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Details, datasheet, quote on part number:FSX017WF
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Datasheet text preview:
FSX017WF
General Purpose GaAs FET FEATURES
· · · · Medium Power Output: P1dB=21.5dB (Typ.)@8.0GHz High Power Gain: G1dB=11dB (Typ.)@8.0GHz Hermetic Metal/Ceramic Package Proven Reliability
DESCRIPTION
The FSX017WF is a general purpose GaAs FET designed for medium power applications up to the 12GHz. These devices have a wide dynamic range and are suitable for use in medium power, wide band, linear drive amplifiers or oscillators. Fujitsu's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS Ptot Tstg Tch Condition Rating 12 -5 1.0 -65 to +175 175 Unit V V W °C °C
Tc = 25°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain - source operating voltage (VDS) should not exceed 8 volts. 2. The forward and reverse gate currents should not exceed 0.7 and -0.1 mA respectively with gate resistance of 2000. 3. The operating channel temperature (Tch) should not exceed 145°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Noise Figure Associated Gain Symbol IDSS gm Vp VGSO NF Gas P1dB VDS = 3V, IDS = 10mA f = 8GHz Test Conditions VDS = 3V, VGS = 0V VDS = 3V, IDS = 27mA VDS = 3V, IDS = 2.7mA IGS = -2.7µA Min. 35 -0.7 -5.0 Limit Typ. Max. 55 50 -1.2 2.5 10.5 21.5 21.5 20.5 15.0 11.0 7.5 120 75 -1.7 150 Unit mA mS V V dB dB dBm dBm dBm dB dB dB °C/W
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P. Thermal Resistance CASE STYLE: WF
G1dB Rth
f = 4GHz VDS = 8V, f = 8GHz 20.5 IDS = 0.7IDSS f = 12GHz f = 4GHz VDS = 8V, f = 8GHz 10.0 IDS = 0.7IDSS f = 12GHz Channel to Case -
G.C.P.: Gain Compression Point
Edition 1.2 July 1999
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FSX017WF
General Purpose GaAs FET
POWER DERATING CURVE
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 70
Total Power Dissipation (W)
1.0 0.8 0.6 0.4 0.2 0 Drain Current (mA) 60 50 40 30 20 10 50 100 150 Case Temperature (°C) 200 2 4 6 8
VGS = 0V -0.2V -0.4V -0.6V -0.8V -1.0V -1.2V
10
Drain-Source Voltage (V)
OUTPUT POWER vs. INPUT POWER 22 VDS = 8V 20 Output Power (dBm) 18 16
f=4GHz 8GHz 12GHz
add
P1dB vs. VDS
f=4GHz
8GHz 12GHz
IDS = 0.5 IDSS
22
Pout
f = 8GHz IDS = 0.7 IDSS
P1dB (dBm)
20 18 16 14
12 10 8 -4 -2 0
40 20
2
4
6
8 10 12
add (%)
14
60
4
5
6
7
8
Input Power (dBm)
Drain-Source Voltage (V)
2
FSX017WF
General Purpose GaAs FET
+j50 +j25
18 12 14
S11 S22 +j100
2
+90°
S21 S12
20 4
+j10
16 8 10
10
+j250
16 0.5GHz 250
20
6
20 25 50 18
14
20 18 18
2
4
8
0
180°
5
4
0.5GHz 0.5GHz 2
SCALE FOR |S21|
0.5GHz 8 12 10 12
0°
-j10
12
6 10 8 4 6
-j250
SCALE FOR |S12|
16
14 0.1
-j25
4
-j100
2
0.2
-j50
-90°
FREQUENCY (MHZ)
500 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 12000 13000 14000 15000
S11 MAG
.994 .982 .936 .891 .855 .817 .778 .738 .705 .693 .679 .655 .631 .610 .573 .503
ANG
-17.5 -33.7 -66.2 -92.7 -112.9 -131.0 -150.4 -172.0 167.8 150.3 135.1 117.2 96.4 78.9 64.6 48.0
S-PARAMETERS VDS =8V, IDS = 35mA S21 S12 MAG ANG MAG ANG
4.666 4.499 4.066 3.486 3.001 2.706 2.555 2.407 2.206 2.020 1.894 1.842 1.750 1.595 1.422 1.298 165.0 151.2 124.2 101.1 82.3 66.1 49.2 30.3 12.0 -5.3 -20.9 -38.1 -57.3 -76.9 -94.9 -111.5 .007 .013 .022 .026 .027 .026 .026 .026 .022 .025 .028 .035 .042 .047 .050 .058 75.3 69.9 47.3 30.2 17.5 7.6 0.0 -12.8 -20.7 -24.2 -31.8 -43.3 -60.2 -79.6 -96.0 -113.5
S22 MAG
.826 .819 .808 .799 .796 .795 .791 .778 .774 .777 .780 .791 .798 .809 .830 .846
ANG
-8.4 -17.3 -33.3 -47.7 -59.2 -67.5 -76.3 -88.8 -102.1 -115.7 -127.6 -140.5 -155.2 -173.0 172.1 163.3
Download S-Parameters, click here
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