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Part: 2KBP005M
Category:
Discrete
-> Diodes & Rectifiers
-> General Purpose Diodes
Description: Glass Passivated Single-phase Bridge Rectifier
Company: General Semiconductor
Datasheet: Download 2KBP005M datasheet File size : 780 kB
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Datasheet text preview:
2KBP005M thru 2KBP10M, 3N253 thru 3N259
Vishay Semiconductors
formerly General Semiconductor
Glass Passivated Single-Phase Bridge Rectifier
Case Style KBPM
0.600 (15.24) 0.125 x 45o (3.2) 0.560 (14.22)
Reverse Voltage 50 to 1000 V Forward Current 2.0 A
Features
· Plastic package has Underwriters Laboratory Flammability Classification 94V-0 · This series is UL listed under Recognized Component Index, file number E54214 · Typical IR less than 0.1µA · High case dielectric strength · Ideal for printed circuit boards · High temperature soldering guaranteed: 260°C/10 seconds at 5 lbs. (2.3kg) tension
0.460 (11.68) 0.420 (10.67)
0.500 (12.70) 0.460 (11.68)
Dimensions in inches and (millimeters)
60 (15.2) MIN. 0.060 (1.52) 0.160 (4.1) 0.140 (3.6)
0.50 (12.7) Min.
Mechanical Data
Case: Molded plastic body over passivated junctions Terminals: Plated leads solderable per MIL-STD-750, Method 2026 Polarity: Polarity symbols marked on case Mounting Position: Any Weight: 0.06 oz., 1.7 g Packaging codes/options: 1/600 EA. per Bulk Tray Stack
Ratings at 25°C ambient temperature unless otherwise specified.
0.034 (0.86) 0.028 (0.76) DIA.
0.200 (5.08) 0.180 (4.57)
0.105 (2.67) 0.085 (2.16)
Polarity shown on front side of case: positive lead by beveled corner
Maximum Ratings & Thermal Characteristics
2KBP 005M Parameter * Maximum repetitive peak reverse voltage * Maximum RMS voltage * Maximum DC blocking voltage Maximum average forward output rectified current at TA=55°C * Peak forward surge current single half sine-wave superimposed on rated load (JEDEC Method) TJ=150°C Rating for fusing (t < 8.3ms) Typical thermal resistance per leg
(1)
2KBP 01M 3N254 100 70 100
2KBP 02M 3N255 200 140 200
2KBP 04M 400 280 400 2.0 60 15 30 11
2KBP 2KBP 06M 08M 600 420 600 800 560 800
2KBP 10M 1000 700 1000 V V V A A A sec °C/W °C
2
Symbols 3N253 VRRM VRMS VDC IF(AV) IFSM I2t RJA RJL 50 35 50
3N256 3N257 3N258 3N259 Units
* Operating junction and storage temperature range TJ, TSTG
-55 to +165
Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
* Maximum instantaneous forward voltage drop per leg at 3.14A * Maximum DC reverse current TA=25°C at rated DC blocking voltage per leg TA=125°C Typical junction capacitance per leg at 4.0V, 1MHZ
VF IR CJ
1.1 5.0 500 25
V µA pF
Notes: (1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with, 0.47 x 0.47" (12 x12mm) copper pads * JEDEC registered values
Document Number 88532 28-Feb-02
www.vishay.com 1
2KBP005M thru 2KBP10M, 3N253 thru 3N259
Vishay Semiconductors
formerly General Semiconductor
Ratings and Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 -- Derating Curve Output Rectified Current
2.0
60
Fig. 2 -- Maximum Non-Repetitive Peak Forward Surge Current Per Leg
TJ = 150°C Single Sine-Wave (JEDEC Method)
Average Forward Output Current (A)
Peak Forward Surge Current (A)
60 HZ Resistive or Inductive Load 1.5 P.C.B. Mounted with 0.47 x 0.47" (12 x 12mm) Copper Pads
50
40
1.0
30
20
0.5
Capacitive Load I(pk) 5.0 = 10 I(AV) (Per Leg) 20 40 60 80 100 120 140 160 170
10
1.0 Cycle
0 1 10 100
0 20
Ambient Temperature (°C)
Number of Cycles at 60 HZ
Fig. 3 -- Typical Forward Characteristics Per Leg
20 100
Fig. 4 -- Typical Reverse Leakage Characteristics Per Leg
Instantaneous Reverse Current (µA)
TJ = 125°C 10 TJ = 100°C
Instantaneous Forward Current (A)
10
1
1
0.1
TJ = 25°C Pulse Width = 300µs 1% Duty Cycle
0.1 TJ = 25°C 0.01 0 20 40 60 80 100
0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 -- Typical Junction Capacitance Per Leg
100 TJ = 25°C f = 1.0MHZ Vsig = 50mVp-p
Junction Capacitance (pF)
10
1 0.1
1
10
100
Reverse Voltage (V) www.vishay.com 2 Document Number 88532 28-Feb-02
Others parts begin by 2k
2K-1
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