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Details, datasheet, quote on part number:2N4124
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| Part: | 2N4124 |
| Category: | Discrete => Transistors => Bipolar => General Purpose => NPN => Amplifier |
| Description: | Small Signal Transistor (NPN) |
| Company: | General Semiconductor |
| Datasheet: | Download 2N4124 datasheet File size : 189 kB |
| Request For quote: | Find where to buy 2N4124
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Datasheet text preview:
2N4124
Vishay Semiconductors
formerly General Semiconductor
Small Signal Transistor (NPN)
TO-226AA (TO-92)
0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) 0.142 (3.6)
Features
· NPN Silicon Epitaxial Transistor for switching and amplifier applications. · Especially suitable for AF-driver and low-power output stages. · As complementary type, the PNP transistor 2N4126 is recommended.
Mechanical Data
Case: TO-92 Plastic Package Weight: approx. 0.18g Packaging Codes/Options: E6/Bulk 5K per container, 20K/box E7/4K per Ammo mag., 20K/box
max. 0.022 (0.55) 0.098 (2.5)
Dimensions in inches and (millimeters)
Bottom View
Maximum Ratings & Thermal Characteristics
Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Peak Collector Current Base Current Power Dissipation at Tamb = 25°C Thermal Resistance Junction to Ambient Air Junction Temperature Storage Temperature Range Symbol VCEO VCBO VEBO IC ICM IB Ptot RJA Tj TS
Ratings at 25°C ambient temperature unless otherwise specified.
Value 25 30 5 200 800 50 625 200
(1) (1)
Unit V V V mA mA mA mW °C/ W °C °C
150 65 to +150
Note: (1) Valid provided that leads at a distance of 2mm from case are kept at ambient temperature.
Document Number 88115 07-May-02
www.vishay.com 1
2N4124
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics (T
Parameter DC Current Gain Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector Saturation Voltage Base Saturation Voltage Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Gain-Bandwidth Product Collector-Base Capacitance
J
= 25°C unless otherwise noted)
Symbol hFE ICBO IEBO VCEsat VBEsat V(BR)CEO V(BR)CBO V(BR)EBO fT CCBO
Test Condition VCE = 1 V, IC = 2.0 mA VCE = 1 V, IC = 50 mA VCB = 20 V VEB = 3 V IC = 50 mA, IB = 5 mA IC = 50 mA, IB = 5 mA IC = 1 mA IC = 10 µA IE = 10 µA VCE = 5 V, IC = 10 mA f = 50 MHz VCB = 10 V, f = 1MHz
Min 120 -- -- -- -- -- 25 30 5 -- --
Typ -- 60 -- -- -- -- -- -- -- 200 12
Max 360 -- 50 50 0.3 0.95 -- -- -- -- --
Unit -- nA nA V V V V V MHz pF
Ratings and Characteristic Curves (T
A
= 25°C unless otherwise noted)
www.vishay.com 2
Document Number 88115 07-May-02
2N4124
Vishay Semiconductors
formerly General Semiconductor
Ratings and Characteristic Curves (TA = 25°C unless otherwise noted)
Document Number 88115 07-May-02
www.vishay.com 3
2N4124
Vishay Semiconductors
formerly General Semiconductor
Ratings and Characteristic Curves (TA = 25°C unless otherwise noted)
www.vishay.com 4
Document Number 88115 07-May-02
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