20V 15V 12V
100
VG E= 20V
15V 12V
Collector current : Ic [ A ]
80 10V 60
Collector current : Ic [ A ]
80 10V 60
40
40
20 8V 0 0 1 2 3 4 5
20
8V
0 0 1 2 3 4 5
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
[ Brake ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.)
120 10
[ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25°C (typ.)
100
Tj = 25°C
Tj = 125°C
80
Collector - Emitter voltage : VCE [ V ]
8
Collector current : Ic [ A ]
6
60
4 Ic= 100A 2 Ic= 50A Ic= 25A
40
20
0 0 1 2 3 4 5
0 5 10 15 20 25
Collector - Emitter voltage : VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
[ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C
20000 1000
[ Brake ] Dynamic Gate charge (typ.) Vcc=800V, Ic=50A, Tj= 25°C
25
10000
Capacitance : Cies, Coes, Cres [ pF ]
Collector - Emitter voltage : VCE [ V ]
800
20
Cies
600
15
1000
Coes
400
10
C re s
200
5
100 0 5 10 15 20 25 30 35
0 0 100 200 300 400
0 500
Collector - Emitter voltage : VCE [ V ]
Gate charge : Qg [ nC ]
Gate - Emitter voltage : VGE [ V ]
Diode Module
Outline Drawings, mm
6R1MBi100P-160
90 78.5 4- Ø 6.1 C3 2- Ø5.5 11.75 7 14 7 0.5 21 7
+
23.5 16
-
G
E
C
11 11 32
K
11.75
Ø 2.5
14
14
28.5
3
6
1.5
3.4
JAPAN
Ø 2.1
2 x t1
R1
6R1MBi100P-160
Equivalent Circuit Schematic
K
G E
13
C
17
20.4
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