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Details, datasheet, quote on part number:ESAC25-02C
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Datasheet text preview:
ESAC25(C,N,D) (10A)
FAST RECOVERY DIODE
(200V to 400V / 10A)
Outline drawings, mm
10+0.5 0 2.7±0.1 Ø3.6±0.2 4.5±0.2 1.32 6.4±0.2 3.7±0.2 14 -0.5 0 1.2 0.4 0.8 2.54 5.08 2.7 15±0.2 2
Features
High voltage by mesa design High reliability
JEDEC EIAJ
TO-220AB SC-46
Connection diagram
ESAC25C 1 2 ESAC25N 1 2 3 3
Applications
High speed switching
Maximum ratings and characteristics
Absolute maximum ratings
Item Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average output current Surge current Operating junction temperature Storage temperature Symbol VRRM VRSM IO IFSM Tj Tstg Conditions
ESAC25-
D
1
3
Rating -02 200 250 -04 400 450 10* 70 -40 to +150 -40 to +150
Unit V V A A °C °C
Square wave, duty=1/2, Tc=106°C Sine wave 10ms
*Average forward current of centertap full wave connection
Electrical characteristics (Ta=25°C Unless otherwise specified )
Item Forward voltage drop Reverse current Reverse recovery time Thermal resistance Symbol VFM IRRM t rr Rth(j-c) Conditions IFM=2.5A VR=VRRM IF=0.1A, IR=0.1A Junction to case Max. 1.3 50 0.4 3.0* Unit V µA µs °C/W
(200V to 400V / 10A )
Characteristics
Forward characteristics
300 10 5 3 100 30
ESAC25(C,N,D)(10A)
Reverse characteristics
IF [A]
1 0.5
IR 10 [µA]
3 1 0.3 0.1
0.1 0 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0.05
0
100
200
300
400
500
VF [V]
VR [V]
Forward power dissipation
12 140 10 120 8
Output current-case temperature
Tc 100 WF [W]
6
[°C]
80
4 60 2 40 0 0 1 2 3 4 5 6 0 2 4 6 8 10 12
Io [A]
Io [A]
Junction capacitance characteristics
100 300 50 30
Surge capability
Cj [pF]
10
100
IFSM [A]
50 30 5 3 5 10 30 50 100
10 1 3 5 10 30
VR [V]
[time] (at 50Hz)
(200V to 400V / 10A )
Transient thermal impedance
ESAC25(C,N,D)(10A)
100
[°C/W]
10
1 10-3
10-2
10-1
100
101
t [sec.]
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