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Part: GLT4161L16-50TC
Category:
Memory
-> DRAM
-> EDO/FPM DRAM
Description:
Company: G-Link Technology Corporation
Datasheet: Download GLT4161L16-50TC datasheet File size : 150 kB
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Datasheet text preview:
G -LINK
GLT4161L16
1M X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
Oct 2002 (Rev.2.1)
Features : 1,048,576 words by 16 bits organization.
Fast access time and cycle time. Dual CAS Input. Low power dissipation. Read-Modify-Write, RAS -Only Refresh,
CAS -Before- RAS Refresh, Hidden
Description :
The GLT4161L16 is a 1,048,576 x 16 bit high-performance CMOS dynamic random access memory. The GLT4161L16 offers Fast Page mode and has both BYTE WRITE and WORD WRITE access cycles via two CAS pins. The GLT4161L16 has symmetric address and accepts 1024-cycle refresh in 16ms interval. All inputs are TTL compatible. Fast Page Mode operation allows random access up to 1024 x 16 bits within a page, with cycle times as short as 23ns.
Refresh. 1024 refresh cycles per 16ms. Available in 400 mil SOJ / TSOPII Packages. Single 3.3V±0.3V Power Supply. Inputs and Outputs are TTL compatible. Fast Page Mode operation. Self refresh capability (S-Version)
HIGH PERFORMANCE Max. RAS Access Time, (tRAC) Max. Column Address Access Time, (tCAA) Min. Extended Data Out Page Mode Cycle Time, (tPC) Min. Read/Write Cycle Time, (tRC) Max. CAS Access Time (tCAC)
40 40 ns 20 ns 23 ns 75 ns 12 ns
45 45 ns 22 ns 25 ns 80 ns 12 ns
50 50 ns 25 ns 28 ns
70 70 ns 35 ns 30 ns
90 ns 124 ns 15 ns 20 ns
G-Link Technology Corporation
1759 S. Main St., Suite 128 Milpitas, CA 95035 U.S.A.
G-Link Technology Corporation,Taiwan
6F, NO. 24-2, INDUSTRY E RD. IV, SCIENCE-BASED INDUSTRIAL PARK, HSINCHU, TAIWAN, R. O. C.
-1-
G -LINK
Pin Configuration :
SOJ Top View
V cc DQ0 DQ1 DQ2 DQ3 V cc DQ4 DQ5 DQ6 DQ7 NC NC WE RAS NC NC A0 A1 A2 A3 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 VSS DQ 15 DQ 14 DQ 13 DQ 12 VSS DQ 11 DQ 10 DQ 9 DQ 8 NC LCAS UCAS OE A9 A8 A7 A6 A5 A4 VSS
Vcc DQ0 DQ1 DQ2 DQ3 Vcc DQ4 DQ5 DQ6 DQ7 NC NC NC WE RAS NC NC A0 A1 A2 A3 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
GLT4161L16
1M X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
Oct 2002 (Rev.2.1)
TSOP(Type II) Top View
44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 VSS DQ15 DQ14 DQ13 DQ12 VSS DQ11 DQ10 DQ9 DQ8 NC NC LCAS UCAS OE A9 A8 A7 A6 A5 A4 VSS
Pin Descriptions: Name A0 - A9
RAS UCAS LCAS WE OE
Function Address Inputs Row Address Strobe Column Address Strobe/Upper Byte Control Column Address Strobe/Lower Byte Control Write Enable Output Enable Data Inputs / Outputs +3.3V Power Supply Ground No Connection
DQ0 - DQ15 VCC VSS NC
G-Link Technology Corporation
1759 S. Main St., Suite 128 Milpitas, CA 95035 U.S.A.
G-Link Technology Corporation,Taiwan
6F, NO. 24-2, INDUSTRY E RD. IV, SCIENCE-BASED INDUSTRIAL PARK, HSINCHU, TAIWAN, R. O. C.
-2-
G -LINK
Absolute Maximum Ratings* Operating Temperature, TA (ambient)
.......0°C to +70°C Storage Temperature(plastic)....-55°C to +150°C Voltage Relative to VSS......-1.0V to + 4.6V Short Circuit Output Current....50mA Power Dissipation.....1.0W
*Note:Operation above Absolute Maximum Ratings can abversely affect device reliability.
GLT4161L16
1M X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
Oct 2002 (Rev.2.1)
Capacitance*
TA=25°C, VCC=3.3V±0.3V, VSS=0V Symbol CIN1 CIN2 COUT P a rameter Address Input
RAS , LCAS , UCAS , WE , OE
Max. Unit 5 7 7 pF pF pF
Data Input/Output
*Note: Capacitance is sampled and not 100% tested
Electrical Specifications
l l l
CAS means UCAS and LCAS . All voltages are referenced to GND.
After power up, wait more than 100µs and then, execute eight CAS -before- RAS or RAS -only refresh cycles as dummy cycles to initialize internal circuit.
Block Diagram :
RAS LCAS UCAS WE Clock Generator Upper Byte Control Lower Byte Control
X8
OE Data Output Buffer
X8
DQ0 | DQ7 Row Decoder CAS before RAS Counter Memory Array 1024X1024X16
X8
Vcc GND
Data Input Buffer
...1024...
X8
...1024X16...
X8
Data Output Buffer
X8
Sense Amplifier Row Address Buffer Column Address Buffer
Y0..Y9
X1 6
DQ8 | DQ15 Data Input Buffer
A0 | A9
X0..X9
....1024....
X8 X8
Column Decoder
G-Link Technology Corporation
1759 S. Main St., Suite 128 Milpitas, CA 95035 U.S.A.
G-Link Technology Corporation,Taiwan
6F, NO. 24-2, INDUSTRY E RD. IV, SCIENCE-BASED INDUSTRIAL PARK, HSINCHU, TAIWAN, R. O. C.
-3-
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