|
Details, datasheet, quote on part number:FSX017X
| |
Datasheet text preview:
FSX017X
GaAs FET & HEMT Chips FEATURES
· Medium Power Output: P1dB=21.5dBm(Typ.)@8.0GHz · High Power Gain: G1dB=11dB(Typ.)@8.0GHz · Proven Reliability
Drain
DESCRIPTION
The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic range and are suitable for use in medium power, wide band, linear drive amplifiers or oscillators. Fujitsu's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS Ptot Tstg Tch Tc = 25°C Condition
Source
Source
Gate
Rating 12 -5 1.0 -65 to +175 175
Unit V V W °C °C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain - source operating voltage (VDS) should not exceed 8 volts. 2. The forward and reverse gate currents should not exceed 0.7 and -0.1 mA respectively with gate resistance of 2000. 3. The operating channel temperature (Tch) should not exceed 145°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Noise Figure Associated Gain Symbol IDSS gm Vp VGSO NF Gas Test Conditions VDS = 3V, VGS = 0V VDS = 3V, IDS = 27mA VDS = 3V, IDS = 2.7mA IGS = -2.7µA VDS = 3V, IDS = 10mA f = 8GHz Min. 35 -0.7 -5.0 Limit Typ. Max. 55 75 50 -1.2 2.5 10.5 21.5 21.5 20.5 15.0 11.0 7.5 120 -1.7 150 Unit mA mS V V dB dB dBm dBm dBm dB dB dB °C/W
Output Power at 1 dB G.C.P.
P1dB
f = 4GHz VDS = 8V, f = 8GHz 20.5 IDS = 0.7 IDSS f = 12GHz f = 4GHz VDS = 8V, f = 8GHz 10.0 IDS = 0.7 IDSS f = 12GHz Channel to Case -
Power Gain at 1 dB G.C.P. Thermal Resistance
G1dB Rth
Note: RF parameter sample size 10pcs. criteria (accept/reject)=(2/3) The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability.
G.C.P.: Gain Compression Point
Edition 1.2 July 1999
1
FSX017X
GaAs FET & HEMT Chips
POWER DERATING CURVE DRAIN CURRENT vs. DRAIN-SOURCE VOLTAG
Total Power Dissipation (W)
1.0 0.8 0.6 0.4 0.2
70
Drain Current (mA)
60 50 40 30 20 10 2 4 6
VGS = 0V -0.2V -0.4V -0.6V -0.8V -1.0V -1.2V 8 10
0
50
100
150
200
Case Temperature (°C)
Drain-Source Voltage (V)
OUTPUT POWER vs. INPUT POWER
22 VDS = 8V 20
f=4GHz 8GHz 12GHz
P1dB vs. VDS
IDS = 0.7I DSS
22 20 18 16 14
f = 8GHz IDS = 0.7 IDSS
Output Power (dBm)
18 16
f=4GHz 8GHz 12GHz
12 10 8 -4 -2 0
add
40 20
add (%)
14
60
P1dB (dBm)
Pout
2
4
6
8
10 12
4
5
6
7
8
Input Power (dBm)
Drain-Source Voltage (V)
2
FSX017X
GaAs FET & HEMT Chips
S-PARAMETERS VDS = 8V, IDS = 35mA FREQUENCY (MHZ)
1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 12000 13000 14000 15000 16000 17000 18000 19000 20000
S11 MAG
.989 .960 .925 .890 .860 .833 .814 .799 .788 .780 .773 .768 .762 .759 .759 .759 .764 .766 .771 .778
S21 ANG
-24.0 -46.5 -66.6 -84.0 -99.0 -111.8 -122.6 -132.1 -140.6 -148.1 -154.7 -160.9 -166.3 -171.4 -176.0 179.6 175.6 171.6 167.7 164.1
S12 ANG
162.3 145.7 130.9 117.7 106.3 95.9 86.5 78.2 70.2 62.8 55.5 48.7 42.5 36.4 29.7 25.1 18.1 12.7 7.5 1.2
S22 ANG
76.7 65.4 55.1 46.0 38.6 32.5 27.4 23.2 18.6 15.1 12.0 9.1 5.9 2.6 2.1 -.2 -3.1 -3.6 -6.6 -10.1
MAG
4.538 4.260 3.890 3.493 3.132 2.814 2.525 2.294 2.095 1.931 1.782 1.646 1.536 1.442 1.343 1.269 1.215 1.137 1.087 1.042
MAG
.013 .025 .035 .042 .048 .052 .054 .057 .060 .061 .063 .064 .065 .065 .065 .068 .066 .069 .071 .070
MAG
.837 .820 .801 .782 .764 .751 .740 .733 .726 .720 .716 .710 .704 .702 .699 .699 .697 .695 .694 .691
ANG
-6.1 -11.9 -16.9 -21.6 -25.9 -29.9 -33.8 -37.8 -41.7 -45.7 -49.7 -53.6 -57.6 -61.4 -65.4 -69.5 -73.4 -77.7 -81.8 -85.4
NOTE:* The data includes bonding wires.
n: number of wires Gate n=1 (0.1mm length, 25µm Dia Au wire) Drain n=1 (0.1mm length, 25µm Dia Au wire) Source n=4 (0.2mm length, 25µm Dia Au wire)
Download S-Parameters, click here
3
|
|
