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Details, datasheet, quote on part number:1N5819
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| Part: | 1N5819 |
| Category: | Discrete => Diodes & Rectifiers => Schottky Barrier Rectifiers => <5 AMP |
| Description: | Shottky Barrier Rectifier |
| Company: | General Semiconductor |
| Datasheet: | Download 1N5819 datasheet File size : 30 kB |
| Request For quote: | Find where to buy 1N5819
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Datasheet text preview:
1N5817 thru 1N5819
Vishay Semiconductors
formerly General Semiconductor
Schottky Barrier Rectifiers
DO-204AL (DO-41)
Reverse Voltage 20 to 40V Forward Current 1.0A
Features
· Plastic package has Underwriters Laboratory Flammability Classification 94V-0 · Low power loss, high efficiency · For use in low voltage high frequency inverters, free wheeling, and polarity protection applications · Guardring for overvoltage protection
Glass MELF
1.0 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) DIA.
Cathode Mark
0.102 (2.6) 0.094 (2.4)
Mechanical Data
0.205 (5.2) 0.160 (4.1)
0.022 (0.55) 0.205 (5.2) 0.189 (4.8)
Use "M" Suffix if body is MELF Dimensions in inches and (millimeters)
0.034 (0.86) 0.028 (0.71) DIA. 1.0 (25.4) MIN.
Case: JEDEC DO-204AL molded plastic body or glass MELF body Terminals: Plated leads, solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals for MELF and 0.375" (9.5mm) lead length, 5lbs (2.3kg) tension for axials Polarity: Color band denotes cathode end (band is green on MELF) Weight: plastic body DO-41: 0.34g glass MELF: 0.25g
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
Parameter * Maximum repetitive peak reverse voltage Maximum RMS voltage * Maximum DC blocking voltage * Maximum non-repetitive peak reverse voltage * Maximum average forward rectified current 0.375" (9.5mm) lead length at TL=90°C * Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) at TL=70°C Typical thermal resistance junction-to-ambient (glass) (Note 2) junction-to-ambient (plastic) junction-to-lead (plastic) *Storage temperature range Symbol VRRM VRMS VDC VRSM IF(AV) IFSM RJA RJA RJL TJ, TSTG
(TA = 25°C unless otherwise noted)
1N5817 20 14 20 24
1N5818 30 21 30 36 1.0 25 130 50 15 65 to +125
1N5819 40 28 40 48
Unit V V V V A A
°C/W °C
Electrical Characteristics
Parameter
Symbol
(Note 1) (Note 1)
1N5817 0.450 0.750
1N5818 0.550 0.875 1.0 10 110
1N5819 0.600 0.900
Unit V V mA pF
* Maximum instantaneous forward voltage at 1.0 * Maximum instantaneous forward voltage at 3.1 * Maximum average reverse current at rated DC blocking voltage (Note 1)
VF VF IR CJ
TA = 25°C TA = 100°C
Typical junction capacitance at 4.0V, 1.0MHz
*JEDEC registered values Notes: (1) Pulse test: 300µs pulse width, 1% duty cycle (2) Thermal resistance from junction to lead vertical P.C.B. mounted, 0.375" (9.5mm) lead length with 1.5 x 1.5" (38 x 38mm) copper pads
Document Number 88525 4-Sep-02 www.vishay.com 1
1N5817 thru 1N5819
Vishay Semiconductors
formerly General Semiconductor
Ratings and Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
1.0
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
30
Peak Forward Surge Current (A)
Average Forward Current (A)
0.75
Resistive or Inductive Load 0.375" (9.5mm) Lead Length
25 20
0.5
15
10 5 0
0.25
0
0
20
40
60
80
100
120
140
1
10
100
Case Temperature (°C)
Number of Cycles at 60 HZ
Fig. 3 - Typical Instantaneous Forward Characteristics
50 TJ = 125°C Pulse Width = 300µs 1% Duty Cycle 1.0 TJ = 25°C 100
Fig. 4 - Typical Reverse Characteristics
Instantaneous Reverse Current (mA)
Instantaneous Forward Current (A)
10
10 TJ = 125°C 1.0
0.1
TJ = 75°C
0.1
0.01 TJ = 25°C 0.001 0 20 40 60 80 100
0.01 0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 - Typical Junction Capacitance
400 100
Fig. 6 - Typical Transient Thermal Impedance
Transient Thermal Impedance (°C/W)
Junction Capacitance (pF)
TJ = 25°C f = 1.0 MHZ Vsig = 50mVp-p
100
10
1
10 0.1
1
10
100
0.1 0.01
0.1
1
10
100
Reverse Voltage (V) www.vishay.com 2
t -- Pulse Duration (sec.) Document Number 88525 4-Sep-02
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