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Details, datasheet, quote on part number:1N5618GP
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| Part: | 1N5618GP |
| Category: | Discrete => Diodes & Rectifiers => Glass Passivated |
| Description: | Glass Passivated Medium-switching Junction Rectifier |
| Company: | General Semiconductor |
| Datasheet: | Download 1N5618GP datasheet File size : 34 kB |
| Request For quote: | Find where to buy 1N5618GP
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Datasheet text preview:
1N5614GP thru 1N5622GP
Vishay Semiconductors
formerly General Semiconductor
Glass Passivated Medium-Switching Junction Rectifiers
0.034 (0.86) 0.028 (0.71) Dia.
DO-204AC (DO-15)
1.0 (25.4) min.
®
ted* teneatures Pa F
Reverse Voltage 200 to 1000V Forward Current 1.0A
0.300 (7.6) 0.230 (5.8)
· Epoxy has UL Flammability Classification 94V-0 · High temperature metallurgically bonded construction · 1.0 ampere operation at TA=55°C with no thermal runaway · Typical IR less than 0.1µA · Cavity-free, glass passivated junction · Capable of meeting environmental standards of MIL-S-19500 · High temperature soldering guaranteed: 350°C/10 seconds, 0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension
0.140 (3.6) 0.104 (2.6) Dia.
Mechanical Data
Case: JEDEC DO-204AC, molded plastic over glass body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.015 oz., 0.4 g
Ratings at 25°C ambient temperature unless otherwise specified.
1.0 (25.4) min.
Dimensions in inches and (millimeters)
* Glass-plastic encapsulation technique is covered by Patent No. 3,996,602 and brazed-lead assembly by Patent No. 3,930,306
Maximum Ratings & Thermal Characteristics
Parameter * Maximum repetitive peak reverse voltage Maximum RMS voltage * Maximum DC blocking voltage Maximum average forward rectified current 0.375" (9.5mm) lead length at TA = 55°C * Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Typical thermal resistance (1) * Operating junction temperature range * Storage temperature range VRRM VRMS VDC IF(AV) IFSM RJA TJ TSTG 200 140 200
Symbol 1N5614GP 1N5616GP 1N5618GP 1N5620GP 1N5622GP 400 280 400 600 420 600 1.0 50 45 65 to +175 65 to +175 800 560 800 1000 700 1000
Unit V V V A A °C/W °C °C
Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
* Minimum reverse breakdown voltage at 50µA * Maximum instantaneous forward voltage at 1.0A * Maximum DC reverse current at rated DC blocking voltage * Maximum reverse recovery time at IF = 0.5A, IR = 1.0A, Irr = 0.25A Maximum junction capacitance at 12V, 1MHz TA = 25°C TA = 100°C TA = 200°C
VBR VF IR
220
440
660 1.2 0.5 25 1500 2.0
880
1100
V V µA µs
trr CJ 45 35
25
20
15
pF
Notes: (1) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, P.C.B. mounted
*JEDEC registered values
Document Number 88520 11-Feb-02
www.vishay.com 1
1N5614GP thru 1N5622GP
Vishay Semiconductors
formerly General Semiconductor
Ratings and Characteristic Curves (TA = 25°C unless otherwise noted)
Average Forward Rectified Current (A)
Fig. 1 Forward Current Derating Curve
1.0 50
Fig. 2 Maximum Non-repetitive Peak Forward Surge Current
Peak Forward Surge Current (A)
TJ = TJ max. 8.3ms Single Half Sine-Wave (JEDEC method)
0.75
60 Hz Resistive or Inductive Load 0.375" (9.5mm) Lead length
40
30
0.5
20
0.25
10
0 25
0 50 75 100 125 150 175 1 10 100
Ambient Temperature (°C)
Number of Cycles at 60 Hz
Fig. 3 Typical Instantaneous Forward Characteristics
Instantaneous Reverse Current (µA) Instantaneous Forward Current (A)
10 10
Fig. 4 Typical Reverse Characteristics
TJ = 150°C 1 TJ = 25°C
TJ = 125°C
1
0.1 Pulse Width = 300µs 1% Duty Cycle 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0.1
TJ = 75°C
TJ = 25°C 0.01 0 20 40 60 80 100
Instantaneous Forward Voltage (V)
Rated Peak Reverse Voltage (%)
Fig. 5 Typical Junction Capacitance
30
Junction Capacitance (pF)
TJ = 25°C f = 1.0 MHz Vsig = 50m Vp-p 10
1 1 10 100
Reverse Voltage (V)
www.vishay.com 2 Document Number 88520 11-Feb-02
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