|
|
Part: GLT44016-30J4
Category:
Memory
-> DRAM
-> EDO/FPM DRAM
Description: 30ns; 256k X 16 CMOS Dynamic RAM With Extended Data Output
Company: G-Link Technology Corporation
Datasheet: Download GLT44016-30J4 datasheet File size : 150 kB
Request For quote: Find where to buy GLT44016-30J4
Datasheet text preview:
G -LINK
GLT44016
256K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
Aug, 2000(Rev.3.1)
Features :
262,144 words by 16 bits organization. Fast access time and cycle time. Dual CAS Input. Low power dissipation. Read-Modify-Write, RAS -Only Refresh,
CAS -Before- RAS Refresh, Hidden
Description :
The GLT44016 is a 262,144 x 16 bit high-performance CMOS dynamic random access memory. The GLT44016 offers Fast Page mode with Extended Data Output, and has both BYTE WRITE and WORD WRITE access cycles via two CAS pins. The GLT44016 has symmetric address and accepts 512-cycle refresh in 8ms interval. All inputs are TTL compatible. EDO Page Mode operation allows random access up to 512 x 16 bits within a page, with cycle times as short as 10ns. The GLT44016 is best suited for graphics, and DSP applications requiring high performance memories.
Refresh and Test Mode Capability. 512 refresh cycles per 8ms. Available in 40-Pin 400 mil SOJ and 40/44 Pin TSOP(II) Single 5.0V±10% Power Supply. All inputs and Outputs are TTL compatible. Extended Data-Out(EDO) Page Mode operation.
HIGH PERFORMANCE Max. RAS Access Time, (tRAC) Max. Column Address Access Time, (tCAA) Min. Extended Data Out Page Mode Cycle Time, (tPC) Min. Read/Write Cycle Time, (tRC) Max. CAS Access Time (tCAC)
25
28
30
35
40
50
25 ns 28 ns 30 ns 35 ns 40 ns 50 ns 13 ns 13 ns 16 ns 18 ns 20 ns 25 ns 10 ns 10 ns 12 ns 13 ns 15 ns 20 ns 45 ns 45 ns 60 ns 65 ns 70 ns 85 ns 8 ns 8 ns 10 ns 11 ns 12 ns 14 ns
G-Link Technology Corporation
2701Northwestern Parkway Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation,Taiwan
6F, No. 24-2, Industry E. RD. IV, Science Based Industrial Park, Hsin Chu, Taiwan.
-1-
G -LINK
GLT44016
256K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
Aug, 2000(Rev.3.1)
Pin Configuration : GLT44016 SOJ Top View TSOP(Type II) Top View
Pin Descriptions: Name A0 - A8
RAS UCAS LCAS WE OE
Function Address Inputs Row Address Strobe Column Address Strobe/Upper Byte Control Column Address Strobe/Lower Byte Control Write Enable Output Enable Data Inputs / Outputs +5V Power Supply Ground No Connection
DQ1 - DQ16 VCC VSS NC
G-Link Technology Corporation
2701Northwestern Parkway Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation,Taiwan
6F, No. 24-2, Industry E. RD. IV, Science Based Industrial Park, Hsin Chu, Taiwan.
-2-
G -LINK
Absolute Maximum Ratings* Operating Temperature, TA (ambient)
......-0°C to +70°C Storage Temperature(plastic)....-55°C to +150°C Voltage Relative to VSS......-1.0V to + 7.0V Short Circuit Output Current....50mA Power Dissipation.....1.0W
*Note:Operation above Absolute Maximum Ratings can abversely affect device reliability.
GLT44016
256K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
Aug, 2000(Rev.3.1)
Capacitance*
TA=25°C, VCC=5V±10%, VSS=0V Symbol CIN1 CIN2 COUT P a rameter Address Input
RAS , LCAS , UCAS , WE , OE
Max. Unit 5 7 7 pF pF pF
Data Input/Output
*Note: Capacitance is sampled and not 100% tested
Electrical Specifications
l l l
CAS means UCAS and LCAS . All voltages are referenced to GND.
After power up, wait more than 100µs and then, execute eight CAS -before- RAS or RAS -only refresh cycles as dummy cycles to initialize internal circuit.
Block Diagram :
OE WE UCAS LCAS RAS
R A S CLOCK GENERATOR
C A S CLOCK GENERATOR
W E CLOCK GENERATOR
O E CLOCK GENERATOR
V CC V SS
D a t a I/O BUS C O L U M N DECODERS REFRESH COUNTER
Y 0 - Y8 9 A0 A1 A7 A8 5 1 2 × 16
S E N S E AMPLIFIERS
I/O BUFFER
. .
A D D R E S S BUFFERS A N D PREDECODERS
X 0 - x8
ROW DECODERS
512
MEMORY ARRAY
I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 I/O8 I/O9 I/O10 I/O11 I/O12 I/O13 I/O14 I/O15 I/O16
G-Link Technology Corporation
2701Northwestern Parkway Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation,Taiwan
6F, No. 24-2, Industry E. RD. IV, Science Based Industrial Park, Hsin Chu, Taiwan.
-3-
Others parts begin by gl
GL-1 GL-2 GL-3 GL-4 GL-5 GL-6 GL-7 GL-8 GL-9
|
|
|
