Features
· PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications.· As complementary type, the NPN transistor 2N4401 is recommended.· On special request, this transistor is also manufactured in the pin configuration TO-18.· This transistor is also available in the SOT-23 case with the type designation MMBT4403.
Case: TO-92 Plastic Package Weight: approx. 0.18g Packaging Codes/Options: 5K per container, 20K/box E7/4K per Ammo mag., 20K/box
Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Power Dissipation Power Dissipation = 25°C Derate above = 25°C Derate above 25°C Symbol VCEO VCBO VEBO IC Ptot RJA RJC Tj TS
Ratings at 25°C ambient temperature unless otherwise specified.
Thermal Resistance Junction to Ambient Air Thermal Resistance Junction to Case Junction Temperature Storage Temperature Range
Collector Cutoff Current Base Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Input Impedance Voltage Feedback Ratio Current Gain-Bandwidth Product Collector-Base Capacitance Emitter-Base Capacitance Small Signal Current Gain Output Admittance
Notes: (1) Pulse test: Pulse width 300µs - Duty cycle 2%
ICEV IBEV VCEsat VBEsat V(BR)CEO V(BR)CBO V(BR)EBO hie hre fT CCB CEB hfe hoe
Parameter Delay Time (see fig. 1) Rise Time (see fig. 1) Storage Time (see fig. 2) Fall Time (see fig. 2)
Test Condition = 15 mA, -IC = 150 mA, -VCC 30 V, -VEB = 15 mA, -IC = 150 mA, -VCC 30 V, -VEB = 15 mA, -IC = 150 mA, -VCC = 15 mA, -IC = 150 mA, -VCC 30 V
to 100µs Duty Cycle +4 V Scope rise time - 4ns *Total shunt capacitance of test jig, connectors and oscilloscope to 100µs Duty Cycle 20 ns
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