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Details, datasheet, quote on part number:YG802C10R
 
 
Part:YG802C10R
Category:Discrete => Diodes & Rectifiers => Schottky Diodes
Description:
Company:Fuji Electric Corp. of America
Datasheet:Download YG802C10R datasheet   File size : 52 kB
Request For quote:  Find where to buy YG802C10R
 



Datasheet text preview:
YG802C10R
SCHOTTKY BARRIER DIODE
(100V / 10A TO-22OF15)
Outline Drawings
10±0.5 ø3.2
+0.2 -0.1
4.5±0.2 2.7±0.2
6.3
2.7±0.2 3.7±0.2
1.2±0.2
13Min
Features
Low VF Super high speed switching. High reliability by planer design.
15±0.3
0.7±0.2 2.54±0.2
0.6
+0.2 -0
2.7±0.2
JEDEC EIAJ
SC-67
Applications
High speed power switching.
Connection Diagram
2 1 3
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Item Repetitive peak reverse voltage Repetitive peak surge reverse voltage Isolating voltage Average output current Suege current Operating junction temperature Storage temperature Symbol VRRM VRSM Viso IO IFSM Tj Tstg tw=500ns, duty=1/40 Terminals to Case, AC. 1min. duty=1/2, Tc=102°C Square wave Sine wave 10ms Conditions
Rating 100 100 1500 10* 80 +150 -40 to +150
Unit V V V A A °C °C
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Item Forward voltage drop ** Reverse current ** Thermal resistance Symbol VF IR Rth(j-c) Conditions IF=3.0A VR=VRRM Junction to case
* Out put current of centertap full wave connection.
Max. 0.8 1.2 2.5 Unit V mA °C/W
Mechanical Characteristics
Mounting torque Weight Recommended torque 0.3 to 0.5 2.3
** Rating per element
N·m g
(100V / 10A TO-22OF15)
Characteristics
Forward Characteristic (typ.)
10
2
YG802C10R
Reverse Characteristic (typ.)
Tj=150 C
o
10 10
1
Tj=125 C
o
Reverse Current (mA)
(A)
Tj=100 C 10
0
o
Forward Current
Tj=150 C Tj=125 C Tj=100 C Tj=25 C 1
o o o
o
10
-1
Tj=25 C
o
IF
IR
10
-2
0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
10
-3
0
10
20
30
40
50
60
70
80
90
100
110
VF
Forward Voltage
(V)
VR
Reverse Voltage
(V)
Forward Power Dissipation
8
Io
Reverse Power Dissipation
18 DC 16
360° VR
7
(W)
(W)
6
14
360°
Forward Power Dissipation
Reverse Power Dissipation
12
5 Square wave =60 4 Square wave =120 Sine wave =180 Square wave =180 3
o o o o
10
=180
o
8
DC
6
2
4
WF
1 Per 1element 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
PR
2
0 0 10 20 30 40 50 60 70 80 90 100 110 120
Io
Average Forward Current
(A)
VR
Reverse Voltage
(V)
Current Derating (Io-Tc)
160 150 140 130 DC 120 110 100 90 80 1000
Junction Capacitance Characteristic (typ.)
( C)
o
Case Temperature
Junction Capacitance Cj
(pF)
Sine wave =180
o
100
Square wave =180
o
360° Io
VR=50V
Square wave =120
o
Tc
70 60 0 2 4 6 8
Square wave =60
o
10 10 12 14 10 100
Io
Average Output Current
(A)
:Conduction angle of forward current for each rectifier element
VR
Reverse Voltage
(V)
Io:Output current of center-tap full wave connection
(100V / 10A TO-22OF15)
Surge Capability
1000
YG802C10R
Peak Half - Wave Current I FSM
(A)
100 10 1 10 100
Number of Cycles at 50Hz
Transient Thermal Impedance
10
2
( C/W) Transient Thermal Impedance
10
1
o
10
0
10
-1
10
-2
10
-1
10
0
10
1
10
2
t
Time
(sec.)