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Part: 6R1MBI75P-160
Category:
Discrete
-> Diodes & Rectifiers
-> Modules
-> General Purpose Diode Modules
Description:
Company: Fuji Electric Corp. of America
Datasheet: Download 6R1MBI75P-160 datasheet File size : 43 kB
Request For quote: Find where to buy 6R1MBI75P-160
Datasheet text preview:
6R1MBi75P-160
Diode Module with Brake
Diode:1600V / 75A, IGBT:1400A/50A
Features
· Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit
Diode Module
Applications
· Inverter for Motor Drive · AC and DC Servo Drive Amplifier · Uninterruptible Power Supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless without specified)
Item Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average output current One cycle surge current I2t Operation junction temperature Collector-Emitter voltage Gate-Emitter voltage Collector current Symbol VRRM V RSM IO IFSM I2t Tj VC E S VGES IC ICP Collector power disspation Repetitive peak reverse voltage Operation junction temperature Storage junction temperature Isolation voltage Mounting screw torque PC VRRM Tj Tstg Viso 50Hz/60Hz sine wave Tc=115°C From rated load From rated load Condition Rating 1600 1760 75 600 1440 -40 to +125 1400 ±20 50 35 100 70 240 1400 +150 -40 to +125 3000 2.0 to 2.5 Unit V V A A A 2s °C V V A A W V °C °C V N·m
Converte
DC 1ms 1 device
Tc=25°C Tc=75°C Tc=25°C Tc=75°C
Brake
AC : 1 minute M 5 screw
Electrical characteristics (Tj=25°C unless otherwise specified)
Item Fofward voltage Reverse current Zero gate voltage Collector current Gate-Emitter leakage current Collector-Emitter saturation voltage Turn-on time Turn-off time Reverse current
Co.
Symbol V FM IRRM ICES IGES V CE(sat) ton tr toff tf IRRM
Condition Tj=25°C, IFM=75A Tj=150°C, VR=VRRM VGE=0V. VCE=1400V VCE =0V. VGE=±20V VGE=15V. IC=35A Vcc=800V Ic=35A VG E = ± 1 5 V RG=33ohm
Min.
Typ.
2.4 0.35 0.25 0.45 0.08
Max. 1.35 15 1.0 200 2.8 1.2 0.6 1.0 0.3 1.0
Unit V mA mA nA V µs
Brake
mA
Thermal characteristics
Item Thermal resistance Symbol Rth(j-c) Condition Converter Per total loss Per each device Brake IGBT (1 device) with thermal compound Min. Typ. Max. 0.16 0.96 0.70 0.08 Unit °C/W
Thermal Resistance(Case to fine)
Rth(c-f)
°C/W
Diode Module
Forward Characteristics
250
6R1MBi75P-160
O u tp u t C u r r e n t - T o ta l L o s s
80 70
max typ
200
F o rw a rd Current IF (A )
60 50 40 30 20
50
150deg 25deg
Total Loss (W)
1.4
150
100
10 0 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
0 0 20 40 60 80
Forward Voltage
O u t p u t C u r r e n t Io (A )
O u tp u t C u r r e n t - C a s e T e m p e r a tu r e
130 120
S u rg e C u rre n t
700
600
Case Temperature Tc(deg.C)
110 100 90 80 70 60 50 0 20 40 60 80
Peak Surge Current IFSM(A)
500
400
300
200
100
0 0 .0 1
0 .1
1
O u t p u t C u r r e n t Io ( A )
T im e
Tra ns i e nt Thermal Impedance
1
[ B r a k e ] Tra ns i e nt The r m a l Im p e d a n c e
10
FW D
Zth(j-c)(t) (deg.C/W)
Zth(j-c)(deg.C/W)
0 .1
1
IG B T
0 .0 1
0 .1
0 .0 0 1 0 .0 0 1
0 .0 1
0 .1
1
10
0 .0 1 0 .0 0 1
0 .0 1
0 .1
1
10
Ti m e ( )
Ti m e (s e c )
Diode Module
[ Brake ] Collector current vs. Collector-Emitter voltage Tj= 25°C (typ.)
80 VGE = 20V 15V 12V 80
6R1MBi75P-160
[ Brake ] Collector current vs. Collector-Emitter voltage Tj= 125°C (typ.)
VGE = 20V 15V 12V
60
60
Collector current : Ic [ A ]
Collector current : Ic [ A ]
10V 40
10V 40
20
20
8V 0 0 1 2 3 4 5 0 0 1 2 3 4
8V
5
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
80
[ Brake ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.)
Tj = 25°C Tj = 125°C
[ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25°C (typ.)
10
60
Collector - Emitter voltage : VCE [ V ]
8
Collector current : Ic [ A ]
6
40
4 Ic= 70A 2 Ic= 35A Ic= 17.5A
20
0 0 1 2 3 4 5
0 5 10 15 20 25
Collector - Emitter voltage : VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
10000
[ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C
1000
[ Brake ] Dynamic Gate charge (typ.) Vcc=800V, Ic=35A, Tj= 25°C
25
Capacitance : Cies, Coes, Cres [ pF ]
600
15
1000 Coes
400
10
200
5
Cres
100 0 5 10 15 20 25 30 35
0 0 100 200 300
0 400
Collector - Emitter voltage : VCE [ V ]
Gate charge : Qg [ nC ]
Gate - Emitter voltage : VGE [ V ]
Cies
Collector - Emitter voltage : VCE [ V ]
800
20
Diode Module
Outline Drawings, mm
6R1MBi75P-160
90 78.5 4- Ø 6.1 C3 2- Ø5.5 11.75 7 14 7 0.5 21 7
+
23.5 16
-
G
E
C
11 11 32
K
11.75
Ø 2.5
14
14
28.5
3
6
1.5
3.4
JAPAN
Ø 2.1
2 x t1
R1
6R1MBBi00P--160 R1M i175P 160
Equivalent Circuit Schematic
K
C
G E
13
17
20.4
Others parts begin by 6r
6R-1
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