Datasheet text preview:
YG802C09R
SCHOTTKY BARRIER DIODE
(90V / 10A TO-22OF15)
Outline Drawings
10±0.5 ø3.2
+0.2 -0.1
4.5±0.2 2.7±0.2 6.3
2.7±0.2 3.7±0.2
1.2±0.2 13Min
Features
Low VF Super high speed switching. High reliability by planer design.
15±0.3
0.7±0.2 2.54±0.2
0.6
+0.2 -0
2.7±0.2
JEDEC EIAJ
SC-67
Applications
High speed power switching.
Connection Diagram
2 1 3
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Item Repetitive peak reverse voltage Repetitive peak surge reverse voltage Isolating voltage Average output current Suege current Operating junction temperature Storage temperature Symbol VRRM VRSM Viso IO IFSM Tj Tstg tw=500ns, duty=1/40 Terminals to Case, AC. 1min. duty=1/2, Tc=102°C Square wave Sine wave 10ms Conditions
Rating 90 100 1500 10* 80 -40 to +150 -40 to +150
Unit V V V A A °C °C
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Item Forward voltage drop ** Reverse current ** Symbol VF IR Rth(j-c) Conditions IF=4.0A VR=VRRM Junction to case
* Out put current of centertap full wave connection.
Max. 0.9 5.0 3.5 Unit V mA °C/W
Thermal resistance
** Rating per element
Mechanical Characteristics
Mounting torque Weight Recommended torque 0.3 to 0.5 2.3 N·m g
A-426
(90V / 10A TO-22OF15)
Characteristics
Forward Characteristic (typ.)
YG802C09R
Reverse Characteristic
10
2
(typ.)
Tj=150
o
10
Reverse Current (mA)
10
1
Tj=125
o
Forward Current (A)
Tj=100 C
o
Tj=150 o Tj=125 o Tj=100 C o Tj=25 C
o
10
0
1
10
-1
IF
10
-2
Tj=25 C
o
IR
0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
10
-3
0
10
20
30
40
50
60
70
80
90
100 110
VF
Forward Voltage (V)
VR
Reverse Voltage (V)
Forward Power Dissipation
8
20
Reverse Power Dissipation
DC
(W)
7 6 5
(W)
Io
360°
Forward Power Dissipation
Reverse Power Dissipation
360°
15
VR
Square wave =60
o
4 3 2 1
Square wave =120
o
Sine wave =180 o Square wave =180 DC
o
10
=180
o
5
WF
Per 1element
0 0.0
PR
5.5
0 0 20 40 60 80 100
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Io
Average Forward Current
(A)
VR
Reverse Voltage
(V)
160 150 140
Current Derating (Io-Tc)
1000
Junction Capacitance Characteristic (typ.)
Case Temperature ( C)
130
DC
120 110 100 90 80 70 60 50 0 2 4 6 8 10 12 14
360° Io
VR=50V
Sine wave =180
o
Junction Capacitance (pF) Cj
o
100
Square wave =180 Square wave =120
o
o
Square wave =60
o
Tc
10 10 100
Io
Average Output Current
(A)
VR
Reverse Voltage (V)
:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
(90V / 10A TO-22OF15)
YG802C09R
1000
Surge Capability
Peak Half - Wave Current (A) IFSM
100
10 1 10 100
Number of Cycles at 50Hz
10
2
Transient Thermal Impedance
Transient Thermal Impedance ( C/W)
O
10
1
10
0
10
-1
10
-2
10
-1
10
0
10
1
10
2
t
Time
(sec.)
