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Part: BAS16WS
Category:
Discrete
-> Diodes & Rectifiers
-> Switching Diodes
-> Small Signal
Description: Small-signal Diodes
Company: General Semiconductor
Datasheet: Download BAS16WS datasheet File size : 46 kB
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Datasheet text preview:
BAS16D, BAS16WS
New Product
Vishay Semiconductors
formerly General Semiconductor
Small-Signal Diodes
SOD-323 (BAS16WS)
.012 (0.3)
Cathode Band
.112 (2.85) .100 (2.55) .076 (1.95) .065 (1.65)
SOD-123 (BAS16D)
.022 (0.55)
Top View
Cathode Band
.152 (3.85) .140 (3.55) .112 (2.85) .100 (2.55)
Dimensions in inches and (millimeters)
.053 (1.35) max.
.006 (0.15) max.
.004 (0.1) max.
.067 (1.70) .055 (1.40)
.010 (0.25) min.
Mounting Pad Layout SOD-323
0.055 (1.40) 0.062 (1.60) 0.047 (1.20) 0.055 (1.40)
.010 (0.25) min.
Mounting Pad Layout SOD-123
0.094 (2.40) 0.055 (1.40)
Mechanical Data
Case: BAS16D = SOD-123 Plastic Case BAS16WS = SOD-323 Plastic Case Weight: BAS16D = approx. 0.01g BAS16WS = approx. 0.004g Marking Code: A6 Packaging Codes/Options: SOD-123: D3/10K per 13" reel (8mm tape), 30K/box D4/3K per 7" reel (8mm tape), 30K/box SOD-323: D5/10K per 13" reel (8mm tape), 30K/box D6/3K per 7" reel (8mm tape), 30K/box
(TA = 25°C unless otherwise noted)
Features
· Silicon Epitaxial Planar Diode · Fast switching diode · Also available in case SOT-23 with designation BAS16
Maximum Ratings and Thermal Characteristics
Parameter Reverse Voltage Peak Reverse Voltage Forward Current (continuous) Non-Repetitive Peak Forward Current at t = 1µs at t = 1ms at t = 1s Power Dissipation at Tamb = 25°C Maximum Junction Temperature Storage Temperature Range
Note: (1) Valid provided electrodes are kept at ambient temperature
Symbol VR VRM IF IFSM Ptot Tj TS
Value 75 100 250 2.0 1.0 0.5 350(1) 200(1) 150 65 to +150
(1)
Unit V V mA A mW °C °C
BAS16D BAS16WS
Document Number 88125 14-May-02
www.vishay.com 1
.006 (0.15) max.
Top View
.059 (1.5) .004 (0.1) max. .043 (1.1)
.049 (1.25) max.
BAS16D, BAS16WS
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics (T
Parameter Forward Voltage at IF = 1mA IF = 10mA IF = 50mA IF = 150mA Leakage Current at VR = 25V, TJ = 150°C at VR = 75V at VR = 75V, TJ = 150°C Capacitance at VR = 0; f = 1MHZ Reverse Recovery Time from IF = 10mA to IR = 10mA IR = 1mA, RL = 100 Thermal Resistance Junction to Ambient Air
J
= 25°C unless otherwise noted)
Symbol
Min
Typ
Max 715 855 1.00 1.25 30 1 50 2
Unit mV mV V V µA
VF
IR
Ctot
pF
trr BAS16D BAS16WS
6 375 (1) 650 (1)
ns °C/W °C/W
RJA
(1) Valid provided that electrodes are kept at ambient temperature
www.vishay.com 2
Document Number 88125 14-May-02
BAS16D, BAS16WS
Vishay Semiconductors
formerly General Semiconductor
Ratings and Characteristic Curves (TA = 25°C unless otherwise noted)
BAS16D
BAS16WS
Document Number 88125 14-May-02
www.vishay.com 3
BAS16D, BAS16WS
Vishay Semiconductors
formerly General Semiconductor
Ratings and Characteristic Curves (TA = 25°C unless otherwise noted)
www.vishay.com 4
Document Number 88125 14-May-02
Others parts begin by ba
BA-1 BA-2 BA-3 BA-4 BA-5 BA-6 BA-7 BA-8 BA-9 BA-10 BA-11 BA-12 BA-13 BA-14 BA-15 BA-16 BA-17 BA-18
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