|
Details, datasheet, quote on part number:FSX027WF
| |
Datasheet text preview:
FSX027WF
General Purpose GaAs FET FEATURES
· · · · Medium Power Output: P1dB=24.5dBm(Typ.)@8.0GHz High Power Gain: G1dB=10dB(Typ.)@8.0GHz Hermetic Metal/Ceramic Package Proven Reliability
DESCRIPTION
The FSX027WF is a general purpose GaAs FET designed for medium power applications up to the 12GHz. These devices have a wide dynamic range and are suitable for use in medium power, wide band, linear drive amplifiers or oscillators. Fujitsu's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta = 25°C)
Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT TSTG TCH Tc = 25°C Condition Rating 12 -5 1.5 -65 to 175 175 Unit V V W °C °C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 8 volts. 2. The forward and reverse gate currents should not exceed 1.4 and -0.2 mA respectively with gate resistance of 1000. 3. The operating channel temperature (Tch) should not exceed 145°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Noise Figure Associated Gain Symbol IDSS gm Vp VGSO NF Gas P1dB VDS = 3V, IDS = 30mA f = 8GHz Test Conditions VDS = 3V, VGS = 0V VDS = 3V, IDS = 54mA VDS = 3V, IDS = 5.4mA IGS = -5.4µA Min. 70 -0.7 -5.0 Limit Typ. Max. 110 100 -1.2 2.5 9.5 24.5 24.5 23.5 14.0 10.0 6.5 70 150 -1.7 100 Unit mA mS V V dB dB dBm dBm dBm dB dB dB °C/W
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P. Thermal Resistance CASE STYLE: WF
G1dB Rth
f = 4GHz VDS = 8V, f = 8GHz 23.5 IDS = 0.7IDSS f = 12GHz f = 4GHz VDS = 8V, f = 8GHz 9.0 IDS = 0.7IDSS f = 12GHz Channel to Case -
G.C.P.: Gain Compression Point
Edition 1.2 July 1999
1
FSX027WF
General Purpose GaAs FET
POWER DERATING CURVE
DRAIN CURRENT vs. DRAIN-SOURCE VOLTA
Total Power Dissipation (W)
1.5 1.2 0.9 0.6 0.3
140
Drain Current (mA)
120 100 80 60 40 20 2 4 6
VGS = 0V -0.2V -0.4V -0.6V -0.8V -1.0V -1.2V 8 10
0
50
100
150
200
Case Temperature (°C)
Drain-Source Voltage (V)
OUTPUT POWER vs. INPUT POWER
26 VDS = 8V
IDS = 0.5 IDSS
Pout
f=4GHz 8GHz 12GHz
P 1dB vs. VDS
f = 8GHz IDS = 0.7 IDSS
Output Power (dBm)
24 22 20 18 16 14 12 10 8
25
60
f=4GHz 8GHz
add
12GHz
30 20 10 0 -6 -4 -2 0 24 6 8 10 12 14 16 18 20
add (%)
50 40
P 1dB (dBm)
23 21 19 17 4 5 6 7 8
Input Power (dBm)
Drain-Source Voltage (V)
FSX027WF
General Purpose GaAs FET
+j50 +j25
15GHz
S11 S22 +j100
+90°
S21 S12
10 14 +j10 12 0 6 10 -j10 4 8 6 4
1GHz 50 100
2 12 14
250 15GHz 1GHz
+j250
1GHz
8
4 6 26 8 4 8 10 8 6 4 2 SCALE FOR |S21| 15GHz 1GHz 10 12 12 .04 14
1GHz
180°
0°
2
SCALE FOR |S12|
-j250
.08 .12 .16
14
15GHz
-j25
2 -j50
-j100
-90°
FREQUENCY (MHZ)
1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 12000 13000 14000 15000
S11 MAG
.942 .852 .782 .745 .710 .683 .656 .638 .618 .601 .592 .591 .600 .582 .499
ANG
-53.2 -91.2 -116.0 -135.8 -155.2 -176.8 -159.9 139.7 119.4 97.2 73.4 51.8 33.6 19.1 -0.7
S-PARAMETERS VDS =8V, IDS = 75mA S21 S12 MAG ANG MAG ANG
6.773 5.211 3.993 3.335 2.994 2.747 2.532 2.323 2.089 1.838 1.639 1.646 1.401 1.409 1.246 142.1 114.2 94.6 80.7 66.2 51.7 36.2 20.2 1.4 -14.7 -30.5 -48.3 -67.1 -82.1 -103.6 .021 .030 .033 .035 .037 .040 .048 .054 .057 .065 .078 .087 .093 .117 .139 62.8 47.6 43.1 41.5 44.2 41.3 38.2 26.4 17.1 3.9 -5.1 -28.1 -31.1 -38.7 -53.2
S22 MAG
.651 .628 .635 .651 .652 .642 .634 .638 .636 .642 .646 .647 .651 .668 .705
ANG
-25.8 -43.7 -56.5 -66.8 -73.6 -83.7 -97.6 -115.9 -134.5 -150.7 -168.5 172.6 155.2 139.4 121.8
Download S-Parameters, click here
3
|
|
