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Details, datasheet, quote on part number:ET383
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| Part: | ET383 |
| Category: | Discrete => Transistors => Bipolar => Power => General Purpose => NPN |
| Description: | |
| Company: | Fuji Electric Corp. of America |
| Datasheet: | Download ET383 datasheet File size : 132 kB |
| Request For quote: | Find where to buy ET383
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Datasheet text preview:
ET383
TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING
FUJI POWER TRANSISTOR
Outline Drawings
TO-3P
Features
High voltage,High speed switching High reliability
Applications
Switching regulators Ultrasonic generators High frequency invertors General purpose power amplifiers
JEDEC EIAJ
SC-65
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Base current Collector power disspation Operating junction temperature Storage temperature Symbol VC B O VC E O VEBO IC IB PC Tj Tstg Ratings 1000 1000 10 5 3 80 +150 -55 to +150 Unit V V V A A W °C °C
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Base leakage current Emitter-Base leakage current D.C. current gain Collector-Emitter saturation voltage Base-Emitter saturation voltage *1 Switching time Symbol VCBO VCER VEBO ICBO IEBO hFE V CE(Sat) VBE(Sat) ton tstg tf Test Conditions ICBO = 1mA IC = 1A, RBE = 15 ohm IEBO = 1mA VCBO = 1000V VEBO = 10V IC = 2A, VCE = 5V IC = 2A, IB = 400mA IC = 3A, IB1 = 600mA IB2 = -1200mA, RL = 20 ohm Pw = 20µs Duty=<2%
Min.
1000 1000 10
Typ.
Max.
Units
V V V mA mA V V µs µs µs
1.0 1.0 10 1.0 1.5 1.0 4.0 0.8
Thermal characteristics
Item Thermal resistance Symbol Rth(j-c) Test Conditions Junction to case
Min.
Typ.
Max.
1.5
Units
°C/W
1
ET383
Characteristics
FUJI POWER TRANSISTOR
Collector-Emitter voltage VCE[V]
Base current IB[A]
D.C. current gain hFE
Collector current IC[A]
Collector Output Characteristics
DC Current Gain
Collector current IC[A]
Saturation voltage VCE(sat), VBE(sat)[V]
D.C. current gain hFE
DC Current Gain
Collector current IC[A]
Base and Collector Saturation Voltage
*1 Switching Time Test Circuit
2
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