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Part: BAT54AthruBAT54S
Category:
Discrete
-> Diodes & Rectifiers
-> Schottky Diodes
Description:
Company: General Semiconductor
Datasheet: Download BAT54AthruBAT54S datasheet File size : 38 kB
Request For quote: Find where to buy BAT54AthruBAT54S
Datasheet text preview:
BAT54 thru BAT54S
Vishay Semiconductor
Schottky Diodes
TO-236AB (SOT-23)
.122 (3.1) .110 (2.8) .016 (0.4) 3 .056 (1.43) .052 (1.33)
Features
· These diodes feature very low turn-on voltage and fast switching. · These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
Top View
Mechanical Data
Case: SOT-23 Plastic Package Weight: approx. 0.008g Packaging Codes/Options: E8/10K per 13" reel (8mm tape), 30K/box E9/3K per 7" reel (8mm tape), 30K/box
1
2 max. .004 (0.1)
.007 (0.175) .005 (0.125)
.037(0.95) .037(0.95)
.016 (0.4)
.016 (0.4)
.102 (2.6) .094 (2.4)
Dimensions in inches and (millimeters)
.045 (1.15) .037 (0.95)
Mounting Pad Layout
BAT54A
Marking: L42
BAT54
Marking: L4 Top View
0.031 (0.8)
0.035 (0.9)
BAT54C
Marking: L43 Top View
BAT54S
Marking: L44
0.079 (2.0)
0.037 (0.95)
0.037 (0.95)
Maximum Ratings and Thermal Characteristics
Parameter Repetitive Peak Reverse Voltage Forward Continuous Current at Tamb = 25°C Repetitive Peak Forward Current at Tamb = 25°C Surge Forward Current at tp < 1 s, Tamb = 25°C Power Dissipation at Tamb = 25°C Thermal Resistance Junction to Ambiant Air Junction Temperature Storage Temperature Range
Note: (1) Device on fiberglass substrate, see layout on next page.
(TA = 25°C unless otherwise noted)
Symbol VRRM IF IFRM IFSM Ptot RJA Tj TS
Value 30 200 300 600
(1) (1) (1)
Unit V mA mA mA mW °C/W °C °C
230 430
(1)
125 65 to +150
Document Number 88142 03-Jan-02
www.vishay.com 1
BAT54 thru BAT54S
Vishay Semiconductor Electrical Characteristics (T
Parameter Reverse Breakdown Voltage Leakage Current
J
= 25°C unless otherwise noted)
Symbol V(BR)R IR
Test Condition 100µA pulses Pulse Test tp < 300µs < 2% at VR = 25V Pulse Test tp < 300µs, < 2% IF = 0.1mA IF = 1mA IF = 10mA IF = 30mA IF = 100mA VF = 1V f = 1MHz IF = 10mA, IR = 10mA Irr = 1mA, RL = 100
Min 30 --
Typ -- --
Max -- 2
Unit V µA
Forward Voltage
VF
-- -- -- -- -- -- --
-- -- -- -- -- -- --
240 320 400 500 1000 10 5
mV mV mV mV mV pF ns
Capacitance Reverse Recovery Time
Note: (1) Device on fiberglass substrate, see layout.
Ctot trr
Layout for RJA test
Thickness: Fiberglass 0.059 in. (1.5 mm) Copper leads 0.012 in. (0.3 mm)
0.30 (7.5) 0.12 (3)
.04 (1)
.08 (2) .04 (1) .08 (2)
0.59 (15) 0.47 (12)
0.03 (0.8)
0.2 (5)
0.06 (1.5) 0.20 (5.1)
Dimensions in inches (millimeters)
www.vishay.com 2
Document Number 88142 03-Jan-02
BAT54 thru BAT54S
Vishay Semiconductor Ratings and Characteristic Curves
Typical Forward Voltage Forward Current at Various Temperatures
1000 1000
Typical Variation of Reverse Current at Various Temperatures
100
TJ = 125°C
100
TJ = 125°C
IF in mA
10
TJ = -40°C
IR in µA
TJ = 100°C
10
TJ = 75°C
1
TJ = 25°C
1
TJ = 50°C
0.1
0.1
TJ = 25°C
0.01 0 0.2 0.4 0.6 0.8 VF in V 1.0 1.2 1.4
0.01 0 5 10 15 20 VR in V 25 30
Typical Capacitance °C vs. Reverse Applied Voltage VR
14 12 10 8 6 4
Cin pF
2
0 0 4 8 12 16 VR in V 20 24 28
Document Number 88142 03-Jan-02
www.vishay.com 3
Others parts begin by ba
BA-1 BA-2 BA-3 BA-4 BA-5 BA-6 BA-7 BA-8 BA-9 BA-10 BA-11 BA-12 BA-13 BA-14 BA-15 BA-16 BA-17 BA-18
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