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Details, datasheet, quote on part number:1N4448
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| Part: | 1N4448 |
| Category: | Discrete => Diodes & Rectifiers => Switching Diodes => Small Signal |
| Description: | Small Signal Diodes |
| Company: | General Semiconductor |
| Datasheet: | Download 1N4448 datasheet File size : 134 kB |
| Request For quote: | Find where to buy 1N4448
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Datasheet text preview:
1N4448
Vishay Semiconductors
formerly General Semiconductor
Small-Signal Diode
Reverse Voltage 100V Forward Current 150mA
DO-204AH (DO-35 Glass)
Features
· Silicon Epitaxial Planar Diode · Fast switching diode. · This diode is also available in other case styles i n c l u d i n g the SOD-123 case with the type designation 1N4448W, the MiniMELF case with the type designation LL4448, and the SOT-23 case with the type designation IMBD4448.
Mechanical Data
Case: DO-35 Glass Case Weight: approx. 0.13g Packaging Codes/Options: F2/10K per Ammo tape (52mm tape), 50K/box F3/10K per 13" reel (52mm tape), 50K/box
Dimensions in inches and (millimeters)
Maximum Ratings and Thermal Characteristics (T
Parameter Reverse Voltage Peak Reverse Voltage Average Rectified Current Half Wave Rectification with Resistive Load at Tamb = 25°C and f 50Hz(1) Surge Forward Current at t < 1s and Tj = 25°C Power Dissipation at Tamb = 25°C
(1) (1)
A
= 25°C unless otherwise noted)
Symbol VR VRM IF(AV) IFSM Ptot RJA Tj TS
Limit 75 100 150 500 500 350 175 65 to +175
Unit V V mA mA mW °C/W °C °C
Thermal Resistance Junction to Ambient Air Junction Temperature Storage Temperature
Note: (1) Valid provided that leads at a distance of 8mm from case are kept at ambient temperature
Document Number 88108 13-May-02
www.vishay.com 1
1N4448
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics (T
Parameter Forward Voltage
J
= 25°C unless otherwise noted)
Symbol VF
Test Condition IF = 5mA IF = 10mA VR = 20V VR = 75V VR = 20V, TJ = 150°C IR = 100µA (pulsed) VF = VR = 0V IF = 10mA, IR = 1mA VR = 6V, RL = 100 f = 100MHz, VRF = 2V
Min 0.62 -- -- -- -- 100 -- -- 0.45
Typ -- -- -- -- -- -- -- -- --
Max .72 1 25 5 50 -- 4 4 --
Unit V nA µA µA V pF ns --
Leakage Current Reverse Breakdown Voltage Capacitance Reverse Recovery Time Rectification Efficiency
IR V(BR)R Ctot trr
Rectification Efficiency Measurement Circuit
www.vishay.com 2
Document Number 88108 13-May-02
1N4448
Vishay Semiconductors
formerly General Semiconductor
Ratings and Characteristic Curves (TA = 25°C unless otherwise noted)
Document Number 88108 13-May-02
www.vishay.com 3
1N4448
Vishay Semiconductors
formerly General Semiconductor
Ratings and Characteristic Curves (TA = 25°C unless otherwise noted)
www.vishay.com 4
Document Number 88108 13-May-02
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