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Details, datasheet, quote on part number:ESAC33-02D
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Datasheet text preview:
ESAC33(C,N,D) (8A)
FAST RECOVERY DIODE
10+0.5 0 2.7±0.1
(200V / 8A)
Outline drawings, mm
Ø3.6±0.2 4.5±0.2 1.32 6.4±0.2 14 -0.5 0 3.7±0.2 0.4 15±0.2 1.2 0.8 2.54 5.08 2.7 2
Features
High voltage by mesa design High reliability
JEDEC EIAJ
TO-220AB SC-46
Connection diagram
ESAC33C 1 2 ESAC33N 1 2 3 3
Applications
High speed switching
Maximum ratings and characteristics
Absolute maximum ratings
Item Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average output current Surge current Operating junction temperature Storage temperature Symbol VRRM VRSM IO IFSM Tj Tstg Conditions
ESAC33-
D
1
3
Rating -02 200 200
Unit V V A A °C °C
Square wave, duty=1/2, Tc=98°C Sine wave 10ms
8* 30 -40 to +150 -40 to +150
*Average forward current of centertap full wave connection
Electrical characteristics (Ta=25°C Unless otherwise specified )
Item Forward voltage drop Reverse current Reverse recovery time Thermal resistance Symbol VFM IRRM t rr Rth(j-c) Conditions IFM=2.0A VR=VRRM IF=0.1A, IR=0.1A Junction to case Max. 1.4 500 100 3.0 Unit V µA ns °C/W
(200V / 8A )
Characteristics
Forward characteristics
10 10 5 1.0
ESAC33(C,N,D)(8A)
Reverse characteristics
IF [A]
3
IR [µA]
0.1
1 0.5
0.01 0.005 0.1 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 0 100 200 300
VF [V]
VR [V]
Forward power dissipation
12 140 10 120 8
Output current-case temperature
WF [W]
6 4
Tc 100 [°C]
80 60
2 40 0 0 1 2 3 4 5 6 0 2 4 6 8 10 12
Io [A]
Io [A]
Junction capacitance characteristics
100 30 50 30 10
Surge capability
Cj [pF]
10
IFSM [A]
5 3 5 3 5 10 30 50 100 1 1 3 5 10 30
VR [V]
[time] (at 50Hz)
(200V / 8A )
Transient thermal impedance
ESAC33(C,N,D)(8A)
10
[°C/W]
1
0.1 10-3
10-2
10-1
100
101
102
t [sec.]
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